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Kalmykov, A. E., Myasoedov, A. V., Sorokin, L. M. (2018) Asymmetry of the Defect Structure of Semipolar GaN Grown on Si(001). Technical Physics Letters, 44. 926-929 doi:10.1134/s1063785018100267

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Reference TypeJournal (article/letter/editorial)
TitleAsymmetry of the Defect Structure of Semipolar GaN Grown on Si(001)
JournalTechnical Physics Letters
AuthorsKalmykov, A. E.Author
Myasoedov, A. V.Author
Sorokin, L. M.Author
Year2018 (October)Volume44
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063785018100267Search in ResearchGate
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Mindat Ref. ID6209737Long-form Identifiermindat:1:5:6209737:2
GUID0
Full ReferenceKalmykov, A. E., Myasoedov, A. V., Sorokin, L. M. (2018) Asymmetry of the Defect Structure of Semipolar GaN Grown on Si(001). Technical Physics Letters, 44. 926-929 doi:10.1134/s1063785018100267
Plain TextKalmykov, A. E., Myasoedov, A. V., Sorokin, L. M. (2018) Asymmetry of the Defect Structure of Semipolar GaN Grown on Si(001). Technical Physics Letters, 44. 926-929 doi:10.1134/s1063785018100267
In(n.d.) Technical Physics Letters Vol. 44. Pleiades Publishing Ltd

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Kirilenko, D. A., Myasoedov, A. V., Kalmykov, A. E., Sorokin, L. M. (2023) The Effect of AlN Buffer Layer Morphology on the Structural Quality of a Semipolar GaN Layer Grown on a Si(001) Substrate, According to Transmission Electron Microscopy Data. Technical Physics Letters, 49. doi:10.1134/s1063785023900303
Sorokin, L. M., Gutkin, M. Yu., Myasoedov, A. V., Kalmykov, A. E., Bessolov, V. N., Kukushkin, S. A. (2019) Dislocation Reactions in a Semipolar Gallium Nitride Layer Grown on a Vicinal Si(001) Substrate Using Aluminum Nitride and 3C–SiC Buffer Layers. Physics of the Solid State, 61. 2316-2320 doi:10.1134/s1063783419120527
Myasoedov, A. V., Sakharov, A. V., Nikolaev, A. E., Kalmykov, A. E., Sorokin, L. M., Lundin, W. V. (2020) A TEM Study of AlN–AlGaN–GaN Multilayer Buffer Structures on Silicon Substrates. Technical Physics Letters, 46 (10) 991-995 doi:10.1134/s1063785020100119
Ratnikov, V. V., Kalmykov, A. E., Myasoedov, A. V., Kukushkin, S. A., Osipov, A. V., Sorokin, L. M. (2013) Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage. Technical Physics Letters, 39. 994-997 doi:10.1134/s1063785013110230
Bessolov, V. N., Konenkova, E. V., Kukushkin, S. A., Myasoedov, A. V., Osipov, A. V., Rodin, S. N., Shcheglov, M. P., Feoktistov, N. A. (2014) Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer. Technical Physics Letters, 40. 386-388 doi:10.1134/s1063785014050046
Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N., Shcheglov, M. P., Kibalov, D. S., Smirnov, V. K. (2018) Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate. Technical Physics Letters, 44. 525-527 doi:10.1134/s1063785018060172
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Sorokin, L. M., Kalmykov, A. E., Bessolov, V. N., Feoktistov, N. A., Osipov, A. V., Kukushkin, S. A., Veselov, N. V. (2011) Structural characterization of GaN epilayers on silicon: Effect of buffer layers. Technical Physics Letters, 37. 326-329 doi:10.1134/s1063785011040158
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