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Roca i Cabarrocas, Pere, Layadi, Nacer, Drevillon, Bernard, Solomon, Ionel (1996) Microcrystalline silicon growth by the layer-by-layer technique: long term evolution and nucleation mechanisms. Journal of Non-Crystalline Solids, 198. 871-874 doi:10.1016/0022-3093(96)00073-7

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Reference TypeJournal (article/letter/editorial)
TitleMicrocrystalline silicon growth by the layer-by-layer technique: long term evolution and nucleation mechanisms
JournalJournal of Non-Crystalline Solids
AuthorsRoca i Cabarrocas, PereAuthor
Layadi, NacerAuthor
Drevillon, BernardAuthor
Solomon, IonelAuthor
Year1996 (May)Volume198
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(96)00073-7Search in ResearchGate
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Mindat Ref. ID635557Long-form Identifiermindat:1:5:635557:3
GUID0
Full ReferenceRoca i Cabarrocas, Pere, Layadi, Nacer, Drevillon, Bernard, Solomon, Ionel (1996) Microcrystalline silicon growth by the layer-by-layer technique: long term evolution and nucleation mechanisms. Journal of Non-Crystalline Solids, 198. 871-874 doi:10.1016/0022-3093(96)00073-7
Plain TextRoca i Cabarrocas, Pere, Layadi, Nacer, Drevillon, Bernard, Solomon, Ionel (1996) Microcrystalline silicon growth by the layer-by-layer technique: long term evolution and nucleation mechanisms. Journal of Non-Crystalline Solids, 198. 871-874 doi:10.1016/0022-3093(96)00073-7
In(1996) Journal of Non-Crystalline Solids Vol. 198. Elsevier BV

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Kalache, B., Kosarev, A.I., Vanderhaghen, R., Roca i Cabarrocas, P. (2002) Ion bombardment effects on the microcrystalline silicon growth mechanisms and structure. Journal of Non-Crystalline Solids, 299. 63-67 doi:10.1016/s0022-3093(01)00995-4
Paillard, Vincent, Puech, Pascal, Roca i Cabarrocas, Pere (2002) Measurement of stress gradients in hydrogenated microcrystalline silicon thin films using Raman spectroscopy. Journal of Non-Crystalline Solids, 299. 280-283 doi:10.1016/s0022-3093(02)00936-5
Godet, Christian, Morin, Phil, Roca i Cabarrocas, Pere (1996) Influence of the dilute-phase SiH bond concentration on the steady-state defect density in a-Si:H. Journal of Non-Crystalline Solids, 198. 449-452 doi:10.1016/0022-3093(95)00727-x
Solomon, I., Drévillon, B., Shirai, H., Layadi, N. (1993) Plasma deposition of microcrystalline silicon: the selective etching model. Journal of Non-Crystalline Solids, 164. 989-992 doi:10.1016/0022-3093(93)91164-x
Shirai, Hajime, Arai, Takeshi (1996) Role of hydrogen in the growth of hydrogenated microcrystalline silicon. Journal of Non-Crystalline Solids, 198. 931-934 doi:10.1016/0022-3093(96)00089-0
Antoine, A.M, Drevillon, B, Roca, P, Cabarrocas, I (1985) Growth processes of RF glow discharge deposited a-Si:H and a-Ge:H films. Journal of Non-Crystalline Solids, 77. 769-772 doi:10.1016/0022-3093(85)90773-2
Cuniot, Mireille, Dixmier, Jean, Roca i Cabarrocas, Pere (1996) Improved mobility-lifetime product of holes in a-Si:H n-i-p devices: a consequence of structural relaxation?. Journal of Non-Crystalline Solids, 198. 540-543 doi:10.1016/0022-3093(95)00756-3
Shirai, H, Drévillon, B, Layadi, N, Roca i Cabarrocas, P (1993) In situ UV-visible and Infrared ellipsometry study of the influence of silane dilution on the growth of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 164. 119-122 doi:10.1016/0022-3093(93)90506-s
Vetterl, O, Hapke, P, Finger, F, Houben, L, Luysberg, M, Wagner, H (1998) Growth of microcrystalline silicon using the layer-by-layer technique at various plasma excitation frequencies. Journal of Non-Crystalline Solids, 227. 866-870 doi:10.1016/s0022-3093(98)00198-7
Layadi, N., Roca i Cabarrocas, P., Drévillon, B., Solomon, I. (1995) Real-time spectroscopic ellipsometry study of the growth of amorphous and microcrystalline silicon thin films prepared by alternating silicon deposition and hydrogen plasma treatment. Physical Review B, 52 (7) 5136-5143 doi:10.1103/physrevb.52.5136
Roca i Cabarrocas, P., Layadi, N., Heitz, T., Drévillon, B., Solomon, I. (1995) Substrate selectivity in the formation of microcrystalline silicon: Mechanisms and technological consequences. Applied Physics Letters, 66 (26). 3609-3611 doi:10.1063/1.113803
 
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