Lutsenko, E. V., Rzheutskii, N. V., Pavlovskii, V. N., Yablonskii, G. P., Nechaev, D. V., Sitnikova, A. A., Ratnikov, V. V., Kuznetsova, Ya. V., Zhmerik, V. N., Ivanov, S. V. (2013) Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates. Physics of the Solid State, 55. 2173-2181 doi:10.1134/s106378341310020x

See Also

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	Jmerik, V. N., Mizerov, A. M., Sitnikova, A. A., Kop’ev, P. S., Ivanov, S. V., Lutsenko, E. V., Tarasuk, N. P., Rzheutskii, N. V., Yablonskii, G. P. (2010) Low-threshold 303 nm lasing in AlGaN-based multiple-quantum well structures with an asymmetric waveguide grown by plasma-assisted molecular beam epitaxy on c-sapphire. Applied Physics Letters, 96 (14). 141112pp. doi:10.1063/1.3373834
	Ratnikov, V. V., Nechaev, D. V., Myasoedov, A. V., Koshelev, O. A., Zhmerik, V. N. (2020) Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy. Technical Physics Letters, 46 (4) 389-392 doi:10.1134/s1063785020040240
	Koshelev, O A, Nechaev, D V, Sitnikova, A A, Ratnikov, V V, Ivanov, S V, Jmerik, V N (2017) Stress in (Al, Ga)N heterostructures grown on 6H-SiC and Si substrates byplasma-assisted molecular beam epitaxy. Journal of Physics: Conference Series, 917. 32018pp. doi:10.1088/1742-6596/917/3/032018
	Jmerik, V. N., Mizerov, A. M., Shubina, T. V., Toropov, A. A., Belyaev, K. G., Sitnikova, A. A., Yagovkina, M. A., Kop'ev, P. S., Lutsenko, E. V., Danilchyk, A. V., Rzheutskii, N. V., Yablonskii, G. P., Monemar, B., Ivanov, S. V. (2010) Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al2O3. physica status solidi (a), 207 (6). 1313-1317 doi:10.1002/pssa.200983612
	Koshelev, O A, Nechaev, D V, Troshkov, S I, Ratnikov, V V, Jmerik, V N, Ivanov, S V (2018) Kinetic limitations of stress relaxation and generation in GaN/AlN and AlGaN: Si/AlN heterostructures grown on c-sapphire by plasma-assisted molecular beam epitaxy. Journal of Physics: Conference Series, 1038. 12061pp. doi:10.1088/1742-6596/1038/1/012061
	Mamutin, V. V., Cherkashin, N. A., Vekshin, V. A., Zhmerik, V. N., Ivanov, S. V. (2001) Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy. Physics of the Solid State, 43. 151-156 doi:10.1134/1.1340201
	Ratnikov, V. V., Nechaev, D. V., Jmerik, V. N., Ivanov, S. V. (2016) X-ray diffractometry of AlN/c-sapphire templates obtained by plasma-activated molecular beam epitaxy. Technical Physics Letters, 42. 419-422 doi:10.1134/s1063785016040234
	Jmerik, Valentin N., Nechaev, Dmitrii V., Rouvimov, Sergey, Ratnikov, Valentin V., Kop'ev, Peter S., Rzheutski, Mikolai V., Lutsenko, Eugenii V., Yablonskii, Gennadii P., Aljohenii, Maher, Aljerwii, Abdulaziz, Alyamani, Ahmed, Ivanov, Sergey V. (2015) Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al2O3 by using flux- and temperature-modulated techniques. Journal of Materials Research, 30 (19) 2871-2880 doi:10.1557/jmr.2015.220
	Kuznetsova, N. V., Nechaev, D. V., Shmidt, N. M., Karpov, S. Yu., Rzheutskii, N. V., Zemlyakov, V. E., Kaibyshev, V. Kh., Kazantsev, D. Yu., Troshkov, S. I., Egorkin, V. I., Ber, B. Ya., Lutsenko, E. V., Ivanov, S. V., Jmerik, V. N. (2016) Solar-blind Al x Ga1–x N (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter. Technical Physics Letters, 42. 635-638 doi:10.1134/s1063785016060250
	Nechaev, D. V., Sitnikova, A. A., Brunkov, P. N., Ivanov, S. V., Jmerik, V. N. (2017) Stress generation and relaxation in (Al,Ga)N/6H-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy. Technical Physics Letters, 43. 443-446 doi:10.1134/s106378501705008x
	Zolotukhin, D. S., Nechaev, D. V., Ivanov, S. V., Zhmerik, V. N. (2017) Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III-N heterostructures by molecular-beam epitaxy. Technical Physics Letters, 43. 262-266 doi:10.1134/s1063785017030130