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Galiev, G. B., Vasiliev, A. L., Imamov, R. M., Klimov, E. A., Maltsev, P. P., Pushkarev, S. S., Presniakov, M. Yu., Trunkin, I. N. (2015) Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well”. Crystallography Reports, 60 (3) 449 doi:10.1134/s1063774515030128

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Reference TypeJournal (article/letter/editorial)
TitleErratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well”
JournalCrystallography Reports
AuthorsGaliev, G. B.Author
Vasiliev, A. L.Author
Imamov, R. M.Author
Klimov, E. A.Author
Maltsev, P. P.Author
Pushkarev, S. S.Author
Presniakov, M. Yu.Author
Trunkin, I. N.Author
Year2015 (May)Volume60
Issue3
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063774515030128Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID623303Long-form Identifiermindat:1:5:623303:1
GUID0
Full ReferenceGaliev, G. B., Vasiliev, A. L., Imamov, R. M., Klimov, E. A., Maltsev, P. P., Pushkarev, S. S., Presniakov, M. Yu., Trunkin, I. N. (2015) Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well”. Crystallography Reports, 60 (3) 449 doi:10.1134/s1063774515030128
Plain TextGaliev, G. B., Vasiliev, A. L., Imamov, R. M., Klimov, E. A., Maltsev, P. P., Pushkarev, S. S., Presniakov, M. Yu., Trunkin, I. N. (2015) Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well”. Crystallography Reports, 60 (3) 449 doi:10.1134/s1063774515030128
In(2015, May) Crystallography Reports Vol. 60 (3) Pleiades Publishing Ltd

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Galiev, G. B., Vasiliev, A. L., Imamov, R. M., Klimov, E. A., Maltsev, P. P., Pushkarev, S. S., Presniakov, M. Yu., Trunkin, I. N. (2014) Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well. Crystallography Reports, 59 (6) 900-907 doi:10.1134/s1063774514060108
Galiev, G. B., Vasiliev, A. L., Vasil’evskii, I. S., Imamov, R. M., Klimov, E. A., Klochkov, A. N., Lavruhin, D. V., Maltsev, P. P., Pushkarev, S. S., Trunkin, I. N. (2015) Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well. Crystallography Reports, 60 (3) 397-405 doi:10.1134/s1063774515030062
Galiev, G. B., Vasiliev, A. L., Vasil’evskii, I. S., Vinichenko, A. N., Klimov, E. A., Klochkov, A. N., Trunkin, I. N., Pushkarev, S. S. (2020) Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates. Crystallography Reports, 65 (3) 496-501 doi:10.1134/s1063774520030104
Trunkin, I. N., Presniakov, M. Yu., Vasiliev, A. L. (2017) Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures. Crystallography Reports, 62 (2) 265-269 doi:10.1134/s1063774517020298
Galiev, G. B., Trunkin, I. N., Klimov, E. A., Klochkov, A. N., Vasiliev, A. L., Imamov, R. M., Pushkarev, S. S., Maltsev, P. P. (2017) Epitaxial low-temperature growth of In0.5Ga0.5As films on GaAs(100) and GaAs(111)A substrates using a metamorphic buffer. Crystallography Reports, 62 (6) 947-954 doi:10.1134/s1063774517060104
Galiev, G. B., Klimov, E. A., Vasiliev, A. L., Imamov, R. M., Pushkarev, S. S., Trunkin, I. N., Maltsev, P. P. (2017) Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates. Crystallography Reports, 62 (1) 82-90 doi:10.1134/s1063774517010072
Galiev, G. B., Klimova, E. A., Pushkarev, S. S., Klochkov, A. N., Trunkin, I. N., Vasiliev, A. L., Maltsev, P. P. (2017) Low-Temperature epitaxial growth of InGaAs films on InP(100) and InP(411)A substrates. Crystallography Reports, 62 (4) 589-596 doi:10.1134/s1063774517030063
Vasil’ev, A. L., Vasil’evskii, I. S., Galiev, G. B., Imamov, R. M., Klimov, E. A., Kovalchuk, M. V., Ponomarev, D. S., Roddatis, V. V., Subbotin, I. A. (2011) Structural and electrical properties of quantum wells with nanoscale InAs inserts in In y Al1 − y As/In x Ga1 − x As heterostructures on InP substrates. Crystallography Reports, 56 (2) 298-309 doi:10.1134/s1063774511020180
Galiev, G. B., Vasil’evskii, I. S., Imamov, R. M., Klimov, E. A., Pushkarev, S. S., Subbotin, I. A. (2011) Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37–100%) grown on GaAs and InP substrates. Crystallography Reports, 56 (5) 875-879 doi:10.1134/s1063774511050105
Blagov, A. E., Galiev, G. B., Imamov, R. M., Klimov, E. A., Kondratev, O. A., Pisarevskii, Yu. V., Prosekov, P. A., Pushkarev, S. S., Seregin, A. Yu., Koval’chuk, M. V. (2017) X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well. Crystallography Reports, 62 (3) 355-363 doi:10.1134/s1063774517030026
Galiev, G. B., Klimov, E. A., Klochkov, A. N., Maltsev, P. P., Pushkarev, S. S., Zhigalina, O. M., Imamov, R. M., Kuskova, A. N., Khmelenin, D. N. (2013) Electrical and structural characteristics of metamorphic In0.38Al0.62As/In0.37Ga0.63As/In0.38Al0.62As HEMT nanoheterostructures. Crystallography Reports, 58 (6) 914-919 doi:10.1134/s1063774513060114
 
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