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Nonomura, Shuichi, Hattori, Satoru, Hayashi, Hisanori, Itoh, Takashi, Nitta, Shoji (1989) Electronic states and structures of quasi-one-dimensional a-Si:H. Journal of Non-Crystalline Solids, 114. 729-731 doi:10.1016/0022-3093(89)90702-3

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Reference TypeJournal (article/letter/editorial)
TitleElectronic states and structures of quasi-one-dimensional a-Si:H
JournalJournal of Non-Crystalline Solids
AuthorsNonomura, ShuichiAuthor
Hattori, SatoruAuthor
Hayashi, HisanoriAuthor
Itoh, TakashiAuthor
Nitta, ShojiAuthor
Year1989 (December)Volume114
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(89)90702-3Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID629296Long-form Identifiermindat:1:5:629296:0
GUID0
Full ReferenceNonomura, Shuichi, Hattori, Satoru, Hayashi, Hisanori, Itoh, Takashi, Nitta, Shoji (1989) Electronic states and structures of quasi-one-dimensional a-Si:H. Journal of Non-Crystalline Solids, 114. 729-731 doi:10.1016/0022-3093(89)90702-3
Plain TextNonomura, Shuichi, Hattori, Satoru, Hayashi, Hisanori, Itoh, Takashi, Nitta, Shoji (1989) Electronic states and structures of quasi-one-dimensional a-Si:H. Journal of Non-Crystalline Solids, 114. 729-731 doi:10.1016/0022-3093(89)90702-3
In(1989) Journal of Non-Crystalline Solids Vol. 114. Elsevier BV

See Also

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Itoh, Takashi, Nitta, Shoji, Nonomura, Shuichi (1989) Optical properties of amorphous multilayers a-Si:H/a-Si3N4:H with random well or barrier layer. Journal of Non-Crystalline Solids, 114. 723-725 doi:10.1016/0022-3093(89)90700-x
Nitta, Shoji, Nonomura, Shuichi, Takagi, Ryouichi, Kojima, Nobuaki, Yasuda, Akihiro (1987) Deposition condition of hydrogenated amorphous carbon films having quasi-one dimensional structures. Journal of Non-Crystalline Solids, 97. 1451-1454 doi:10.1016/0022-3093(87)90348-6
Yoshida, Shigeru, Itoh, Takashi, Takada, Naoyuki, Nitta, Shoji, Nonomura, Shuichi (1998) Characterization of nitrogen in a-CN thin films by gas effusion spectroscopy. Journal of Non-Crystalline Solids, 227. 650-654 doi:10.1016/s0022-3093(98)00137-9
Nitta, Shoji, Nishimura, Erika, Minamide, Takahiro, Uchida, Takayuki, Nonomura, Shuichi (1993) Studies of optical absorption coefficients α of a-Si:H by photoluminescence absorption spectroscopy. Journal of Non-Crystalline Solids, 164. 913-916 doi:10.1016/0022-3093(93)91146-t
Nonomura, Shuichi, Ohta, Masuyuki, Suzuki, Hisataka, Muraki, Takahiro, Kusakabe, Shinji, Nitta, Shoji (1991) The hydrogen confinement and pipe diffusion in a-Si:H/a-Si3N4:H multilayer. Journal of Non-Crystalline Solids, 137. 1139-1142 doi:10.1016/s0022-3093(05)80324-2
Nitta, Shoji, Shimakawa, Koichi, Nonomura, Shuichi (1980) AC conduction of the heavily doped glow discharge amorphous silicon films. Journal of Non-Crystalline Solids, 35. 339-344 doi:10.1016/0022-3093(80)90617-1
Ley, Lothar (1989) Electronic structure of a-Si:H and its interfaces as determined by photoelectron spectroscopy. Journal of Non-Crystalline Solids, 114. 238-243 doi:10.1016/0022-3093(89)90124-5
Siefert, Jean-Marie (1989) In-situ determination of surface states in undoped and doped a-Si:H. Journal of Non-Crystalline Solids, 114. 744-746 doi:10.1016/0022-3093(89)90707-2
Matsuura, Hideharu (1989) Optically and thermally induced reversible changes of midgap states in undoped a-Si:H. Journal of Non-Crystalline Solids, 114. 609-611 doi:10.1016/0022-3093(89)90665-0
Hasegawa, S., Nitta, S., Nonomura, S. (1996) Ultra-low frequency CPM of a-Si:H and relaxation. Journal of Non-Crystalline Solids, 198. 544-547 doi:10.1016/0022-3093(95)00758-x
Han, S., Hess, B., Wei, X., Vardeny, Z., Nitta, Shoji (1989) Picosecond and CW photomodulation spectroscopy of polysilane alloys. Journal of Non-Crystalline Solids, 114. 588-590 doi:10.1016/0022-3093(89)90659-5
 
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