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Korol’, E. B., Kikkarin, S. M. (2000) Effect of annealing in various atmospheres on the photoluminescence of porous silicon. Technical Physics Letters, 26. 223-224 doi:10.1134/1.1262798

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Reference TypeJournal (article/letter/editorial)
TitleEffect of annealing in various atmospheres on the photoluminescence of porous silicon
JournalTechnical Physics Letters
AuthorsKorol’, E. B.Author
Kikkarin, S. M.Author
Year2000 (March)Volume26
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1262798Search in ResearchGate
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Mindat Ref. ID6203904Long-form Identifiermindat:1:5:6203904:0
GUID0
Full ReferenceKorol’, E. B., Kikkarin, S. M. (2000) Effect of annealing in various atmospheres on the photoluminescence of porous silicon. Technical Physics Letters, 26. 223-224 doi:10.1134/1.1262798
Plain TextKorol’, E. B., Kikkarin, S. M. (2000) Effect of annealing in various atmospheres on the photoluminescence of porous silicon. Technical Physics Letters, 26. 223-224 doi:10.1134/1.1262798
In(n.d.) Technical Physics Letters Vol. 26. Pleiades Publishing Ltd

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Kostishko, B. M., Puzov, I. P., Nagornov, Yu. S. (2000) Stabilization of luminous properties of porous silicon by vacuum annealing at high temperatures. Technical Physics Letters, 26. 26-28 doi:10.1134/1.1262728
Kostishko, B. M., Nagornov, Yu. S. (2001) The mechanism of photoluminescence quenching in porous silicon by electron irradiation of various intensity. Technical Physics Letters, 27. 827-829 doi:10.1134/1.1414447
Kostishko, B. M., Atazhanov, Sh. R., Puzov, I. P., Solomatin, S. Ya., Nagornov, Yu. S. (2000) Heterogeneous effect in carbonized porous silicon. Technical Physics Letters, 26. 199-201 doi:10.1134/1.1262790
Len’shin, A. S., Kashkarov, V. M., Turishchev, S. Yu., Smirnov, M. S., Domashevskaya, E. P. (2011) Effect of natural aging on photoluminescence of porous silicon. Technical Physics Letters, 37. 789-792 doi:10.1134/s1063785011090124
Kostishko, B. M., Drozdov, A. V., Shibaev, P. V., Kostishko, A. E. (2000) Argon-oxygen ion-plasma treatment modifies the surface composition and photoluminescence spectrum of porous silicon. Technical Physics Letters, 26. 919-922 doi:10.1134/1.1321239
Piryatinskii, Yu. P., Klyui, N. I., Rozhin, A. G. (2000) Photoluminescence of porous silicon layers formed in ion-implanted silicon wafers. Technical Physics Letters, 26. 944-946 doi:10.1134/1.1329678
Tutov, E. A., Andryukov, A. Yu., Ryabtsev, S. V. (2000) Nonequilibrium processes in capacitive sensors based on porous silicon. Technical Physics Letters, 26. 778-780 doi:10.1134/1.1315491
Kostishko, B. M., Nagornov, Yu. S., Salomatin, S. Ya., Atazhanov, Sh. R. (2004) The interface mechanism of photoluminescence in carbonized porous silicon. Technical Physics Letters, 30. 88-90 doi:10.1134/1.1666948
Zimin, S. P., Komarov, E. P. (1998) Influence of short-term annealing on the conductivity of porous silicon and the transition resistivity of an aluminum-porous silicon contact. Technical Physics Letters, 24. 226-228 doi:10.1134/1.1262063
Kostishko, B. M., Atazhanov, Sh. R., Mikov, S. N. (1998) Photoluminescence and degradation properties of carbonized porous silicon. Technical Physics Letters, 24. 633-635 doi:10.1134/1.1262225
Grevtsov, N. L., Chubenko, E. B., Bondarenko, V. P., Gavrilin, I. M., Dronov, A. A., Gavrilov, S. A. (2021) The Effect of Porous Silicon Oxidation on Electrochemical Formation of Porous Silicon–Indium Nanocomposites. Technical Physics Letters, 47 (4) 341-343 doi:10.1134/s1063785021040088
 
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