Kessels, W.M.M., Hoefnagels, J.P.M., van den Oever, P.J., Barrell, Y., van de Sanden, M.C.M. (2003) Temperature dependence of the surface reactivity of SiH3 radicals and the surface silicon hydride composition during amorphous silicon growth. Surface Science, 547 (3). doi:10.1016/j.susc.2003.10.030

See Also

These are possibly similar items as determined by title/reference text matching only.

	Marra, D.C, Kessels, W.M.M, van de Sanden, M.C.M, Kashefizadeh, K, Aydil, E.S (2003) Surface hydride composition of plasma deposited hydrogenated amorphous silicon: in situ infrared study of ion flux and temperature dependence. Surface Science, 530 (1). 1-16 doi:10.1016/s0039-6028(03)00396-0
	Hoefnagels, J.P.M., Stevens, A.A.E., Boogaarts, M.G.H., Kessels, W.M.M., van de Sanden, M.C.M. (2002) Time-resolved cavity ring-down spectroscopic study of the gas phase and surface loss rates of Si and SiH3 plasma radicals. Chemical Physics Letters, 360. 189-193 doi:10.1016/s0009-2614(02)00802-3
	Kessels, W.M.M., van Assche, F.J.H., van den Oever, P.J., van de Sanden, M.C.M. (2004) The growth kinetics of silicon nitride deposited from the SiH4–N2 reactant mixture in a remote plasma. Journal of Non-Crystalline Solids, 338. 37-41 doi:10.1016/j.jnoncrysol.2004.02.017
	Kessels, W.M.M., Smets, A.H.M., van de Sanden, M.C.M. (2004) The a-Si:H growth mechanism and the role of H abstraction from the surface by SiH3 radicals via an Eley–Rideal mechanism. Journal of Non-Crystalline Solids, 338. 27-31 doi:10.1016/j.jnoncrysol.2004.02.015
	Agarwal, Sumit, Valipa, Mayur S., Hoex, Bram, van de Sanden, M.C.M., Maroudas, Dimitrios, Aydil, Eray S. (2005) Interaction of SiH3 radicals with deuterated (hydrogenated) amorphous silicon surfaces. Surface Science, 598 (1). 35-44 doi:10.1016/j.susc.2005.09.026
	Smets, A. H. M., Kessels, W. M. M., van de Sanden, M. C. M. (2003) Temperature dependence of the surface roughness evolution during hydrogenated amorphous silicon film growth. Applied Physics Letters, 82 (6). 865-867 doi:10.1063/1.1543237
	Hoefnagels, J. P. M., Barrell, Y., Kessels, W. M. M., van de Sanden, M. C. M. (2004) Time-resolved cavity ringdown study of the Si and SiH3 surface reaction probability during plasma deposition of a-Si:H at different substrate temperatures. Journal of Applied Physics, 96 (8). 4094-4106 doi:10.1063/1.1793359
	Leewis, C.M., Kessels, W.M.M., van de Sanden, M.C.M., Niemantsverdriet, J.W. (2007) On the H-exchange of ammonia and silica hydroxyls in the presence of Rh nanoparticles. Applied Surface Science, 253. 3600-3607 doi:10.1016/j.apsusc.2006.07.069
	Kessels, W.M.M., Houston, I.J., Nadir, K., van de Sanden, M.C.M. (2006) High-rate deposition of nanocrystalline silicon using the expanding thermal plasma technique. Journal of Non-Crystalline Solids, 352 (9) 915-918 doi:10.1016/j.jnoncrysol.2006.01.044
	van den Donker, M.N., Rech, B., Schmitz, R., Klomfass, J., Dingemans, G., Finger, F., Houben, L., Kessels, W.M.M., van de Sanden, M.C.M. (2007) Hidden parameters in the plasma deposition of microcrystalline silicon solar cells. Journal of Materials Research, 22 (7) 1767-1774 doi:10.1557/jmr.2007.0226
	Kessels, W.M.M, Severens, R.J, van de Sanden, M.C.M, Schram, D.C (1998) Temperature and growth-rate effects on the hydrogen incorporation in a-Si:H. Journal of Non-Crystalline Solids, 227. 133-137 doi:10.1016/s0022-3093(98)00028-3