(1987, February) Journal of Non-Crystalline Solids Vol. 90 (1) Elsevier BV

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Reference Type	Journal (issue)
Journal	Journal of Non-Crystalline Solids
Year	1987 (February)	Volume	90
Issue	1
Publisher	Elsevier BV
Mindat Ref. ID	627309	Long-form Identifier	mindat:1:5:627309:9
GUID	0
Full Reference	(1987, February) Journal of Non-Crystalline Solids Vol. 90 (1) Elsevier BV
Plain Text	(1987, February) Journal of Non-Crystalline Solids Vol. 90 (1) Elsevier BV
In	(1987) Journal of Non-Crystalline Solids Vol. 90. Elsevier BV

Contains

	*(1987) Editorial Board. Journal of Non-Crystalline Solids, 90 (1) doi:10.1016/s0022-3093(87)80369-1*
	*Kósa Somogyi, I. (1987) Preface. Journal of Non-Crystalline Solids, 90 (1) doi:10.1016/s0022-3093(87)80370-8*
	*(1987) International advisory board. Journal of Non-Crystalline Solids, 90 (1) doi:10.1016/s0022-3093(87)80371-x*
	*Kolomiets, B.T. (1987) Welcoming address. Journal of Non-Crystalline Solids, 90 (1) doi:10.1016/s0022-3093(87)80372-1*
	*Mott, N.F. (1987) Conduction bands in a non-crystalline environment. Journal of Non-Crystalline Solids, 90 (1) 1-8 doi:10.1016/s0022-3093(87)80373-3*
	Dersch, U., Overhof, H., Thomas, P. (1987) Theoretical approaches to the interpretation of transport and optical data of amorphous semiconductors. Journal of Non-Crystalline Solids, 90 (1) 9-15 doi:10.1016/s0022-3093(87)80374-5
	*Zvyagin, I.P. (1987) Some aspects of the transport phenomena near the mobility edge in disordered semiconductors. Journal of Non-Crystalline Solids, 90 (1) 17-20 doi:10.1016/s0022-3093(87)80375-7*
	Arkhincheev, V.E., Baskin, E.M., Batiyev, E.G. (1987) Diffusion and conductivity in percolation systems near the percolation threshold. Journal of Non-Crystalline Solids, 90 (1) 21-24 doi:10.1016/s0022-3093(87)80376-9
	*Viščor, Petr, Olsen, N.B. (1987) Frequency and time response in relaxation time semiconductors. Journal of Non-Crystalline Solids, 90 (1) 25-28 doi:10.1016/s0022-3093(87)80377-0*
	*Klinger, M.I. (1987) Low-energy excitations and localized electron states in glassy semiconductors. Journal of Non-Crystalline Solids, 90 (1) 29-36 doi:10.1016/s0022-3093(87)80378-2*
	*Malinovsky, V.K. (1987) Excitation relaxation processes in amorphous and vitreous materials. Journal of Non-Crystalline Solids, 90 (1) 37-44 doi:10.1016/s0022-3093(87)80379-4*
	Bottger, H., Wegener, D. (1987) Dispersion and damping of piionon-like excitations in structurally disordered systems. Journal of Non-Crystalline Solids, 90 (1) 45-48 doi:10.1016/s0022-3093(87)80380-0
	*Velicky, B., Pieczonkova, A. (1987) Theory of photoexcitation by ultrafast light pulses in disordered solids. Journal of Non-Crystalline Solids, 90 (1) 49-52 doi:10.1016/s0022-3093(87)80381-2*
	Arkhipov, V.I., Nikitenko, V.R., Rudenko, A.I., Shutov, S.D. (1987) Geminate recombination kinetics in amorphous semiconductors. Journal of Non-Crystalline Solids, 90 (1) 53-56 doi:10.1016/s0022-3093(87)80382-4
	*Evseevichev, N.I. (1987) Pseudopotential model of glassy semiconductors. Journal of Non-Crystalline Solids, 90 (1) 57-60 doi:10.1016/s0022-3093(87)80383-6*
	*Novikov, V.N. (1987) Structure disordering in curved space model. Journal of Non-Crystalline Solids, 90 (1) 61-64 doi:10.1016/s0022-3093(87)80384-8*
	*Cohen, Valentin, Popescu, Mihai (1987) The gauge theory and the topological disorder. Journal of Non-Crystalline Solids, 90 (1) 65-68 doi:10.1016/s0022-3093(87)80385-x*
	*Balmakov, M.D. (1987) Energy spectrum of stationary states for glassy semiconductors. Journal of Non-Crystalline Solids, 90 (1) 69-72 doi:10.1016/s0022-3093(87)80386-1*
	Wroński, Adam K., Urbański, Michał K., Pietruszko, Stanisław M. (1987) The theory of amorphous silicon in the coherent potential approximation (CPA) Journal of Non-Crystalline Solids, 90 (1) 73-76 doi:10.1016/s0022-3093(87)80387-3
