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Arce, Roberto, Ley, Lothar, Hundhausen, Martin (1989) Random telegraphic noise in large area a-Si:H/a-Si1−xNx:H double barrier structures. Journal of Non-Crystalline Solids, 114. 696-697 doi:10.1016/0022-3093(89)90693-5

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Reference TypeJournal (article/letter/editorial)
TitleRandom telegraphic noise in large area a-Si:H/a-Si1−xNx:H double barrier structures
JournalJournal of Non-Crystalline Solids
AuthorsArce, RobertoAuthor
Ley, LotharAuthor
Hundhausen, MartinAuthor
Year1989 (December)Volume114
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(89)90693-5Search in ResearchGate
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Mindat Ref. ID629287Long-form Identifiermindat:1:5:629287:8
GUID0
Full ReferenceArce, Roberto, Ley, Lothar, Hundhausen, Martin (1989) Random telegraphic noise in large area a-Si:H/a-Si1−xNx:H double barrier structures. Journal of Non-Crystalline Solids, 114. 696-697 doi:10.1016/0022-3093(89)90693-5
Plain TextArce, Roberto, Ley, Lothar, Hundhausen, Martin (1989) Random telegraphic noise in large area a-Si:H/a-Si1−xNx:H double barrier structures. Journal of Non-Crystalline Solids, 114. 696-697 doi:10.1016/0022-3093(89)90693-5
In(1989) Journal of Non-Crystalline Solids Vol. 114. Elsevier BV

See Also

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Teuschler, Thomas, Hundhausen, Martin, Ley, Lothar (1991) Individual electronic defect states in a-Si:H/a-SiNx:H double barrier structures. Journal of Non-Crystalline Solids, 137. 1107-1110 doi:10.1016/s0022-3093(05)80316-3
Hundhausen, Martin (1989) Thermally stimulated conductivity in a-Si:H doping superlattices. Journal of Non-Crystalline Solids, 114. 720-722 doi:10.1016/0022-3093(89)90699-6
Ley, Lothar (1989) Electronic structure of a-Si:H and its interfaces as determined by photoelectron spectroscopy. Journal of Non-Crystalline Solids, 114. 238-243 doi:10.1016/0022-3093(89)90124-5
Yokomichi, Haruo, Kondo, Michio, Morigaki, Kazuo (1989) Electron-nuclear double resonance of dangling-bond centres in a-Si1−xNx:H and a-Si1−xNx. Journal of Non-Crystalline Solids, 114. 426-428 doi:10.1016/0022-3093(89)90606-6
Hirose, Masataka, Miyazaki, Seiichi (1984) Luminescence and transport in a-Si:H/a-Si1−xNx:H quantum well structures. Journal of Non-Crystalline Solids, 66 (1) 327-338 doi:10.1016/0022-3093(84)90340-5
Fiorini, P., Deseta, M., Evangelisti, F. (1989) Photoconductivity and interface defects in a-Si:H/a-Si1−xCxH multi-quantum-well structures. Journal of Non-Crystalline Solids, 114. 732-734 doi:10.1016/0022-3093(89)90703-5
Teuschler, T., Hundhausen, M., Ley, L., Arce, R. (1993) Analysis of random telegraph noise in large-area amorphous double-barrier structures. Physical Review B, 47 (19) 12687-12695 doi:10.1103/physrevb.47.12687
Kondo, M., Morigaki, K. (1989) Optically detected electron nuclear double resonance in a-Si:H. Journal of Non-Crystalline Solids, 114. 408-410 doi:10.1016/0022-3093(89)90600-5
Yamaguchi, M., Ogihara, C., Ohta, H., Morigaki, K. (1989) Optical properties of band-edge modulated a-Si1−xNx:H films. Journal of Non-Crystalline Solids, 114. 705-707 doi:10.1016/0022-3093(89)90694-7
Popescu, Benedict, Hundhausen, Martin, Ley, Lothar (2001) Study of space-charge-limited currents in high-voltage TFTs based on a-Si:H. Journal of Non-Crystalline Solids, 283 (1) 155-161 doi:10.1016/s0022-3093(01)00422-7
Bernhard, N., Frank, B., Bauer, G.H. (1993) Random Telegraphic Noise in a-Si1−χCχ:H Schottky Barriers. Journal of Non-Crystalline Solids, 164. 473-476 doi:10.1016/0022-3093(93)90592-l
 
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