Gueunier-Farret, M.E., Kleider, J.P., Voigt, F., Brüggemann, R., Bauer, G.H., Huisken, F., Ledoux, G. (2006) Transport properties and defects in silicon nanoparticles and effect of embedding in amorphous silicon layers. Journal of Non-Crystalline Solids, 352 (9) 1101-1104 doi:10.1016/j.jnoncrysol.2005.11.096

See Also

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	Halliop, B., Salaun, M.F., Favre, W., Varache, R., Gueunier-Farret, M.E., Kleider, J.P., Kherani, N.P. (2012) Interface properties of amorphous-crystalline silicon heterojunctions prepared using DC saddle-field PECVD. Journal of Non-Crystalline Solids, 358 (17) 2227-2231 doi:10.1016/j.jnoncrysol.2012.01.048
	Brüggemann, R., Brehme, S., Kleider, J.P., Gueunier, M.E., Bronner, W. (2004) Effects of proton irradiation on the photoelectronic properties of microcrystalline silicon. Journal of Non-Crystalline Solids, 338. 477-480 doi:10.1016/j.jnoncrysol.2004.03.023
	Maslova, O.A., Gueunier-Farret, M.E., Alvarez, J., Gudovskikh, A.S., Terukov, E.I., Kleider, J.P. (2012) Space charge capacitance spectroscopy in amorphous silicon Schottky diodes: Theory, modeling, and experiments. Journal of Non-Crystalline Solids, 358 (17) 2007-2010 doi:10.1016/j.jnoncrysol.2012.01.053
	Souffi, N., Bauer, G.H., Brüggemann, R. (2006) Density-of-states in microcrystalline silicon from thermally-stimulated conductivity. Journal of Non-Crystalline Solids, 352 (9) 1109-1112 doi:10.1016/j.jnoncrysol.2005.10.039
	Soro, Y.M., Abramov, A., Gueunier-Farret, M.E., Johnson, E.V., Longeaud, C., Roca i Cabarrocas, P., Kleider, J.P. (2008) Device grade hydrogenated polymorphous silicon deposited at high rates. Journal of Non-Crystalline Solids, 354 (19) 2092-2095 doi:10.1016/j.jnoncrysol.2007.10.047
	Brüggemann, R., Reynolds, S. (2006) Modulated photoluminescence studies for lifetime determination in amorphous-silicon passivated crystalline-silicon wafers. Journal of Non-Crystalline Solids, 352 (9) 1888-1891 doi:10.1016/j.jnoncrysol.2005.11.092
	Kleider, Jean‐Paul, Alvarez, José, Brüggemann, Rudolf, Gueunier‐Farret, Marie‐Estelle (2019) Recent Progress in Understanding the Properties of the Amorphous Silicon/Crystalline Silicon Interface. physica status solidi (a), 216 (13). 1800877pp. doi:10.1002/pssa.201800877
	Bronner, W, Kleider, J.P, Brüggemann, R, Roca i Cabarrocas, P, Mencaraglia, D, Mehring, M (2002) Comparison of transport and defects properties in hydrogenated polymorphous and amorphous silicon. Journal of Non-Crystalline Solids, 299. 551-555 doi:10.1016/s0022-3093(01)01201-7
	Brüggemann, R., Souffi, N. (2006) Metastable dark and photoconductive properties of microcrystalline silicon. Journal of Non-Crystalline Solids, 352 (9) 1079-1082 doi:10.1016/j.jnoncrysol.2005.11.089
	Kleider, J.P., Gudovskikh, A.S., Godet, C. (2006) DC and AC Hopping transport in metal/amorphous carbon nitride/metal devices. Journal of Non-Crystalline Solids, 352 (9) 1323-1326 doi:10.1016/j.jnoncrysol.2005.12.019
	Gueunier-Farret, M.E., Bazin, C., Kleider, J.P., Longeaud, C., Bulkin, P., Daineka, D., Dao, T.H., Roca i Cabarrocas, P., Descamps, P., Kervyn de Meerendre, T., Leempoel, P., Meaudre, M., Meaudre, R. (2006) Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates. Journal of Non-Crystalline Solids, 352 (9) 1913-1916 doi:10.1016/j.jnoncrysol.2006.01.080