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Kostishko, B. M., Nagornov, Yu. S. (2001) The mechanism of photoluminescence quenching in porous silicon by electron irradiation of various intensity. Technical Physics Letters, 27. 827-829 doi:10.1134/1.1414447

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Reference TypeJournal (article/letter/editorial)
TitleThe mechanism of photoluminescence quenching in porous silicon by electron irradiation of various intensity
JournalTechnical Physics Letters
AuthorsKostishko, B. M.Author
Nagornov, Yu. S.Author
Year2001 (October)Volume27
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1414447Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6204150Long-form Identifiermindat:1:5:6204150:4
GUID0
Full ReferenceKostishko, B. M., Nagornov, Yu. S. (2001) The mechanism of photoluminescence quenching in porous silicon by electron irradiation of various intensity. Technical Physics Letters, 27. 827-829 doi:10.1134/1.1414447
Plain TextKostishko, B. M., Nagornov, Yu. S. (2001) The mechanism of photoluminescence quenching in porous silicon by electron irradiation of various intensity. Technical Physics Letters, 27. 827-829 doi:10.1134/1.1414447
In(n.d.) Technical Physics Letters Vol. 27. Pleiades Publishing Ltd

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Kostishko, B. M., Nagornov, Yu. S., Salomatin, S. Ya., Atazhanov, Sh. R. (2004) The interface mechanism of photoluminescence in carbonized porous silicon. Technical Physics Letters, 30. 88-90 doi:10.1134/1.1666948
Kostishko, B. M., Nagornov, Yu. S. (2001) Water after-etching of n-type porous silicon in an electric field. Technical Physics, 46 (7). 847-852 doi:10.1134/1.1387545
Kostishko, B. M., Puzov, I. P., Nagornov, Yu. S. (2000) Stabilization of luminous properties of porous silicon by vacuum annealing at high temperatures. Technical Physics Letters, 26. 26-28 doi:10.1134/1.1262728
Kostishko, B. M., Atazhanov, Sh. R., Puzov, I. P., Solomatin, S. Ya., Nagornov, Yu. S. (2000) Heterogeneous effect in carbonized porous silicon. Technical Physics Letters, 26. 199-201 doi:10.1134/1.1262790
Kostishko, B. M., Orlov, A. M., Frolov, V. A. (1997) Activation energy of electron-stimulated quenching of the photoluminescence of n-type porous silicon. Technical Physics Letters, 23. 714-716 doi:10.1134/1.1261665
Kostishko, B. M., