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Korol’kov, V. I., Rozhkov, A. V., Petropavlovskaya, L. A. (2001) High-voltage GaAs diodes with subnanosecond gate voltage recovery. Technical Physics Letters, 27. 731-733 doi:10.1134/1.1405242

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Reference TypeJournal (article/letter/editorial)
TitleHigh-voltage GaAs diodes with subnanosecond gate voltage recovery
JournalTechnical Physics Letters
AuthorsKorol’kov, V. I.Author
Rozhkov, A. V.Author
Petropavlovskaya, L. A.Author
Year2001 (September)Volume27
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1405242Search in ResearchGate
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Mindat Ref. ID6204445Long-form Identifiermindat:1:5:6204445:9
GUID0
Full ReferenceKorol’kov, V. I., Rozhkov, A. V., Petropavlovskaya, L. A. (2001) High-voltage GaAs diodes with subnanosecond gate voltage recovery. Technical Physics Letters, 27. 731-733 doi:10.1134/1.1405242
Plain TextKorol’kov, V. I., Rozhkov, A. V., Petropavlovskaya, L. A. (2001) High-voltage GaAs diodes with subnanosecond gate voltage recovery. Technical Physics Letters, 27. 731-733 doi:10.1134/1.1405242
In(n.d.) Technical Physics Letters Vol. 27. Pleiades Publishing Ltd

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Brylevskii, V. I., Smirnova, I. A., Rodin, P. B., Grekhov, I. V. (2014) Subnanosecond avalanche switching in high-voltage silicon diodes with abrupt and graded p-n junctions. Technical Physics Letters, 40. 357-360 doi:10.1134/s1063785014040166
Ivanov, M. S., Rozhkov, A. V., Rodin, P. B. (2023) Collapsing Gunn Domains as a Mechanism of Self-Supporting Conducting State in Reversely Biased High-Voltage GaAs Diodes. Technical Physics Letters, 49. doi:10.1134/s1063785023900273
Brylevskii, V. I., Rozhkov, A. V., Smirnova, I. A., Rodin, P. B., Grekhov, I. V. (2015) Anomalous dynamics of the residual voltage across a gallium-arsenide diode upon subnanosecond avalanche switching. Technical Physics Letters, 41. 307-309 doi:10.1134/s1063785015040045
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Grekhov, I. V., Rozhkov, A. V., Kostina, L. S., Konovalov, A. V., Fomenko, Yu. L. (2013) High-voltage field-controlled integrated thyristor. Technical Physics, 58 (1). 100-104 doi:10.1134/s1063784213010088
Ivanov, P. A., Grekhov, I. V. (2015) High-voltage sharp-recovery 4H:SiC drift diodes: Theoretical estimation of limiting parameters. Technical Physics, 60 (6). 897-902 doi:10.1134/s1063784215060092
Ivanov, P. A., Grekhov, I. V. (2018) Generation of High-Voltage Pulses by Sharp-Recovery SiC Drift Diodes (n-Base versus p-Base Diodes). Technical Physics, 63 (1). 86-89 doi:10.1134/s1063784218010152
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