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Mukhopadhyay, Sumita, Chowdhury, Amartya, Ray, Swati (2006) Substrate temperature dependence of microcrystalline silicon growth by PECVD technique. Journal of Non-Crystalline Solids, 352 (9) 1045-1048 doi:10.1016/j.jnoncrysol.2005.11.095

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Reference TypeJournal (article/letter/editorial)
TitleSubstrate temperature dependence of microcrystalline silicon growth by PECVD technique
JournalJournal of Non-Crystalline Solids
AuthorsMukhopadhyay, SumitaAuthor
Chowdhury, AmartyaAuthor
Ray, SwatiAuthor
Year2006 (June)Volume352
Issue9
PublisherElsevier BV
DOIdoi:10.1016/j.jnoncrysol.2005.11.095Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID644341Long-form Identifiermindat:1:5:644341:6
GUID0
Full ReferenceMukhopadhyay, Sumita, Chowdhury, Amartya, Ray, Swati (2006) Substrate temperature dependence of microcrystalline silicon growth by PECVD technique. Journal of Non-Crystalline Solids, 352 (9) 1045-1048 doi:10.1016/j.jnoncrysol.2005.11.095
Plain TextMukhopadhyay, Sumita, Chowdhury, Amartya, Ray, Swati (2006) Substrate temperature dependence of microcrystalline silicon growth by PECVD technique. Journal of Non-Crystalline Solids, 352 (9) 1045-1048 doi:10.1016/j.jnoncrysol.2005.11.095
In(2006, June) Journal of Non-Crystalline Solids Vol. 352 (9) Elsevier BV

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Chowdhury, Amartya, Mukhopadhyay, Sumita, Ray, Swati (2007) Structural and transport properties of nanocrystalline silicon thin films prepared at 54.24MHz plasma excitation frequency. Journal of Crystal Growth, 304 (2). 352-360 doi:10.1016/j.jcrysgro.2007.02.041
Losurdo, M., Giangregorio, M.M., Sacchetti, A., Capezzuto, P., Bruno, G., Càrabe, J., Gandìa, J.J., Urbina, L. (2006) Dynamics of low temperature PECVD growth of microcrystalline silicon thin films: Impact of substrate surface treatments. Journal of Non-Crystalline Solids, 352 (9) 906-910 doi:10.1016/j.jnoncrysol.2005.09.039
Mukhopadhyay, Sumita, Das, Chandan, Ray, Swati (2004) Structural analysis of undoped microcrystalline silicon thin films deposited by PECVD technique. Journal of Physics D: Applied Physics, 37. 1736-1741 doi:10.1088/0022-3727/37/13/003
Gordijn, A., Hodakova, L., Rath, J.K., Schropp, R.E.I. (2006) Influence on cell performance of bulk defect density in microcrystalline silicon grown by VHF PECVD. Journal of Non-Crystalline Solids, 352 (9) 1868-1871 doi:10.1016/j.jnoncrysol.2005.12.042
Brüggemann, R., Souffi, N. (2006) Metastable dark and photoconductive properties of microcrystalline silicon. Journal of Non-Crystalline Solids, 352 (9) 1079-1082 doi:10.1016/j.jnoncrysol.2005.11.089
Mukhopadhyay, Sumita, Saha, Subhas Chandra, Ray, Swati (2001) Role of Substrate Temperature on the Properties of Microcrystalline Silicon Thin Films. Japanese Journal of Applied Physics, 40. 6284-6289 doi:10.1143/jjap.40.6284
Pecora, A., Maiolo, L., Fortunato, G., Caligiore, C. (2006) A comparative analysis of silicon dioxide films deposited by ECR-PECVD, TEOS-PECVD and Vapox-APCVD. Journal of Non-Crystalline Solids, 352 (9) 1430-1433 doi:10.1016/j.jnoncrysol.2005.10.030
Ali, Atif Mossad (2006) Mechanisms of the growth of nanocrystalline Si:H films deposited by PECVD. Journal of Non-Crystalline Solids, 352 (28) 3126-3133 doi:10.1016/j.jnoncrysol.2006.03.065
Matsui, T., Ogata, K., Isomura, M., Kondo, M. (2006) Microcrystalline silicon–germanium alloys for solar cell application: Growth and material properties. Journal of Non-Crystalline Solids, 352 (9) 1255-1258 doi:10.1016/j.jnoncrysol.2005.11.144
Ganguly, Gautam, De, S.C., Ray, Swati, Barua, A.K. (1989) PECVD of microcrystalline silicon carbon alloy thin films. Journal of Non-Crystalline Solids, 114. 822-824 doi:10.1016/0022-3093(89)90732-1
Kosku, Nihan, Miyazaki, Seiichi (2006) The application of very high frequency inductively coupled plasma to high-rate growth of microcrystalline silicon films. Journal of Non-Crystalline Solids, 352 (9) 911-914 doi:10.1016/j.jnoncrysol.2005.11.125
 
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