	*Adler, David (1987) Electronic structure of hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 90 (1) 77-89 doi:10.1016/s0022-3093(87)80388-5*
	*Kočka, Jan (1987) The density of states in undoped and doped amorphous hydrogenated silicon. Journal of Non-Crystalline Solids, 90 (1) 91-98 doi:10.1016/s0022-3093(87)80389-7*
	*Wilke, S., Mašek, J., Velicky, B. (1987) The electronic structure of a-SiHx alloys. Journal of Non-Crystalline Solids, 90 (1) 99-102 doi:10.1016/s0022-3093(87)80390-3*
	Drchal, Václav, Málek, Jiří (1987) Atomic and electronic structure of a-SiHx based on the large-scale CRN model. Journal of Non-Crystalline Solids, 90 (1) 103-106 doi:10.1016/s0022-3093(87)80391-5
	Balagurov, L.A., Mackus, P., Omeljanovsky, E.M., Starikov, M.N. (1987) Energetic spectrum of deep localized states of D-centers originated from silicon dangling bonus in a-Si:H. Journal of Non-Crystalline Solids, 90 (1) 107-109 doi:10.1016/s0022-3093(87)80392-7
	Dvurechenskii, A.V., Ryazantsev, I.A., Yakimov, A.I., Dravin, V.A. (1987) Wide coulomb gap in localized states of 3d-metals in amorphous silicon. Journal of Non-Crystalline Solids, 90 (1) 111-114 doi:10.1016/s0022-3093(87)80393-9
	Qiu, Changhua, Han, Daxing (1987) Study of gap states distribution on a-Si:H by means of steady state photoconductivity and photoconductivity response time. Journal of Non-Crystalline Solids, 90 (1) 115-118 doi:10.1016/s0022-3093(87)80394-0
	Krapchev, Andrei, Haiduk, Achim (1987) Flat band voltage determination from temperature dependent field effect conductance in a-Si:H. Journal of Non-Crystalline Solids, 90 (1) 119-122 doi:10.1016/s0022-3093(87)80395-2
	Augelli, V., Berardi, V., Murri, R., Schiavulli, L. (1987) Evaluation of density of states distribution in amorphous silicon films by photoconductivity measurements. Journal of Non-Crystalline Solids, 90 (1) 123-126 doi:10.1016/s0022-3093(87)80396-4
	Domashevskaya, E.P., Desyatirikova, E.N., Khokhlov, A.F., Terekhov, V.A., Timoshenko, Yu.K. (1987) Theoretical and X-ray spectral investigations of density of states in amorphous silicon-germanium layers. Journal of Non-Crystalline Solids, 90 (1) 127-130 doi:10.1016/s0022-3093(87)80397-6
	*Petö, G., Kanski, J. (1987) Valence band density of states of 74+as implanted amorphous germanium. Journal of Non-Crystalline Solids, 90 (1) 131-134 doi:10.1016/s0022-3093(87)80398-8*
	Domashevskaya, E.P., Golikova, O.A., Terekhov, V.A., Trostyanskii, S.N. (1987) Density of states and photoconductivity in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 90 (1) 135-138 doi:10.1016/s0022-3093(87)80399-x
	*Morigaki, Kazuo, Yoshida, Mihoko (1987) Triplet exciton recombination in a-Si:H. Journal of Non-Crystalline Solids, 90 (1) 139-146 doi:10.1016/s0022-3093(87)80400-3*
	Wenhao, W.U., Changhua, Qiu, Shifu, Zhao, Daxing, Han (1987) Study of trapped non-equilibrium carriers in a-Si:H by a two-beam experiment. Journal of Non-Crystalline Solids, 90 (1) 147-150 doi:10.1016/s0022-3093(87)80401-5
	*Wu, Y., Stesmans, A. (1987) Influence of deposition rate on ESR signals in a-Si. Journal of Non-Crystalline Solids, 90 (1) 151-154 doi:10.1016/s0022-3093(87)80402-7*
	Taurbaev, T.I., Koshumbekov, Kh.J., Mukanov, Kh.K., Mukashev, F.A. (1987) Electrophysical properties of amorphous silicon films prepared by CVD method. Journal of Non-Crystalline Solids, 90 (1) 155-158 doi:10.1016/s0022-3093(87)80403-9
	Zherzdev, A.V., Andreev, A.A., Kosarev, A.I., Kougia, K.V., Shlimak, I.S. (1987) Recombination mechanisms of photogenerated carriers in a-Si:H. Journal of Non-Crystalline Solids, 90 (1) 159-162 doi:10.1016/s0022-3093(87)80404-0
	Zentai, Gy., Pászti, F., Manuaba, A. (1987) The application of ERD and RBS techniques for determining h depth profiles and impurity contents in a-Si:H layers. Journal of Non-Crystalline Solids, 90 (1) 163-166 doi:10.1016/s0022-3093(87)80405-2
