Mynbaeva, M. G., Mokhov, E. N., Lavrent’ev, A. A., Mynbaev, K. D. (2008) High-temperature diffusion doping of porous silicon carbide. Technical Physics Letters, 34. 731-733 doi:10.1134/s1063785008090034

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Reference Type	Journal (article/letter/editorial)
Title	High-temperature diffusion doping of porous silicon carbide
Journal	Technical Physics Letters
Authors	Mynbaeva, M. G.		Author
	Mokhov, E. N.		Author
	Lavrent’ev, A. A.		Author
	Mynbaev, K. D.		Author
Year	2008 (September)	Volume	34
Publisher	Pleiades Publishing Ltd
DOI	doi:10.1134/s1063785008090034Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	6206760	Long-form Identifier	mindat:1:5:6206760:9
GUID	0
Full Reference	Mynbaeva, M. G., Mokhov, E. N., Lavrent’ev, A. A., Mynbaev, K. D. (2008) High-temperature diffusion doping of porous silicon carbide. Technical Physics Letters, 34. 731-733 doi:10.1134/s1063785008090034
Plain Text	Mynbaeva, M. G., Mokhov, E. N., Lavrent’ev, A. A., Mynbaev, K. D. (2008) High-temperature diffusion doping of porous silicon carbide. Technical Physics Letters, 34. 731-733 doi:10.1134/s1063785008090034
In	(n.d.) Technical Physics Letters Vol. 34. Pleiades Publishing Ltd

	*Pankratov, E. L., Mynbaeva, M. G., Mokhov, E. N., Mynbaev, K. D. (2011) Diffusion in porous silicon carbide. Physics of the Solid State, 53. 943-949 doi:10.1134/s1063783411050222*
	Mynbaeva, M. G., Lavrent’ev, A. A., Fomin, A. V., Mynbaev, K. D., Lebedev, A. A. (2003) Magnesium outdiffusion from porous silicon carbide substrates during autodoping of gallium nitride epilayers. Technical Physics Letters, 29. 474-476 doi:10.1134/1.1589562
	Mynbaev, K. D., Mynbaeva, M. G., Zubrilov, A. S., Seredova, N. V. (2007) Luminescent properties of GaN-based epitaxial layers and heterostructures grown on porous SiC substrates. Technical Physics Letters, 33. 83-85 doi:10.1134/s1063785007010233
	Mynbaeva, M. G., Konstantinov, O. V., Mynbaev, K. D., Romanov, A. E., Sitnikova, A. A. (2006) Mechanism of misfit stress relaxation during epitaxial growth of GaN on porous SiC substrates. Technical Physics Letters, 32. 1011-1013 doi:10.1134/s1063785006120042
	Mynbaeva, M. G., Nikolaev, A. E., Sitnikova, A. A., Zolotareva, R. V., Mynbaev, K. D. (2012) Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates. Technical Physics Letters, 38. 412-414 doi:10.1134/s1063785012050082
	Bazhenov, N. L., Mynbaeva, M. G., Mynbaev, K. D. (2012) Analysis of photoconductivity spectra with a strongly delayed photoresponse. Technical Physics, 57 (9). 1300-1303 doi:10.1134/s106378421209006x
	Mynbaeva, M. G., Pechnikov, A. I., Sitnikova, A. A., Kirilenko, D. A., Lavrent’ev, A. A., Ivanova, E. V., Nikolaev, V. I. (2015) Large-area crystalline GaN slabs. Technical Physics Letters, 41. 246-248 doi:10.1134/s106378501503013x
	*Mynbaeva, M. G. (2010) New approach to rapid characterization of single-crystalline silicon carbide. Technical Physics Letters, 36. 80-82 doi:10.1134/s1063785010010256*
	*Mynbaeva, M. G., Nikolaev, A. E., Sitnikova, A. A., Mynbaev, K. D. (2013) HVPE homo-epitaxial growth of GaN on porous substrates. CrystEngComm, 15. 3640pp. doi:10.1039/c3ce27099h*
	Baranov, P. G., Ilyin, I. V., Mokhov, E. N., Pevtsov, A. B., Khramtsov, V. A. (1999) Erbium in silicon carbide crystals: EPR and high-temperature luminescence. Physics of the Solid State, 41. 32-34 doi:10.1134/1.1130723
	Mokhov, D. V., Berezovskaya, T. N., Kuzmenkov, A. G., Maleev, N. A., Timoshnev, S. N., Ustinov, V. M. (2017) Precision calibration of the silicon doping level in gallium arsenide epitaxial layers. Technical Physics Letters, 43. 909-911 doi:10.1134/s1063785017100091

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Mynbaeva, M. G., Mokhov, E. N., Lavrent’ev, A. A., Mynbaev, K. D. (2008) High-temperature diffusion doping of porous silicon carbide. Technical Physics Letters, 34. 731-733 doi:10.1134/s1063785008090034

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