登录注册
Quick Links : Mindat手册The Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
主页关于 MindatMindat手册Mindat的历史版权Who We Are联系我们于 Mindat.org刊登广告
捐赠给 MindatCorporate Sponsorship赞助板页已赞助的板页在 Mindat刊登 广告的广告商于 Mindat.org刊登广告
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
搜索矿物的性质搜索矿物的化学Mineral Visual ExplorerAdvanced Locality Search随意显示任何一 种矿物Random Locality使用minID搜索邻近产地Search Articles搜索词汇表更多搜索选项
搜索:
矿物名称:
地区产地名称:
关键字:
 
Mindat手册添加新照片Rate Photos产区编辑报告Coordinate Completion Report添加词汇表项目
Mining Companies统计会员列表Mineral MuseumsClubs & Organizations矿物展及活动The Mindat目录表设备设置The Mineral QuizTime Machine
照片搜索Photo GalleriesSearch by ColorPhoto Colour Explorer今天最新的照片昨天最新的照片用户照片相集过去每日精选照片相集Photography

Grekhov, I. V., Ivanov, P. A., Konstantinov, A. O., Samsonova, T. P. (2002) On the possibility of creating a superfast-recovery silicon carbide diode. Technical Physics Letters, 28. 544-546 doi:10.1134/1.1498779

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleOn the possibility of creating a superfast-recovery silicon carbide diode
JournalTechnical Physics Letters
AuthorsGrekhov, I. V.Author
Ivanov, P. A.Author
Konstantinov, A. O.Author
Samsonova, T. P.Author
Year2002 (July)Volume28
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1498779Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6204736Long-form Identifiermindat:1:5:6204736:8
GUID0
Full ReferenceGrekhov, I. V., Ivanov, P. A., Konstantinov, A. O., Samsonova, T. P. (2002) On the possibility of creating a superfast-recovery silicon carbide diode. Technical Physics Letters, 28. 544-546 doi:10.1134/1.1498779
Plain TextGrekhov, I. V., Ivanov, P. A., Konstantinov, A. O., Samsonova, T. P. (2002) On the possibility of creating a superfast-recovery silicon carbide diode. Technical Physics Letters, 28. 544-546 doi:10.1134/1.1498779
In(n.d.) Technical Physics Letters Vol. 28. Pleiades Publishing Ltd

See Also

These are possibly similar items as determined by title/reference text matching only.

Ivanov, M. S., Rodin, P. B., Ivanov, P. A., Grekhov, I. V. (2016) Parameters of silicon carbide diode avalanche shapers for the picosecond range. Technical Physics Letters, 42. 43-46 doi:10.1134/s1063785016010090
Grekhov, I. V., Kostina, L. S., Argunova, T. S., Belyakova, E. I., Je, J. H., Ivanov, P. A., Samsonova, T. P. (2006) Direct bonding of silicon carbide wafers with a regular relief at the interface. Technical Physics Letters, 32. 453-455 doi:10.1134/s1063785006050245
Grekhov, I. V., Rodin, P. B. (2011) Triggering of superfast ionization fronts in silicon diode structures by field-enhanced thermionic electron emission from deep centers. Technical Physics Letters, 37. 849-853 doi:10.1134/s1063785011090203
Ivanov, P. A., Potapov, A. S., Grekhov, I. V. (2018) Influence of Dopant Incomplete Ionization on the Capacitance of a Reverse-Biased 4H-SiC p+−i−n+ Diode. Technical Physics, 63 (6). 928-931 doi:10.1134/s1063784218060130
Ivanov, Pavel A., Grekhov, Igor V., Konstantinov, Andrey O., Samsonova, Tat'yana P. (2003) Reverse Current Recovery in 4H-SiC Diodes with n- and p-Base. Materials Science Forum, 433. 855-858 doi:10.4028/www.scientific.net/msf.433-436.855
Ivanov, P. A., Kon’kov, O. I., Samsonova, T. P., Potapov, A. S. (2018) 4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers. Technical Physics Letters, 44. 87-89 doi:10.1134/s1063785018020086
Filippov, V. I., Sinyanskii, V. F., Terent’ev, A. A., Yakimov, S. S., Ivanov, P. A. (1999) Gas sensitivity of silicon carbide-based diode structures. Technical Physics, 44 (2). 180-183 doi:10.1134/1.1259280
Grekhov, I. V., Lyublinskii, A. G., Belyakova, E. I. (2016) Powerful diode nanosecond current opening switch made of p-silicon (p-SOS). Technical Physics, 61 (3). 424-427 doi:10.1134/s1063784216030087
Ivanov, P. A., Grekhov, I. V. (2015) High-voltage sharp-recovery 4H:SiC drift diodes: Theoretical estimation of limiting parameters. Technical Physics, 60 (6). 897-902 doi:10.1134/s1063784215060092
Ivanov, P. A., Ignat’ev, K. I., Panteleev, V. N., Samsonova, T. P. (1997) Deep surface states on the interface between SiC and its native thermal oxide. Technical Physics Letters, 23. 798-800 doi:10.1134/1.1261806
Ivanov, P. A., Grekhov, I. V. (2018) Generation of High-Voltage Pulses by Sharp-Recovery SiC Drift Diodes (n-Base versus p-Base Diodes). Technical Physics, 63 (1). 86-89 doi:10.1134/s1063784218010152
 
and/or  
版权所有© mindat.org1993年至2026年，除了规定的地方。 Mindat.org全赖于全球数千个以上成员和支持者们的参与。
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
隐私政策 - 条款和条款细则 - 联络我们 - Report a bug/vulnerability Current server date and time: 2026.6.8 09:20:54
Go to top of page