	Bertolotti, M., Ferrari, A., Evangelisti, F., Fiorini, P. (1987) Thermal and laser treatment of light induced defects in hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 90 (1) 167-170 doi:10.1016/s0022-3093(87)80406-4
	*Spear, W.E. (1987) The investigation of transport properties in a-si by fast transient techniques. Journal of Non-Crystalline Solids, 90 (1) 171-178 doi:10.1016/s0022-3093(87)80407-6*
	*Kocka, Jan, Schauer, František (1987) Meyer-neldel rule in undoped a-Si:H, examined by tm-sclc method. Journal of Non-Crystalline Solids, 90 (1) 179-182 doi:10.1016/s0022-3093(87)80408-8*
	Vaněček, M., Kočka, J., Demo, P., Šípek, E., Tříska, A. (1987) Steady-state transport under non-equilibrium conditions in undoped and phosphorus doped a-Si:H at very low temperature. Journal of Non-Crystalline Solids, 90 (1) 183-186 doi:10.1016/s0022-3093(87)80409-x
	Tóth, László, Gazsó, János (1987) The effects of sample capacitance and light intensity on the time-of-flight signal in a-Si:H. Journal of Non-Crystalline Solids, 90 (1) 187-190 doi:10.1016/s0022-3093(87)80410-6
	*Gazsó, János, Tóth, László (1987) Field-effect problems with I-V measurements on gap-type a-Si:H specimens. Journal of Non-Crystalline Solids, 90 (1) 191-194 doi:10.1016/s0022-3093(87)80411-8*
	Bullot, J., Cordier, P., Gauthier, M., Haddab, K. (1987) Space charge limited currents under illumination in a-Si:H. Journal of Non-Crystalline Solids, 90 (1) 195-198 doi:10.1016/s0022-3093(87)80412-x
	Schropp, R.E.I., Franke, T., Verwey, J.F. (1987) The illumination flux dependence of the photofield-effect current in amorphous silicon. Journal of Non-Crystalline Solids, 90 (1) 199-202 doi:10.1016/s0022-3093(87)80413-1
	Nebel, C.E., Bauer, G.H. (1987) Evidence for weak electron-multiphonon coupling in a-Si:H and alloys from transient photocurrent analyses. Journal of Non-Crystalline Solids, 90 (1) 203-206 doi:10.1016/s0022-3093(87)80414-3
	*Kurova, I.A., Zvyagin, I.P. (1987) Dangling-bond recombination and photoconductivity of a-Si:H. Journal of Non-Crystalline Solids, 90 (1) 207-210 doi:10.1016/s0022-3093(87)80415-5*
	Kudoyarova, V.Kh., Kulikov, G.S., Terukov, E.I., Khodzaev, K.K. (1987) Impurity diffusion in amorphous hydrogenated silicon. Journal of Non-Crystalline Solids, 90 (1) 211-214 doi:10.1016/s0022-3093(87)80416-7
	Fustoss-Wégner, Maria, Zentai, György, Pogány, Lajos (1987) The effect of the morphology on the transport properties of α-Si:H layers. Journal of Non-Crystalline Solids, 90 (1) 215-218 doi:10.1016/s0022-3093(87)80417-9
	*LeComber, P.G. (1987) Applications and defects in amorphous silicon. Journal of Non-Crystalline Solids, 90 (1) 219-227 doi:10.1016/s0022-3093(87)80418-0*
	*Ovshinsky, Stanford R., Adler, David (1987) Progress in the science and application of amorphous materials. Journal of Non-Crystalline Solids, 90 (1) 229-241 doi:10.1016/s0022-3093(87)80419-2*
	*Hoheisel, M., Brunst, G., Wieczorek, H. (1987) Physical aspects of a-Si:H image sensors. Journal of Non-Crystalline Solids, 90 (1) 243-246 doi:10.1016/s0022-3093(87)80420-9*
	*Juška, Gytis (1987) Collection efficiency in a-Si:H light converters. Journal of Non-Crystalline Solids, 90 (1) 247-250 doi:10.1016/s0022-3093(87)80421-0*
	Nesládek, M., Kocka, J., Vanecek, M., Stuchlík, J., Štika, O., Dlouhý, J., Šípek, E., Jedlička, M. (1987) Amorphous silicon vidicon target. Journal of Non-Crystalline Solids, 90 (1) 251-254 doi:10.1016/s0022-3093(87)80422-2
	Taurbaev, T.I., Aitmambetov, R.M., Swanbaev, E.A., Manakov, S.M., Suleimenov, M.D. (1987) Photosensitive a-Si:H devices fabricated by DC magnetron reactive sputtering. Journal of Non-Crystalline Solids, 90 (1) 255-258 doi:10.1016/s0022-3093(87)80423-4
	Lucovsky, Gerald, Tsu, David V. (1987) Deposition of silicon oxide, nitride and oxynitride thin films by remote plasma enhanced chemical vapor deposition. Journal of Non-Crystalline Solids, 90 (1) 259-266 doi:10.1016/s0022-3093(87)80424-6
	*Stötzel, H. (1987) Properties of a-SiNx:H films. Journal of Non-Crystalline Solids, 90 (1) 267-274 doi:10.1016/s0022-3093(87)80425-8*
	Guanghua, Chen, Fangqing, Zhang, Xixiang, Xu, Chengzhi, Zheng (1987) ESR and IR studies on doped a-Si1 − xCx :H and a-Si1 − xNx:H films. Journal of Non-Crystalline Solids, 90 (1) 275-282 doi:10.1016/s0022-3093(87)80426-x
	*Könenkamp, Rolf (1987) Charge storage in deep traps of a-SiC:H films. Journal of Non-Crystalline Solids, 90 (1) 283-286 doi:10.1016/s0022-3093(87)80427-1*
	Cros, Y., Jousse, D., Liu, J., Rostaing, J.C. (1987) IR, ESR and resistivity measurements on amorphous silicon oxi-nitride films prepared by PECVD at low temperature. Journal of Non-Crystalline Solids, 90 (1) 287-290 doi:10.1016/s0022-3093(87)80428-3
	Delima, J.J., Snell, A.J., Krishna, K.V., Owen, A.E. (1987) IR and RBS studies of RF sputtered films of vanadium doped silicon dioxide. Journal of Non-Crystalline Solids, 90 (1) 291-294 doi:10.1016/s0022-3093(87)80429-5
	Xixiang, Xu, Fangqing, Zhang, Guanghua, Chen (1987) Valence-electron properties of a-Si1 − xCx:H studied by UPS and EELS. Journal of Non-Crystalline Solids, 90 (1) 295-298 doi:10.1016/s0022-3093(87)80430-1
	qing, Zhang Fang, Yafei, Zhang, Guanghua, Chen (1987) Injection-electroluminescence in a-Si1 − xCx:H/nin−p structure. Journal of Non-Crystalline Solids, 90 (1) 299-302 doi:10.1016/s0022-3093(87)80431-3
	Danesh, P., Savatinova, I., Anachkova, E., Georgiev, St., Anastassakis, E., Liarokapis, E. (1987) Structural order in a-Si:H:Cl films. Journal of Non-Crystalline Solids, 90 (1) 303-306 doi:10.1016/s0022-3093(87)80432-5
	Manaila, R., Devenyi, A., Barna, P.B., Radnoczi, G., Grigorovici, R. (1987) Growth mechanism in amorphous films: A computer simulation. Journal of Non-Crystalline Solids, 90 (1) 307-313 doi:10.1016/s0022-3093(87)80433-7
	Geszti, Olga, Gosztola, László, Seyfried{, Éva (1987) Dependence of the columnar structure of obliquely evaporated SiOx thin films on the angle of deposition and the rate of condensation. Journal of Non-Crystalline Solids, 90 (1) 315-318 doi:10.1016/s0022-3093(87)80434-9
	Jecu{, Doina, Jaklovszky, Jenö, Trutia, Atanasie, Apostol, Ileana, Dinescu, Maria, Mihailescu, Ion N., Aldica, Gheorghe, Popescu, Mihai, Vlahovici, Nicolae, Zamfira, Sorin, Indrea, Emil (1987) Preparation, structure and optical properties of glasses in the systems selenium-sulphur and tellurium-sulphur. Journal of Non-Crystalline Solids, 90 (1) 319-322 doi:10.1016/s0022-3093(87)80435-0
	Suchaneck, Gunnar, Mönch, Jens-Peter, Schade, Klaus, Paul, Wolfram (1987) Optical emission spectroscopy of silane/argon magnetron discharges. Journal of Non-Crystalline Solids, 90 (1) 323-326 doi:10.1016/s0022-3093(87)80436-2
	*Koynov, Svetoslav, Toneva, Atanaska (1987) Preparation of a-Si: H by cross homogeneous cvd method. Journal of Non-Crystalline Solids, 90 (1) 327-330 doi:10.1016/s0022-3093(87)80437-4*
	*Popescu, Mihai (1987) Structural modelling of the amorphous-amorphous interface. Journal of Non-Crystalline Solids, 90 (1) 331-334 doi:10.1016/s0022-3093(87)80438-6*
	*Il'Chenko, V.V., Strikha, V.I. (1987) Current transport mechanisms for the metal-amorphous silicon contact. Journal of Non-Crystalline Solids, 90 (1) 335-338 doi:10.1016/s0022-3093(87)80439-8*
	Andriesh, A.M., Akimova, E.A., Buzdugan, A.I., Iovu, M.S., Simashkevich, A.A., Verlan, V.I. (1987) Injection sensibilization of photoeffect in two-layer glassy semiconductor heterostructures. Journal of Non-Crystalline Solids, 90 (1) 339-342 doi:10.1016/s0022-3093(87)80440-4
	Shaoqi, Peng, Zinin, Su, Zainin, Lin, Guanghua, Chen (1987) Voltage dependent internal photoemission study of the energy band structure of the Al/a-Si:H interface. Journal of Non-Crystalline Solids, 90 (1) 343-346 doi:10.1016/s0022-3093(87)80441-6
	Šmíd, Václav, Kozár, Stanislav, Mares, Jiří J., Kristofik, Jozef, Zemek, Josef, Štourač, Ladislav, Vlášek, Václav (1987) Schottky barrier on n-GaAs formed by amorphous tungsten silicide. Journal of Non-Crystalline Solids, 90 (1) 347-350 doi:10.1016/s0022-3093(87)80442-8
