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Ivanov, P. A., Kon’kov, O. I., Samsonova, T. P., Potapov, A. S. (2018) 4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers. Technical Physics Letters, 44. 87-89 doi:10.1134/s1063785018020086

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Reference TypeJournal (article/letter/editorial)
Title4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers
JournalTechnical Physics Letters
AuthorsIvanov, P. A.Author
Kon’kov, O. I.Author
Samsonova, T. P.Author
Potapov, A. S.Author
Year2018 (February)Volume44
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063785018020086Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6209833Long-form Identifiermindat:1:5:6209833:5
GUID0
Full ReferenceIvanov, P. A., Kon’kov, O. I., Samsonova, T. P., Potapov, A. S. (2018) 4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers. Technical Physics Letters, 44. 87-89 doi:10.1134/s1063785018020086
Plain TextIvanov, P. A., Kon’kov, O. I., Samsonova, T. P., Potapov, A. S. (2018) 4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers. Technical Physics Letters, 44. 87-89 doi:10.1134/s1063785018020086
In(n.d.) Technical Physics Letters Vol. 44. Pleiades Publishing Ltd

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Ivanov, P. A., Potapov, A. S., Kudoyarov, M. F., Kozlovskii, M. A., Samsonova, T. P. (2018) The Influence of Heat Treatment on the Electrical Characteristics of Semi-Insulating SiC Layers Obtained by Irradiating n-SiC with High-Energy Argon Ions. Technical Physics Letters, 44. 229-231 doi:10.1134/s1063785018030197
Ivanov, P. A., Kudoyarov, M. F., Lebedeva, N. M., Il’inskaya, N. D., Samsonova, T. P. (2021) High-Voltage Avalanche 4H-SiC Diodes with a Protective Semi-Insulating Area. Technical Physics Letters, 47 (3) 275-277 doi:10.1134/s1063785021030202
Ivanov, P. A., Potapov, A. S., Grekhov, I. V. (2018) Influence of Dopant Incomplete Ionization on the Capacitance of a Reverse-Biased 4H-SiC p+−i−n+ Diode. Technical Physics, 63 (6). 928-931 doi:10.1134/s1063784218060130
Ivanov, A. M., Levinshtein, M. E., Palmour, J. W., Agarwal, A. K., Das, M. K. (2011) Forward-current-generated donor centers in high-voltage 4H-SiC based p-i-n diodes. Technical Physics Letters, 37. 911-913 doi:10.1134/s1063785011100051
Ivanov, P. A., Potapov, A. S., Lebedeva, N. M., Grekhov, I. V. (2020) Avalanche Breakdown in 4H-SiC Schottky Diodes: Reliability Aspects. Technical Physics, 65 (12) 2041-2046 doi:10.1134/s1063784220120117
Ivanov, Pavel A., Grekhov, Igor V., Potapov, Alexander S., Il'inskaya, Natalya D., Kon'kov, Oleg I., Samsonova, Tatyana P. (2013) Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes. Materials Science Forum, 740. 877-880 doi:10.4028/www.scientific.net/msf.740-742.877
Ivanov, P. A., Grekhov, I. V. (2018) Generation of High-Voltage Pulses by Sharp-Recovery SiC Drift Diodes (n-Base versus p-Base Diodes). Technical Physics, 63 (1). 86-89 doi:10.1134/s1063784218010152
Ivanov, Pavel A., Potapov, Alexander S., Samsonova, Tat'yana P. (2009) Analysis of Forward Current-Voltage Characteristics of Non-Ideal Ti/4H-SiC Schottky Barriers. Materials Science Forum, 615. 431-434 doi:10.4028/www.scientific.net/msf.615-617.431
Ivanov, P. A., Samsonova, T. P. (2008) Interfacial transformations in the a-SiC/a-Si/6H-SiC structure caused by high-temperature (1500°C) annealing. Technical Physics Letters, 34. 591-592 doi:10.1134/s1063785008070171
Grekhov, I. V., Ivanov, P. A., Konstantinov, A. O., Samsonova, T. P. (2002) On the possibility of creating a superfast-recovery silicon carbide diode. Technical Physics Letters, 28. 544-546 doi:10.1134/1.1498779
Levinshtein, M. E., Ivanov, P. A., Palmour, J. W., Agarwal, A. K., Das, M. K. (2011) Features of degradation in high-voltage 4H-SiC p-i-n diodes under the action of forward current pulses. Technical Physics Letters, 37. 347-349 doi:10.1134/s1063785011040237
 
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