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Longeaud, C., Kleider, J.P. (1996) Density of states and capture cross-sections in annealed and light-soaked hydrogenated amorphous silicon layers. Journal of Non-Crystalline Solids, 198. 355-358 doi:10.1016/0022-3093(95)00707-5

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Reference TypeJournal (article/letter/editorial)
TitleDensity of states and capture cross-sections in annealed and light-soaked hydrogenated amorphous silicon layers
JournalJournal of Non-Crystalline Solids
AuthorsLongeaud, C.Author
Kleider, J.P.Author
Year1996 (May)Volume198
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(95)00707-5Search in ResearchGate
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Mindat Ref. ID635400Long-form Identifiermindat:1:5:635400:2
GUID0
Full ReferenceLongeaud, C., Kleider, J.P. (1996) Density of states and capture cross-sections in annealed and light-soaked hydrogenated amorphous silicon layers. Journal of Non-Crystalline Solids, 198. 355-358 doi:10.1016/0022-3093(95)00707-5
Plain TextLongeaud, C., Kleider, J.P. (1996) Density of states and capture cross-sections in annealed and light-soaked hydrogenated amorphous silicon layers. Journal of Non-Crystalline Solids, 198. 355-358 doi:10.1016/0022-3093(95)00707-5
In(1996) Journal of Non-Crystalline Solids Vol. 198. Elsevier BV

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Dayoub, F., Kleider, J.P., Longeaud, C., Mencaraglia, D., Reynaud, J. (1996) Thermal bias annealing experiments on aluminum/silicon nitride/hydrogenated amorphous silicon top gate structures. Journal of Non-Crystalline Solids, 198. 318-321 doi:10.1016/0022-3093(95)00695-8
Kleider, J.P., Longeaud, C., Glodt, O. (1991) Study of the density of states of hydrogenated amorphous silicon from time-of-flight and modulated photocurrent experiments. Journal of Non-Crystalline Solids, 137. 447-450 doi:10.1016/s0022-3093(05)80151-6
Longeaud, C., Kleider, J.P., Mencaraglia, D., Amaral, A., Carvalho, C.N. (1993) Determination of the density of states in p-doped hydrogenated amorphous silicon by means of the modulated photocurrent experiment. Journal of Non-Crystalline Solids, 164. 423-426 doi:10.1016/0022-3093(93)90580-q
Cohen, J.David, Zhong, Fan (1996) Bias light induced defect relaxation phenomena in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 198. 512-516 doi:10.1016/0022-3093(95)00744-x
Beyer, W., Mell, H. (1996) Comparative study of light-induced photoconductivity decay in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 198. 466-469 doi:10.1016/0022-3093(95)00736-9
Zhou, Jiang-Huai, Kumeda, Minoru, Shimizu, Tatsuo (1996) Distribution of dangling bonds in light-soaked and in high-temperature-annealed a-Si:H. Journal of Non-Crystalline Solids, 198. 359-362 doi:10.1016/0022-3093(95)00721-0
Zhou, Jiang-Huai, Kumeda, Minoru, Shimizu, Tatsuo (1996) Diffusion-limited hydrogen evolution and the density of dangling bonds in high-temperature-annealed hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 195 (1) 76-82 doi:10.1016/0022-3093(95)00523-4
Robertson, J. (1996) Electronic processes in hydrogenated amorphous carbon. Journal of Non-Crystalline Solids, 198. 615-618 doi:10.1016/0022-3093(95)00775-x
Hari, P., Taylor, P.C., Street, R.A. (1996) Hydrogen motion in hydrogenated amorphous silicon (a-Si:H) Journal of Non-Crystalline Solids, 198. 52-55 doi:10.1016/0022-3093(95)00655-9
Toyama, Toshihiko, Hiratsuka, Kazuhiro, Okamoto, Hiroaki, Hamakawa, Yoshihiro (1996) Hot-electron induced electroluminescence and avalanche multiplication in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 198. 198-201 doi:10.1016/0022-3093(95)00681-8
Branz, Howard M., Unold, Thomas, Fedders, Peter A. (1996) Structural memory model of slow defect relaxation in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 198. 535-539 doi:10.1016/0022-3093(95)00755-5
 
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