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Beyer, W., Mell, H. (1996) Comparative study of light-induced photoconductivity decay in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 198. 466-469 doi:10.1016/0022-3093(95)00736-9

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Reference TypeJournal (article/letter/editorial)
TitleComparative study of light-induced photoconductivity decay in hydrogenated amorphous silicon
JournalJournal of Non-Crystalline Solids
AuthorsBeyer, W.Author
Mell, H.Author
Year1996 (May)Volume198
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(95)00736-9Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID635429Long-form Identifiermindat:1:5:635429:3
GUID0
Full ReferenceBeyer, W., Mell, H. (1996) Comparative study of light-induced photoconductivity decay in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 198. 466-469 doi:10.1016/0022-3093(95)00736-9
Plain TextBeyer, W., Mell, H. (1996) Comparative study of light-induced photoconductivity decay in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 198. 466-469 doi:10.1016/0022-3093(95)00736-9
In(1996) Journal of Non-Crystalline Solids Vol. 198. Elsevier BV

See Also

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Cohen, J.David, Zhong, Fan (1996) Bias light induced defect relaxation phenomena in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 198. 512-516 doi:10.1016/0022-3093(95)00744-x
Fritzsche, H., Heck, S., Stradins, P. (1996) Dual beam and transient infrared stimulated photoconductivity in hydrogenated amorphous silicon at 4.2 K. Journal of Non-Crystalline Solids, 198. 153-156 doi:10.1016/0022-3093(95)00668-0
Beyer, W. (1996) Incorporation and thermal stability of hydrogen in amorphous silicon and germanium. Journal of Non-Crystalline Solids, 198. 40-45 doi:10.1016/0022-3093(95)00652-4
Hari, P., Taylor, P.C., Street, R.A. (1996) Hydrogen motion in hydrogenated amorphous silicon (a-Si:H) Journal of Non-Crystalline Solids, 198. 52-55 doi:10.1016/0022-3093(95)00655-9
Toyama, Toshihiko, Hiratsuka, Kazuhiro, Okamoto, Hiroaki, Hamakawa, Yoshihiro (1996) Hot-electron induced electroluminescence and avalanche multiplication in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 198. 198-201 doi:10.1016/0022-3093(95)00681-8
Beyer, W, Zastrow, U (2000) Comparative study of hydrogen stability in hydrogenated amorphous and crystalline silicon. Journal of Non-Crystalline Solids, 266. 206-210 doi:10.1016/s0022-3093(99)00822-4
Robertson, J. (1996) Electronic processes in hydrogenated amorphous carbon. Journal of Non-Crystalline Solids, 198. 615-618 doi:10.1016/0022-3093(95)00775-x
Tzanetakis, P., Mell, H., Fuhs, W. (1991) Transient photocurrent regimes in hydrogenated amorphous silicon films under weak, square pulse illumination. Journal of Non-Crystalline Solids, 137. 463-466 doi:10.1016/s0022-3093(05)80155-3
Longeaud, C., Kleider, J.P. (1996) Density of states and capture cross-sections in annealed and light-soaked hydrogenated amorphous silicon layers. Journal of Non-Crystalline Solids, 198. 355-358 doi:10.1016/0022-3093(95)00707-5
Naito, Hiroyoshi, Kodama, Shin-ichi, Kang, Qin Zhi, Okuda, Masahiro (1996) Photo-induced structural change in amorphous organic polysilanes: comparison with hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 198. 653-656 doi:10.1016/0022-3093(95)00783-0
Abelson, John (1989) Photoconductivity of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 114. 450-452 doi:10.1016/0022-3093(89)90614-5
 
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