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Yoshihara, K., Moon, D. W., Fujita, D., Kim, K. J., Kajiwara, K. (1993) GaAs/AlAs superlattice as a proposed new reference material for sputter depth profiling. Surface and Interface Analysis, 20 (13). 1061-1066 doi:10.1002/sia.740201306

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Reference TypeJournal (article/letter/editorial)
TitleGaAs/AlAs superlattice as a proposed new reference material for sputter depth profiling
JournalSurface and Interface Analysis
AuthorsYoshihara, K.Author
Moon, D. W.Author
Fujita, D.Author
Kim, K. J.Author
Kajiwara, K.Author
Year1993 (December)Volume20
Issue13
PublisherWiley
DOIdoi:10.1002/sia.740201306Search in ResearchGate
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Mindat Ref. ID6504087Long-form Identifiermindat:1:5:6504087:0
GUID0
Full ReferenceYoshihara, K., Moon, D. W., Fujita, D., Kim, K. J., Kajiwara, K. (1993) GaAs/AlAs superlattice as a proposed new reference material for sputter depth profiling. Surface and Interface Analysis, 20 (13). 1061-1066 doi:10.1002/sia.740201306
Plain TextYoshihara, K., Moon, D. W., Fujita, D., Kim, K. J., Kajiwara, K. (1993) GaAs/AlAs superlattice as a proposed new reference material for sputter depth profiling. Surface and Interface Analysis, 20 (13). 1061-1066 doi:10.1002/sia.740201306
In(1993, December) Surface and Interface Analysis Vol. 20 (13) Wiley

See Also

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Kim, K. J., Moon, D. W., Nam, S. H., Lee, W. J., Kim, H. G. (1995) XPS sputter depth profiling of the chemical states for SrTiO3/Si interface by O2+ ion beams. Surface and Interface Analysis, 23 (13). 851-857 doi:10.1002/sia.740231302
Kajiwara, K. (2002) Summary of ISO/TC 201 Standard: IV ISO 14606:2000?Surface chemical analysis?Sputter depth profiling?Optimization using layered systems as reference materials. Surface and Interface Analysis, 33 (4). 365-366 doi:10.1002/sia.1192
Rar, A, Hofmann, S, Yoshihara, K, Kajiwara, K (1999) Optimization of depth resolution parameters in AES sputter profiling of GaAs/AlAs multilayer structures. Applied Surface Science, 144. 310-314 doi:10.1016/s0169-4332(98)00821-6
Fujita, D., Tanaka, A., Goto, K., Homma, T. (1990) NiCo alloy as a new reference material for quantitative surface analysis. Surface and Interface Analysis, 16 (1). 183-187 doi:10.1002/sia.740160136
Kim, K. J., Moon, D. W., Chi, P., Simons, D. (2005) Development of B-doped Si multiple delta-layer reference materials for SIMS profiling. Surface and Interface Analysis, 37 (10). 802-808 doi:10.1002/sia.2080
Lee, J. W., Kim, K. J., Kim, H. K., Moon, D. W. (2005) Deconvolution of SIMS depth profiles of As multiple delta layers in silicon. Surface and Interface Analysis, 37 (2). 176-180 doi:10.1002/sia.1958
Hofmann, Siegfried (1994) Atomic mixing, surface roughness and information depth in high-resolution AES depth profiling of a GaAs/AlAs superlattice structure. Surface and Interface Analysis, 21 (9). 673-678 doi:10.1002/sia.740210912
Kajiwara, K. (1994) Crystalline effects on depth resolution in AES depth profiling. Surface and Interface Analysis, 22 (1). 22-26 doi:10.1002/sia.740220108
Bungo, T., Nagatomi, T., Takai, Y. (2006) Dependence of depth resolution on primary energy of low-energy Ar+ Ions (100–1000 eV) in AES sputter depth profiling of GaAs/AlAs superlattice. Surface and Interface Analysis, 38 (12). 1598-1603 doi:10.1002/sia.2414
Mizuhara, Y., Bungo, T., Nagatomi, T., Takai, Y. (2005) Preferential sputtering observed in Auger electron spectroscopy sputter depth profiling of AlAs/GaAs superlattice using low-energy ions. Surface and Interface Analysis, 37 (3). 343-347 doi:10.1002/sia.2027
Hashiguchi, Y., Mizuno, K., Nagoshi, M., Kasamura, H., Shiozawa, K., Fujita, D., Yoshihara, K. (1993) Surface analytical study of the cause of mass gain of the kilogram prototype. Surface and Interface Analysis, 20 (4). 276-282 doi:10.1002/sia.740200403
 
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