	Pivovarova, L.V., Kotchemirovsky, A.S., Mamontova, T.N. (1987) Characteristics of electronic processes on the surface of chalcogenide glassy semiconductors. Journal of Non-Crystalline Solids, 90 (1) 351-354 doi:10.1016/s0022-3093(87)80443-x
	*Dembovsky, S.A. (1987) Quasimolecular defects as a unified microscopic basis of the glassy state. Journal of Non-Crystalline Solids, 90 (1) 355-362 doi:10.1016/s0022-3093(87)80444-1*
	*Tanaka, Keiji (1987) Pressure-structural and optical studies of glassy chalcogenides. Journal of Non-Crystalline Solids, 90 (1) 363-370 doi:10.1016/s0022-3093(87)80445-3*
	*Červinka, Ladislav (1987) Medium-range ordering in non-crystalline solids. Journal of Non-Crystalline Solids, 90 (1) 371-381 doi:10.1016/s0022-3093(87)80446-5*
	*Manaila, Rodica, Macovei, Dan (1987) Exafs in amorphous materials. Journal of Non-Crystalline Solids, 90 (1) 383-392 doi:10.1016/s0022-3093(87)80447-7*
	Shantarovich, V.P., Kobrin, B.V. (1987) Positron annihilation study of defects and microheterogeneity of chalcogenide glassy semiconductors. Journal of Non-Crystalline Solids, 90 (1) 393-396 doi:10.1016/s0022-3093(87)80448-9
	Ďurček, Jozef, Jamnický, Igor, Koštial, Pavol, Štourač, Ladislav (1987) Ultrasonic investigation of dynamic properties of the amorphous network. Journal of Non-Crystalline Solids, 90 (1) 397-400 doi:10.1016/s0022-3093(87)80449-0
	Kosek, František, Cimpl, Zdeněk, Tulka, Jiři, Chlebný, Jiři (1987) New analytic method for investigation of the distribution of bonds in As-S system. Journal of Non-Crystalline Solids, 90 (1) 401-404 doi:10.1016/s0022-3093(87)80450-7
	*Tveryanovich, Yu.S., Borisova, Z.U. (1987) On the doping of chalcogenide glassy semiconductors. Journal of Non-Crystalline Solids, 90 (1) 405-412 doi:10.1016/s0022-3093(87)80451-9*
	*El-Den, M.B., Olsen, N.B., Viščor, Petr (1987) D.C. and A.C. Electrical transport in assete system. Journal of Non-Crystalline Solids, 90 (1) 413-416 doi:10.1016/s0022-3093(87)80452-0*
	Baranovskii, S.D., Gelmont, B.L., Tsendin, K.O. (1987) Impurity conduction of chalcogenide vitreous semiconductors. Journal of Non-Crystalline Solids, 90 (1) 417-419 doi:10.1016/s0022-3093(87)80453-2
	Kahnt, Hanno, Schirrmeister, Falk (1987) Ionic diffusion and frequency dependent conductivity in amor-phous materials. Journal of Non-Crystalline Solids, 90 (1) 421-424 doi:10.1016/s0022-3093(87)80454-4
	Kunji, Chen, Jiafang, DU, Zhifeng, LI, Guomin, Mao, Hong, Chen, Fritzsche, H. (1987) Persistent photoconductivity in compositional modulated amorphous semiconductors. Journal of Non-Crystalline Solids, 90 (1) 425-428 doi:10.1016/s0022-3093(87)80455-6
	*Tóth, L., Kazakova, L.P. (1987) Light induced reversible drift mobility effect in a-asse thin films. Journal of Non-Crystalline Solids, 90 (1) 429-432 doi:10.1016/s0022-3093(87)80456-8*
	Lipinski, A., Ziołkowska-Pawlak, B., Mycielski, W., Mitkova, M., Bontcheva-Mladenova, Z. (1987) Drift mobility in Ge-Se-Ga glasses. Journal of Non-Crystalline Solids, 90 (1) 433-436 doi:10.1016/s0022-3093(87)80457-x
	Juška, Gytis, Arlauskas, Kestutis, Vengris, Saulius (1987) Field disactivation of hole drift mobility in amorphous selenium. Journal of Non-Crystalline Solids, 90 (1) 437-439 doi:10.1016/s0022-3093(87)80458-1
	Vikhrov, S.P., Ampilogov, V.N. (1987) Electronic conductivity of (Gese3.5)100 − xBix and (GeS3.5)100 − xBix in solid and liquid states. Journal of Non-Crystalline Solids, 90 (1) 441-444 doi:10.1016/s0022-3093(87)80459-3
	Vikhrov, S.P., Ampilogov, V.N., Mal'chenko, S.I. (1987) Salient features of charge transport in solid and liquid disordered states of the Ge16Te80X4 system. Journal of Non-Crystalline Solids, 90 (1) 445-448 doi:10.1016/s0022-3093(87)80460-x
	Abdulgafarov, S.E., Averyanov, V.L., Kolomiets, B.T., Lyubin, V.M. (1987) Photoelectric properties of As2Se3 modified with transition (Ni) and nontransition (Bi) metals. Journal of Non-Crystalline Solids, 90 (1) 449-452 doi:10.1016/s0022-3093(87)80461-1
	Malinovsky, V.K., Novikov, V.N., Sokolov, A.P. (1987) The nature of anomalous temperature dependence of photoluminescence in glasses. Journal of Non-Crystalline Solids, 90 (1) 453-456 doi:10.1016/s0022-3093(87)80462-3
	*Sobiesierski, Z., Phillips, R.T. (1987) Time-resolved photoluminescence in amorphous phosphorus. Journal of Non-Crystalline Solids, 90 (1) 457-460 doi:10.1016/s0022-3093(87)80463-5*
	*Dulea, M., Aldea, A. (1987) Photoluminescence of the hopping disordered systems with electrical bias. Journal of Non-Crystalline Solids, 90 (1) 461-464 doi:10.1016/s0022-3093(87)80464-7*
	*Ramsden, J.J. (1987) Luminescence from very small semiconductor particles — high excitation effects. Journal of Non-Crystalline Solids, 90 (1) 465-468 doi:10.1016/s0022-3093(87)80465-9*
	Koós, Margit, Pócsik, István, Somogyi, István Kósa (1987) Photoluminescence transients in the amorphous GexSe1 − x system. Journal of Non-Crystalline Solids, 90 (1) 469-471 doi:10.1016/s0022-3093(87)80466-0
	Milov, V.V., Mamontova, T.N. (1987) Effect of chemical etching on the photoluminescence of As-Ge-Se chalcogenide glassy semiconductors. Journal of Non-Crystalline Solids, 90 (1) 473-476 doi:10.1016/s0022-3093(87)80467-2
	Mikhailov, N.I., Bekitcheva, I.V., Voronkov, E.N., Popov, A.I., Smirnova, L.Yu. (1987) Optical properties of chalcogenide glassy semiconductors in multilayer structures. Journal of Non-Crystalline Solids, 90 (1) 477-480 doi:10.1016/s0022-3093(87)80468-4
	*Minkov, D., Vateva, E., Skordeva, E., Arsova, D., Nikiforova, M. (1987) Optical properties of Ge-As-S thin films. Journal of Non-Crystalline Solids, 90 (1) 481-484 doi:10.1016/s0022-3093(87)80469-6*
	Malinovsky, V.K., Novikov, V.N., Sokolov, A.P. (1987) Investigation of structural correlations in disordered materials by Raman scattering measurements. Journal of Non-Crystalline Solids, 90 (1) 485-488 doi:10.1016/s0022-3093(87)80470-2
	Lyubin, V.M., Kolobov, A.V. (1987) Photoinduced processes in chalcogenide vitreous semiconductor-metal structures. Journal of Non-Crystalline Solids, 90 (1) 489-495 doi:10.1016/s0022-3093(87)80471-4
	*Vateva, Elena, Nesheva, Diana (1987) Photo-induced phenomena in chalcogenide structures. Journal of Non-Crystalline Solids, 90 (1) 497-504 doi:10.1016/s0022-3093(87)80472-6*
	Manika, I., Teteris, J. (1987) Photoinduced changes of mechanical properties in amorphous arsenic chalcogenide films. Journal of Non-Crystalline Solids, 90 (1) 505-508 doi:10.1016/s0022-3093(87)80473-8
	Shvarts, K.K., Teteris, J.A., Manika, I.P., Reinfelde, M.J., Gerbreder, V.I. (1987) Photoinduced changes of refractive index in amorphous arsenic and antimony chalcogenides. Journal of Non-Crystalline Solids, 90 (1) 509-511 doi:10.1016/s0022-3093(87)80474-x
	Vlček, Miroslav, Frumar, Miloslav, Vidourek, Arnošt (1987) Photoinduced effects in Ge-Sb-S glasses and amorphous layers. Journal of Non-Crystalline Solids, 90 (1) 513-516 doi:10.1016/s0022-3093(87)80475-1
	Wágner, Tomáš, Frumar, Miloslav, Beneš, Ludvík (1987) Photoenhanced dissolution and diffusion of Ag in As2Sx layers. Journal of Non-Crystalline Solids, 90 (1) 517-520 doi:10.1016/s0022-3093(87)80476-3
	Budinas, T., Mačkus, P., Savytsky, I.V., Shpotyuk, O.I. (1987) Spectroscopic investigations of induced processes in arsenic sulfide chalcogenide glasses. Journal of Non-Crystalline Solids, 90 (1) 521-523 doi:10.1016/s0022-3093(87)80477-5
	Domoryad, I.A., Spirina, M.G., Timochina, N.I. (1987) Effect of 60Co γ-radiation on the solubility of glassy selenium. Journal of Non-Crystalline Solids, 90 (1) 525-528 doi:10.1016/s0022-3093(87)80478-7
	Jánossy, I., Hajtó, J., Choi, W.K. (1987) Mechanism of laser-induced optical anisotropy in chalcogenide glasses. Journal of Non-Crystalline Solids, 90 (1) 529-532 doi:10.1016/s0022-3093(87)80479-9
