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Zolotukhin, D. S., Nechaev, D. V., Ivanov, S. V., Zhmerik, V. N. (2017) Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III-N heterostructures by molecular-beam epitaxy. Technical Physics Letters, 43. 262-266 doi:10.1134/s1063785017030130

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Reference TypeJournal (article/letter/editorial)
TitleMonitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III-N heterostructures by molecular-beam epitaxy
JournalTechnical Physics Letters
AuthorsZolotukhin, D. S.Author
Nechaev, D. V.Author
Ivanov, S. V.Author
Zhmerik, V. N.Author
Year2017 (March)Volume43
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063785017030130Search in ResearchGate
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Mindat Ref. ID6209523Long-form Identifiermindat:1:5:6209523:1
GUID0
Full ReferenceZolotukhin, D. S., Nechaev, D. V., Ivanov, S. V., Zhmerik, V. N. (2017) Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III-N heterostructures by molecular-beam epitaxy. Technical Physics Letters, 43. 262-266 doi:10.1134/s1063785017030130
Plain TextZolotukhin, D. S., Nechaev, D. V., Ivanov, S. V., Zhmerik, V. N. (2017) Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III-N heterostructures by molecular-beam epitaxy. Technical Physics Letters, 43. 262-266 doi:10.1134/s1063785017030130
In(n.d.) Technical Physics Letters Vol. 43. Pleiades Publishing Ltd

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Nechaev, D. V., Jmerik, V. N., Mizerov, A. M., Kop’ev, P. S., Ivanov, S. V. (2012) RHEED monitoring of elastic stresses during MBE growth of group III nitride heterostructures. Technical Physics Letters, 38. 443-445 doi:10.1134/s1063785012050094
Nechaev, D. V., Sitnikova, A. A., Brunkov, P. N., Ivanov, S. V., Jmerik, V. N. (2017) Stress generation and relaxation in (Al,Ga)N/6H-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy. Technical Physics Letters, 43. 443-446 doi:10.1134/s106378501705008x
Egorov, A. Yu., Zhukov, A. E., Kovsh, A. R., Ustinov, V. M., Mamutin, V. V., Ivanov, S. V., Zhmerik, V. N., Tsatsul’nikov, A. F., Bedarev, D. A., Kop’ev, P. S. (1998) GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy. Technical Physics Letters, 24. 942-944 doi:10.1134/1.1262326
Ratnikov, V. V., Nechaev, D. V., Jmerik, V. N., Ivanov, S. V. (2016) X-ray diffractometry of AlN/c-sapphire templates obtained by plasma-activated molecular beam epitaxy. Technical Physics Letters, 42. 419-422 doi:10.1134/s1063785016040234
Mamutin, V. V., Zhmerik, V. N., Shubina, T. V., Toropov, A. A., Lebedev, A. V., Vekshin, V. A., Ivanov, S. V., Kop’ev, P. S. (1998) Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge. Technical Physics Letters, 24. 467-469 doi:10.1134/1.1262149
Ratnikov, V. V., Nechaev, D. V., Myasoedov, A. V., Koshelev, O. A., Zhmerik, V. N. (2020) Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy. Technical Physics Letters, 46 (4) 389-392 doi:10.1134/s1063785020040240
Mamutin, V. V., Cherkashin, N. A., Vekshin, V. A., Zhmerik, V. N., Ivanov, S. V. (2001) Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy. Physics of the Solid State, 43. 151-156 doi:10.1134/1.1340201
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Koshelev, O A, Nechaev, D V, Sitnikova, A A, Ratnikov, V V, Ivanov, S V, Jmerik, V N (2017) Stress in (Al, Ga)N heterostructures grown on 6H-SiC and Si substrates byplasma-assisted molecular beam epitaxy. Journal of Physics: Conference Series, 917. 32018pp. doi:10.1088/1742-6596/917/3/032018
Myasoedov, A. V., Nechaev, D. V., Ratnikov, V. V., Kalmykov, A. E., Sorokin, L. M., Jmerik, V. N. (2020) An Increase of Threading Dislocations Filtering Efficiency in Al2O3 Templates with Faceted Surface Morphology During a Growth by Molecular Beam Epitaxy. Technical Physics Letters, 46 (6) 543-547 doi:10.1134/s1063785020060097
Jmerik, V. N., Mizerov, A. M., Shubina, T. V., Listoshin, S. B., Ivanov, S. V. (2007) Controlling active nitrogen flux in plasma-assisted molecular beam epitaxy of group III nitrides. Technical Physics Letters, 33. 333-336 doi:10.1134/s1063785007040189
 
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