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Kessels, W.M.M., Houston, I.J., Nadir, K., van de Sanden, M.C.M. (2006) High-rate deposition of nanocrystalline silicon using the expanding thermal plasma technique. Journal of Non-Crystalline Solids, 352 (9) 915-918 doi:10.1016/j.jnoncrysol.2006.01.044

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Reference TypeJournal (article/letter/editorial)
TitleHigh-rate deposition of nanocrystalline silicon using the expanding thermal plasma technique
JournalJournal of Non-Crystalline Solids
AuthorsKessels, W.M.M.Author
Houston, I.J.Author
Nadir, K.Author
van de Sanden, M.C.M.Author
Year2006 (June)Volume352
Issue9
PublisherElsevier BV
DOIdoi:10.1016/j.jnoncrysol.2006.01.044Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID644458Long-form Identifiermindat:1:5:644458:1
GUID0
Full ReferenceKessels, W.M.M., Houston, I.J., Nadir, K., van de Sanden, M.C.M. (2006) High-rate deposition of nanocrystalline silicon using the expanding thermal plasma technique. Journal of Non-Crystalline Solids, 352 (9) 915-918 doi:10.1016/j.jnoncrysol.2006.01.044
Plain TextKessels, W.M.M., Houston, I.J., Nadir, K., van de Sanden, M.C.M. (2006) High-rate deposition of nanocrystalline silicon using the expanding thermal plasma technique. Journal of Non-Crystalline Solids, 352 (9) 915-918 doi:10.1016/j.jnoncrysol.2006.01.044
In(2006, June) Journal of Non-Crystalline Solids Vol. 352 (9) Elsevier BV

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van Swaaij, R.A.C.M.M., Jiménez Zambrano, R., Smit, C., van de Sanden, M.C.M. (2006) New insights in microcrystalline silicon deposition with expanding thermal plasma chemical vapor deposition. Journal of Non-Crystalline Solids, 352 (9) 933-936 doi:10.1016/j.jnoncrysol.2005.11.109
Kessels, W.M.M., van Assche, F.J.H., van den Oever, P.J., van de Sanden, M.C.M. (2004) The growth kinetics of silicon nitride deposited from the SiH4–N2 reactant mixture in a remote plasma. Journal of Non-Crystalline Solids, 338. 37-41 doi:10.1016/j.jnoncrysol.2004.02.017
Brinza, M, Adriaenssens, G.J, Iakoubovskii, K, Stesmans, A, Kessels, W.M.M, Smets, A.H.M, van de Sanden, M.C.M (2002) Time-of-flight photocurrents in expanding-thermal-plasma-deposited a-Si:H. Journal of Non-Crystalline Solids, 299. 420-424 doi:10.1016/s0022-3093(01)01178-4
Aarts, I.M.P., van de Sanden, M.C.M., Kessels, W.M.M. (2004) Analysis of a-Si:H subgap absorption spectra obtained from absolute cavity ringdown absorption spectroscopy using an empirical DOS model. Journal of Non-Crystalline Solids, 338. 408-411 doi:10.1016/j.jnoncrysol.2004.03.100
Kessels, W. M. M., Nadir, K., van de Sanden, M. C. M. (2006) SiHx film growth precursors during high-rate nanocrystalline silicon deposition. Journal of Applied Physics, 99 (7). 76110pp. doi:10.1063/1.2188068
Kessels, W.M.M, Severens, R.J, van de Sanden, M.C.M, Schram, D.C (1998) Temperature and growth-rate effects on the hydrogen incorporation in a-Si:H. Journal of Non-Crystalline Solids, 227. 133-137 doi:10.1016/s0022-3093(98)00028-3
Smit, C, Hamers, E.A.G, Korevaar, B.A, van Swaaij, R.A.C.M.M, van de Sanden, M.C.M (2002) Fast deposition of microcrystalline silicon with an expanding thermal plasma. Journal of Non-Crystalline Solids, 299. 98-102 doi:10.1016/s0022-3093(01)01184-x
Kessels, W.M.M., Smets, A.H.M., van de Sanden, M.C.M. (2004) The a-Si:H growth mechanism and the role of H abstraction from the surface by SiH3 radicals via an Eley–Rideal mechanism. Journal of Non-Crystalline Solids, 338. 27-31 doi:10.1016/j.jnoncrysol.2004.02.015
Willekens, J., Brinza, M., Güngör, T., Adriaenssens, G.J., Nesládek, M., Kessels, W.M.M., Smets, A.H.M., van de Sanden, M.C.M. (2004) Optical spectroscopy of the density of gap states in ETP-deposited a-Si:H. Journal of Non-Crystalline Solids, 338. 244-248 doi:10.1016/j.jnoncrysol.2004.02.078
Bronneberg, A.C., de Sanden, M.C.M. van, Creatore, M. (2012) Remote plasma deposition of microcrystalline silicon thin-films: Film structure and the role of atomic hydrogen. Journal of Non-Crystalline Solids, 358 (2) 379-386 doi:10.1016/j.jnoncrysol.2011.10.005
Korevaar, B.A, Adriaenssens, G.J, Smets, A.H.M, Kessels, W.M.M, Song, H.-Z, van de Sanden, M.C.M, Schram, D.C (2000) High hole drift mobility in a-Si:H deposited at high growth rates for solar cell application. Journal of Non-Crystalline Solids, 266. 380-384 doi:10.1016/s0022-3093(99)00735-8
 
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