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Mynbaeva, M. G., Nikolaev, A. E., Sitnikova, A. A., Zolotareva, R. V., Mynbaev, K. D. (2012) Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates. Technical Physics Letters, 38. 412-414 doi:10.1134/s1063785012050082

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Reference TypeJournal (article/letter/editorial)
TitleCollective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates
JournalTechnical Physics Letters
AuthorsMynbaeva, M. G.Author
Nikolaev, A. E.Author
Sitnikova, A. A.Author
Zolotareva, R. V.Author
Mynbaev, K. D.Author
Year2012 (May)Volume38
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063785012050082Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6207961Long-form Identifiermindat:1:5:6207961:3
GUID0
Full ReferenceMynbaeva, M. G., Nikolaev, A. E., Sitnikova, A. A., Zolotareva, R. V., Mynbaev, K. D. (2012) Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates. Technical Physics Letters, 38. 412-414 doi:10.1134/s1063785012050082
Plain TextMynbaeva, M. G., Nikolaev, A. E., Sitnikova, A. A., Zolotareva, R. V., Mynbaev, K. D. (2012) Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates. Technical Physics Letters, 38. 412-414 doi:10.1134/s1063785012050082
In(n.d.) Technical Physics Letters Vol. 38. Pleiades Publishing Ltd

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Mynbaeva, M. G., Nikolaev, A. E., Sitnikova, A. A., Mynbaev, K. D. (2013) HVPE homo-epitaxial growth of GaN on porous substrates. CrystEngComm, 15. 3640pp. doi:10.1039/c3ce27099h
Mynbaeva, M. G., Konstantinov, O. V., Mynbaev, K. D., Romanov, A. E., Sitnikova, A. A. (2006) Mechanism of misfit stress relaxation during epitaxial growth of GaN on porous SiC substrates. Technical Physics Letters, 32. 1011-1013 doi:10.1134/s1063785006120042
Mynbaeva, M., Sitnikova, A., Nikolaev, A., Vinogradova, K., Mynbaev, K., Nikolaev, V. (2013) Self-organized defect control during GaN homoepitaxial growth on nanostructured substrates. physica status solidi (c), 10 (3). 366-368 doi:10.1002/pssc.201200448
Mynbaev, K. D., Mynbaeva, M. G., Zubrilov, A. S., Seredova, N. V. (2007) Luminescent properties of GaN-based epitaxial layers and heterostructures grown on porous SiC substrates. Technical Physics Letters, 33. 83-85 doi:10.1134/s1063785007010233
Mynbaeva, M. G., Pechnikov, A. I., Sitnikova, A. A., Kirilenko, D. A., Lavrent’ev, A. A., Ivanova, E. V., Nikolaev, V. I. (2015) Large-area crystalline GaN slabs. Technical Physics Letters, 41. 246-248 doi:10.1134/s106378501503013x
Mynbaeva, M. G., Lavrent’ev, A. A., Fomin, A. V., Mynbaev, K. D., Lebedev, A. A. (2003) Magnesium outdiffusion from porous silicon carbide substrates during autodoping of gallium nitride epilayers. Technical Physics Letters, 29. 474-476 doi:10.1134/1.1589562
Mynbaeva, M. G., Mokhov, E. N., Lavrent’ev, A. A., Mynbaev, K. D. (2008) High-temperature diffusion doping of porous silicon carbide. Technical Physics Letters, 34. 731-733 doi:10.1134/s1063785008090034
Mynbaeva, M., Saddow, S. E., Melnychuk, G., Nikitina, I., Scheglov, M., Sitnikova, A., Kuznetsov, N., Mynbaev, K., Dmitriev, V. (2001) Chemical vapor deposition of 4H–SiC epitaxial layers on porous SiC substrates. Applied Physics Letters, 78 (1). 117-119 doi:10.1063/1.1337628
Kirilenko, D. A., Sitnikova, A. A., Kremleva, A. V., Mynbaeva, M. G., Nikolaev, V. I. (2014) Analysis of stacking faults in gallium nitride by Fourier transform of high-resolution images. Technical Physics Letters, 40. 1117-1120 doi:10.1134/s106378501412027x
Mynbaeva, M., Titkov, A., Kryganovskii, A., Ratnikov, V., Mynbaev, K., Huhtinen, H., Laiho, R., Dmitriev, V. (2000) Structural characterization and strain relaxation in porous GaN layers. Applied Physics Letters, 76 (9). 1113-1115 doi:10.1063/1.125955
Mynbaeva, M., Sitnikova, A., Tregubova, A., Mynbaev, K. (2007) HVPE GaN growth on porous SiC with closed surface porosity. Journal of Crystal Growth, 303 (2). 472-479 doi:10.1016/j.jcrysgro.2006.12.041
 
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