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Ley, Lothar (1989) Electronic structure of a-Si:H and its interfaces as determined by photoelectron spectroscopy. Journal of Non-Crystalline Solids, 114. 238-243 doi:10.1016/0022-3093(89)90124-5

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Reference TypeJournal (article/letter/editorial)
TitleElectronic structure of a-Si:H and its interfaces as determined by photoelectron spectroscopy
JournalJournal of Non-Crystalline Solids
AuthorsLey, LotharAuthor
Year1989 (December)Volume114
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(89)90124-5Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID629135Long-form Identifiermindat:1:5:629135:2
GUID0
Full ReferenceLey, Lothar (1989) Electronic structure of a-Si:H and its interfaces as determined by photoelectron spectroscopy. Journal of Non-Crystalline Solids, 114. 238-243 doi:10.1016/0022-3093(89)90124-5
Plain TextLey, Lothar (1989) Electronic structure of a-Si:H and its interfaces as determined by photoelectron spectroscopy. Journal of Non-Crystalline Solids, 114. 238-243 doi:10.1016/0022-3093(89)90124-5
In(1989) Journal of Non-Crystalline Solids Vol. 114. Elsevier BV

See Also

These are possibly similar items as determined by title/reference text matching only.

Arce, Roberto, Ley, Lothar, Hundhausen, Martin (1989) Random telegraphic noise in large area a-Si:H/a-Si1−xNx:H double barrier structures. Journal of Non-Crystalline Solids, 114. 696-697 doi:10.1016/0022-3093(89)90693-5
Schäfer, J., Ristein, J., Ley, L. (1993) Electronic structure and defect density of states of hydrogenated amorphous carbon (a-C:H) as determined by photoelectron and photoelectron yield spectroscopy. Journal of Non-Crystalline Solids, 164. 1123-1126 doi:10.1016/0022-3093(93)91196-a
Hoheisel, Martin, Brutscher, Norbert, Wieczorek, Herfried (1989) Amient-induced defect states at a-Si:H/ITO interfaces. Journal of Non-Crystalline Solids, 115 (1) 114-116 doi:10.1016/0022-3093(89)90378-5
Yoshida, M., Yamaguchi, M., Morigaki, K. (1989) Nature of triplet excitons in a-Si:H, its alloys and a-Si:H multilayers as elucidated by optically detected magnetic resonance measurements. Journal of Non-Crystalline Solids, 114. 319-321 doi:10.1016/0022-3093(89)90150-6
Schumm, G., Bauer, G.H. (1989) Defect structure and stability of a-Si:H by modulated photocurrent studies. Journal of Non-Crystalline Solids, 114. 660-662 doi:10.1016/0022-3093(89)90682-0
Mourchid, A, Vanderhaghen, R, Hulin, D, Tanguy, C, Fauchet, P.M (1989) Femtosecond optical spectroscopy in a-Si:H and its alloys. Journal of Non-Crystalline Solids, 114. 582-584 doi:10.1016/0022-3093(89)90657-1
Nakayama, Y, Takahashi, T, Watanabe, K, Kawamura, T (1989) Structure of interfaces in a-Si:H/a-Si3N4:H multilayers produced by plasma CVD. Journal of Non-Crystalline Solids, 114. 747-749 doi:10.1016/0022-3093(89)90708-4
Gertkemper, Th., Ristein, J., Ley, L. (1993) In Situ characterization of chemical annealing of a-Si:H by photoelectron spectroscopy. Journal of Non-Crystalline Solids, 164. 123-126 doi:10.1016/0022-3093(93)90507-t
Zhou, T.X., Vardeny, Z.V. (1989) Transient photomodulation studies of phosphorus doped a-Si:H. Journal of Non-Crystalline Solids, 114. 292-294 doi:10.1016/0022-3093(89)90141-5
Fritzsche, H. (1989) Low temperature electronic transport in non-crystalline semiconductors. Journal of Non-Crystalline Solids, 114. 1-6 doi:10.1016/0022-3093(89)90052-5
Nebel, C.E, Bauer, G.H (1989) Deep valence-band trap defect conversion by light soaking of a-Si:H. Journal of Non-Crystalline Solids, 114. 600-602 doi:10.1016/0022-3093(89)90662-5
 
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