	*Popescu, Mihai (1987) Computer-assisted modelling of photostructural transformations in amorphous As3Se2. Journal of Non-Crystalline Solids, 90 (1) 533-536 doi:10.1016/s0022-3093(87)80480-5*
	Mazets, T.F., Pavlov, S.K., Smorgonskaya, E.A., Shifrin, E.I. (1987) Photoabsorption and photorefraction in glassy As2Se3 films under pulsed excitation. Journal of Non-Crystalline Solids, 90 (1) 537-540 doi:10.1016/s0022-3093(87)80481-7
	Stoycheva, Rumiana, Simidchieva, Penka, Buroff, Atanas (1987) Temperature dependence of the photodissociation of a-As2S3. Journal of Non-Crystalline Solids, 90 (1) 541-544 doi:10.1016/s0022-3093(87)80482-9
	*Feltz, Adalbert (1987) Ionic conducting glasses for batteries and wave-guide devices. Journal of Non-Crystalline Solids, 90 (1) 545-555 doi:10.1016/s0022-3093(87)80483-0*
	*Lezal, Dimitrij, Kašík, Ivan, Götz, Jiři (1987) Gex(Se1 − yTey)1 − x glasses for optical application. Journal of Non-Crystalline Solids, 90 (1) 557-560 doi:10.1016/s0022-3093(87)80484-2*
	Trnovcová, Viera, Pazurová, Tetiana, Šrámková, Tatiana, Lezal, Dimitrij (1987) Optimizing of multicomponent seleno-telluride glasses for optical fibers applied to power transmission at 10.6 μm. Journal of Non-Crystalline Solids, 90 (1) 561-564 doi:10.1016/s0022-3093(87)80485-4
	Andriesh, A.M., Bolshakov, O.V., Zhitar, V.V., Popesku, A.A. (1987) Optical effects in thin film waveguides of glassy arsenic sulphide. Journal of Non-Crystalline Solids, 90 (1) 565-568 doi:10.1016/s0022-3093(87)80486-6
	*Ivanova, Zoja (1987) Some applications of Ge-S-AIII glasses in microelectronics and optics. Journal of Non-Crystalline Solids, 90 (1) 569-572 doi:10.1016/s0022-3093(87)80487-8*
	Kaps, Christian, Göring, Rolf (1987) On the generation of optically wave-guiding layers in silicate glasses by doping with heavy metals. Journal of Non-Crystalline Solids, 90 (1) 573-576 doi:10.1016/s0022-3093(87)80488-x
	*Cimpl, Zdeněk, Kosek, František (1987) Utilization of chalcogenide glasses in infrared optics. Journal of Non-Crystalline Solids, 90 (1) 577-579 doi:10.1016/s0022-3093(87)80489-1*
	*Hajtó, Éva, Zentai, György (1987) Submicron resolution amorphous chalcogenide optical grid. Journal of Non-Crystalline Solids, 90 (1) 581-584 doi:10.1016/s0022-3093(87)80490-8*
	Buroff, Atanas, Rush, Antony D. (1987) Photolithographic performance of a-As2S3 resists under synchrotron X-ray irradiation. Journal of Non-Crystalline Solids, 90 (1) 585-588 doi:10.1016/s0022-3093(87)80491-x
	*Mitkova, M., Boncheva-Mladenova, Z. (1987) Selective solubility of some silver-chalcogenide glasses. Journal of Non-Crystalline Solids, 90 (1) 589-592 doi:10.1016/s0022-3093(87)80492-1*
	*Kudoyarova, V.Kh. (1987) The effect of DC electric field on Ag migration in glassy Ge2S3. Journal of Non-Crystalline Solids, 90 (1) 593-596 doi:10.1016/s0022-3093(87)80493-3*
	*Glebov, A.S., Rozhkova, G.V. (1987) Kinetic model for switching in chalcogenide glassy semiconductors. Journal of Non-Crystalline Solids, 90 (1) 597-600 doi:10.1016/s0022-3093(87)80494-5*
	Babenskas, E., Balevičius, S., Česnys, A., Poškus, A., Šiktorov, N. (1987) Past switching in sandwich structures on the basis of GexTe1 − x alloys. Journal of Non-Crystalline Solids, 90 (1) 601-604 doi:10.1016/s0022-3093(87)80495-7
	Kalmykova, N.P., Smorgonskaya, E.A., Shpunt, V.Kh. (1987) Electronic processes and the dynamics of the highly conductive filament formation in bulk samples of a chalcogenide vitreous semiconductor under high electric field. Journal of Non-Crystalline Solids, 90 (1) 605-608 doi:10.1016/s0022-3093(87)80496-9
	Česnys, A., Oginskas, A., Gaška, K., Lisauskas, V. (1987) Microwave noise and transient on-characteristics as an efficient source of information in investigating the on-state of the switching structures. Journal of Non-Crystalline Solids, 90 (1) 609-612 doi:10.1016/s0022-3093(87)80497-0
