Halliop, B., Salaun, M.F., Favre, W., Varache, R., Gueunier-Farret, M.E., Kleider, J.P., Kherani, N.P. (2012) Interface properties of amorphous-crystalline silicon heterojunctions prepared using DC saddle-field PECVD. Journal of Non-Crystalline Solids, 358 (17) 2227-2231 doi:10.1016/j.jnoncrysol.2012.01.048

See Also

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	Maslova, O.A., Gueunier-Farret, M.E., Alvarez, J., Gudovskikh, A.S., Terukov, E.I., Kleider, J.P. (2012) Space charge capacitance spectroscopy in amorphous silicon Schottky diodes: Theory, modeling, and experiments. Journal of Non-Crystalline Solids, 358 (17) 2007-2010 doi:10.1016/j.jnoncrysol.2012.01.053
	Gueunier-Farret, M.E., Kleider, J.P., Voigt, F., Brüggemann, R., Bauer, G.H., Huisken, F., Ledoux, G. (2006) Transport properties and defects in silicon nanoparticles and effect of embedding in amorphous silicon layers. Journal of Non-Crystalline Solids, 352 (9) 1101-1104 doi:10.1016/j.jnoncrysol.2005.11.096
	Brüggemann, R., Brehme, S., Kleider, J.P., Gueunier, M.E., Bronner, W. (2004) Effects of proton irradiation on the photoelectronic properties of microcrystalline silicon. Journal of Non-Crystalline Solids, 338. 477-480 doi:10.1016/j.jnoncrysol.2004.03.023
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	Kleider, J.P., Longeaud, C., Gueunier, M.E. (2004) Investigation of bandgap states using the modulated photocurrent technique in both high and low frequency regimes. Journal of Non-Crystalline Solids, 338. 390-399 doi:10.1016/j.jnoncrysol.2004.03.005
	Maslova, O., Brézard-Oudot, A., Gueunier-Farret, M. E., Alvarez, J., Favre, W., Muñoz, D., Kleider, J. P. (2013) Understanding inversion layers and band discontinuities in hydrogenated amorphous silicon/crystalline silicon heterojunctions from the temperature dependence of the capacitance. Applied Physics Letters, 103 (18). 183907pp. doi:10.1063/1.4826920
	Kleider, J.P., Soro, Y.M., Chouffot, R., Gudovskikh, A.S., Roca i Cabarrocas, P., Damon-Lacoste, J., Eon, D., Ribeyron, P.-J. (2008) High interfacial conductivity at amorphous silicon/crystalline silicon heterojunctions. Journal of Non-Crystalline Solids, 354 (19) 2641-2645 doi:10.1016/j.jnoncrysol.2007.09.087
	Kleider, Jean‐Paul, Alvarez, José, Brüggemann, Rudolf, Gueunier‐Farret, Marie‐Estelle (2019) Recent Progress in Understanding the Properties of the Amorphous Silicon/Crystalline Silicon Interface. physica status solidi (a), 216 (13). 1800877pp. doi:10.1002/pssa.201800877
	Maslova, O., Brézard-Oudot, A., Gueunier-Farret, M.E., Alvarez, J., Favre, W., Muñoz, D., Gudovskikh, A.S., Kleider, J.-P. (2014) Temperature and bias dependence of hydrogenated amorphous silicon – crystalline silicon heterojunction capacitance: the link to band bending and band offsets. Canadian Journal of Physics, 92. 690-695 doi:10.1139/cjp-2013-0544
	Boutchich, Mohamed, Alvarez, José, Diouf, Djicknoum, Roca i Cabarrocas, Pere, Liao, Meiyong, Masataka, Imura, Koide, Yasuo, Kleider, Jean-Paul (2012) Amorphous silicon diamond based heterojunctions with high rectification ratio. Journal of Non-Crystalline Solids, 358 (17) 2110-2113 doi:10.1016/j.jnoncrysol.2011.12.067