Galiev, G. B., Vasiliev, A. L., Vasil’evskii, I. S., Imamov, R. M., Klimov, E. A., Klochkov, A. N., Lavruhin, D. V., Maltsev, P. P., Pushkarev, S. S., Trunkin, I. N. (2015) Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well. Crystallography Reports, 60 (3) 397-405 doi:10.1134/s1063774515030062

See Also

These are possibly similar items as determined by title/reference text matching only.

	Galiev, G. B., Vasiliev, A. L., Imamov, R. M., Klimov, E. A., Maltsev, P. P., Pushkarev, S. S., Presniakov, M. Yu., Trunkin, I. N. (2015) Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well”. Crystallography Reports, 60 (3) 449 doi:10.1134/s1063774515030128
	Galiev, G. B., Vasiliev, A. L., Imamov, R. M., Klimov, E. A., Maltsev, P. P., Pushkarev, S. S., Presniakov, M. Yu., Trunkin, I. N. (2014) Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well. Crystallography Reports, 59 (6) 900-907 doi:10.1134/s1063774514060108
	Blagov, A. E., Galiev, G. B., Imamov, R. M., Klimov, E. A., Kondratev, O. A., Pisarevskii, Yu. V., Prosekov, P. A., Pushkarev, S. S., Seregin, A. Yu., Koval’chuk, M. V. (2017) X-ray analysis of multilayer In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As HEMT heterostructures with InAs nanoinsert in quantum well. Crystallography Reports, 62 (3) 355-363 doi:10.1134/s1063774517030026
	Galiev, G. B., Trunkin, I. N., Vasiliev, A. L., Vasil’evskii, I. S., Vinichenko, A. N., Klimov, E. A., Klochkov, A. N., Maltsev, P. P., Pushkarev, S. S. (2019) New Structure for Photoconductive Antennas Based on {LTG-GaAs/GaAs:Si} Superlattice on GaAs(111)A Substrate. Crystallography Reports, 64 (2) 205-211 doi:10.1134/s1063774519020111
	Galiev, G. B., Trunkin, I. N., Klimov, E. A., Klochkov, A. N., Vasiliev, A. L., Imamov, R. M., Pushkarev, S. S., Maltsev, P. P. (2017) Epitaxial low-temperature growth of In0.5Ga0.5As films on GaAs(100) and GaAs(111)A substrates using a metamorphic buffer. Crystallography Reports, 62 (6) 947-954 doi:10.1134/s1063774517060104
	Galiev, G. B., Vasil’evskii, I. S., Imamov, R. M., Klimov, E. A., Pushkarev, S. S., Subbotin, I. A. (2011) Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37–100%) grown on GaAs and InP substrates. Crystallography Reports, 56 (5) 875-879 doi:10.1134/s1063774511050105
	Galiev, G. B., Klimov, E. A., Klochkov, A. N., Maltsev, P. P., Pushkarev, S. S., Zhigalina, O. M., Imamov, R. M., Kuskova, A. N., Khmelenin, D. N. (2013) Electrical and structural characteristics of metamorphic In0.38Al0.62As/In0.37Ga0.63As/In0.38Al0.62As HEMT nanoheterostructures. Crystallography Reports, 58 (6) 914-919 doi:10.1134/s1063774513060114
	Galiev, G. B., Vasiliev, A. L., Vasil’evskii, I. S., Vinichenko, A. N., Klimov, E. A., Klochkov, A. N., Trunkin, I. N., Pushkarev, S. S. (2020) Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates. Crystallography Reports, 65 (3) 496-501 doi:10.1134/s1063774520030104
	Galiev, G. B., Pushkarev, S. S., Orekhov, A. S., Galiev, R. R., Klimov, E. A., Maltsev, P. P., Imamov, R. M. (2014) Electrophysical characteristics and structural parameters of metamorphic HEMT nanoheterostructures In0.7Al0.3As/In0.7Ga0.3As/In0.7Al0.3As containing superlattices with different numbers of periods in the metamorphic buffer. Crystallography Reports, 59 (3) 425-429 doi:10.1134/s1063774514030092
	Galiev, G. B., Pushkarev, S. S., Vasil’evskii, I. S., Klimov, E. A., Imamov, R. M., Subbotin, I. A., Pavlenko, E. S., Kvanin, A. L. (2012) Structural and electrophysical analysis of MHEMT In0.70Al0.30As/In0.75Ga0.25As nanoheterostructures with different strain distributions in metamorphic buffer. Crystallography Reports, 57 (6) 841-847 doi:10.1134/s1063774512060028
	Galiev, G. B., Klimov, E. A., Vasiliev, A. L., Imamov, R. M., Pushkarev, S. S., Trunkin, I. N., Maltsev, P. P. (2017) Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates. Crystallography Reports, 62 (1) 82-90 doi:10.1134/s1063774517010072