	Nesheva, Diana, Vateva, Elena (1987) Influence of in on some electrical, photoelectrical and optical properties of a-CdS. Journal of Non-Crystalline Solids, 90 (1) 613-616 doi:10.1016/s0022-3093(87)80498-2
	*Rachkovskaya, G.E., Bobkova, N.M. (1987) Semiconducting niobate-phosphate glasses. Structure and properties. Journal of Non-Crystalline Solids, 90 (1) 617-620 doi:10.1016/s0022-3093(87)80499-4*
	Modebadze, O.E. (1987) Configuration and possible interactions of structural elements in boron-bismuth-oxide glassy semiconductors. Journal of Non-Crystalline Solids, 90 (1) 621-624 doi:10.1016/s0022-3093(87)80500-8
	Bogomolova, L.D., Filatova, I.V., Glassova, M.P., Spasibkina, S.N. (1987) Semiconducting oxide glasses containing vanadium and copper simultaneously. Journal of Non-Crystalline Solids, 90 (1) 625-628 doi:10.1016/s0022-3093(87)80501-x
	*Murawski, Leon (1987) Polaronic hopping conduction in vanadium and iron phosphate glasses. Journal of Non-Crystalline Solids, 90 (1) 629-632 doi:10.1016/s0022-3093(87)80502-1*
	*Burian, Andrzej, Lecante, Pierre, Mosset, Alain, Galy, Jean (1987) Structural study of amorphous Cd-As films. Journal of Non-Crystalline Solids, 90 (1) 633-636 doi:10.1016/s0022-3093(87)80503-3*
	Ramans, G.M., Gabrusenoks, J.V., Lusis, A.R., Patmalnieks, A.A. (1987) Structure of amorphous thin films of WO3 and MoO3. Journal of Non-Crystalline Solids, 90 (1) 637-640 doi:10.1016/s0022-3093(87)80504-5
	Turło, J., Rozwadowska-Jaśniewska, K. (1987) Optical and electrical energy gap investigations in low-temperature glassy carbon layers. Journal of Non-Crystalline Solids, 90 (1) 641-644 doi:10.1016/s0022-3093(87)80505-7
	*Ziołkowska-Pawlak, B., Mycielski, W. (1987) Anomalous transport in disordered organic layers. Journal of Non-Crystalline Solids, 90 (1) 645-648 doi:10.1016/s0022-3093(87)80506-9*
	Bak, Grzegorz W., Szymański, Aleksander (1987) Relation between structural perfection and electrical conduction in organic solids. Journal of Non-Crystalline Solids, 90 (1) 649-652 doi:10.1016/s0022-3093(87)80507-0
	Bak, Grzegorz W., Lipiński, Andrzej (1987) Dielectric measurements as an indicator of changes of energetic structure op aromatic hydrocarbons. Journal of Non-Crystalline Solids, 90 (1) 653-656 doi:10.1016/s0022-3093(87)80508-2
	Kovalskij, P.N., Kravciv, N.M., Mackus, P., Lipskis, K. (1987) Photoelectric and photodielectric properties of amorphous 4-nitro-4-aminodiphenyl layers. Journal of Non-Crystalline Solids, 90 (1) 657-659 doi:10.1016/s0022-3093(87)80509-4
	*Kispéter, J., Horváth, L. (1987) Some physical properties of powdered milk and lactalbumin. Journal of Non-Crystalline Solids, 90 (1) 661-664 doi:10.1016/s0022-3093(87)80510-0*
	*Grigorovici, R. (1987) Closing address. Journal of Non-Crystalline Solids, 90 (1) 665-668 doi:10.1016/s0022-3093(87)80511-2*
	*(1987) Author index. Journal of Non-Crystalline Solids, 90 (1) 669-679 doi:10.1016/s0022-3093(87)80512-4*
	*(1987) Subject index. Journal of Non-Crystalline Solids, 90 (1) 680-688 doi:10.1016/s0022-3093(87)80513-6*

	*(1995, February) Journal of Non-Crystalline Solids* Vol. 181 (1) Elsevier BV**
	*(1996, February) Journal of Non-Crystalline Solids* Vol. 195 (1) Elsevier BV**
	*(1997, February) Journal of Non-Crystalline Solids* Vol. 210 (1) Elsevier BV**
	*(1998, February) Journal of Non-Crystalline Solids* Vol. 224 (1) Elsevier BV**
	*(2000, February) Journal of Non-Crystalline Solids* Vol. 262 (1) Elsevier BV**
	*(2001, February) Journal of Non-Crystalline Solids* Vol. 280 (1) Elsevier BV**
	*(2002, February) Journal of Non-Crystalline Solids* Vol. 298 (1) Elsevier BV**
	*(2003, February) Journal of Non-Crystalline Solids* Vol. 316 (1) Elsevier BV**
	*(1984, February) Journal of Non-Crystalline Solids* Vol. 63 (1) Elsevier BV**
	*(1985, February) Journal of Non-Crystalline Solids* Vol. 70 (1) Elsevier BV**
	*(1989, February) Journal of Non-Crystalline Solids* Vol. 108 (1) Elsevier BV**

(1987, February) Journal of Non-Crystalline Solids Vol. 90 (1) Elsevier BV

Contains

See Also