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Drozdov, M. N., Drozdov, Yu. N., Polkovnikov, V. N., Starikov, S. D., Yunin, P. A. (2013) A new alternative to secondary CsM+ ions for depth profiling of multilayer metal structures by secondary ion mass spectrometry. Technical Physics Letters, 39. 46-50 doi:10.1134/s1063785013010070

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Reference TypeJournal (article/letter/editorial)
TitleA new alternative to secondary CsM+ ions for depth profiling of multilayer metal structures by secondary ion mass spectrometry
JournalTechnical Physics Letters
AuthorsDrozdov, M. N.Author
Drozdov, Yu. N.Author
Polkovnikov, V. N.Author
Starikov, S. D.Author
Yunin, P. A.Author
Year2013 (January)Volume39
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063785013010070Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6208089Long-form Identifiermindat:1:5:6208089:5
GUID0
Full ReferenceDrozdov, M. N., Drozdov, Yu. N., Polkovnikov, V. N., Starikov, S. D., Yunin, P. A. (2013) A new alternative to secondary CsM+ ions for depth profiling of multilayer metal structures by secondary ion mass spectrometry. Technical Physics Letters, 39. 46-50 doi:10.1134/s1063785013010070
Plain TextDrozdov, M. N., Drozdov, Yu. N., Polkovnikov, V. N., Starikov, S. D., Yunin, P. A. (2013) A new alternative to secondary CsM+ ions for depth profiling of multilayer metal structures by secondary ion mass spectrometry. Technical Physics Letters, 39. 46-50 doi:10.1134/s1063785013010070
In(n.d.) Technical Physics Letters Vol. 39. Pleiades Publishing Ltd

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Drozdov, M. N., Drozdov, Yu. N., Pakhomov, G. L., Travkin, V. V., Yunin, P. A., Razumov, V. F. (2013) Depth profiling of fullerene-containing structures by time-of-flight secondary ion mass spectrometry. Technical Physics Letters, 39. 1097-1100 doi:10.1134/s1063785013120183
Drozdov, M. N., Drozdov, Yu. N., Lobaev, M. A., Yunin, P. A. (2018) New Cluster Secondary Ions for Quantitative Analysis of the Concentration of Boron Atoms in Diamond by Time-of-Flight Secondary-Ion Mass Spectrometry. Technical Physics Letters, 44. 297-300 doi:10.1134/s106378501804003x
Drozdov, M. N., Drozdov, Yu. N., Zakharov, N. D., Lobanov, D. N., Novikov, A. V., Yunin, P. A., Yurasov, D. V. (2014) A new approach to the diagnostics of nanoislands in Ge x Si1 − x /Si heterostructures by secondary ion mass spectrometry. Technical Physics Letters, 40. 601-605 doi:10.1134/s1063785014070190
Drozdov, M. N., Drozdov, Yu. N., Novikov, A. V., Yunin, P. A., Yurasov, D. V. (2016) Nonlinear calibration curves in secondary ion mass spectrometry for quantitative analysis of gesi heterostructures with nanoclusters. Technical Physics Letters, 42. 243-247 doi:10.1134/s1063785016030044
Drozdov, M. N., Danil’tsev, V. M., Drozdov, Yu. N., Khrykin, O. I., Yunin, P. A. (2017) Selective analysis of the elemental composition of InGaAs/GaAs nanoclusters by secondary ion mass spectrometry. Technical Physics Letters, 43. 477-480 doi:10.1134/s1063785017050170
Drozdov, M. N., Drozdov, Yu. N., Yunin, P. A., Folomin, P. I., Gritsenko, A. B., Kryukov, V. L., Kryukov, E. V. (2016) Extremely deep profiling analysis of the atomic composition of thick (>100 μm) GaAs layers within power PIN diodes by secondary ion mass spectrometry. Technical Physics Letters, 42. 783-787 doi:10.1134/s106378501608006x
Drozdov, M. N., Drozdov, Yu. N., Novikov, A. V., Yunin, P. A., Yurasov, D. V. (2018) A New Limitation of the Depth Resolution in TOF-SIMS Elemental Profiling: the Influence of a Probing Ion Beam. Technical Physics Letters, 44. 320-323 doi:10.1134/s1063785018040181
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Shengurov, V. G., Denisov, S. A., Chalkov, V. Yu., Buzynin, Yu. N., Drozdov, M. N., Buzynin, A. N., Yunin, P. A. (2015) Thin single-crystal Ge layers on 2″ Si substrates. Technical Physics Letters, 41. 36-39 doi:10.1134/s1063785015010113
 
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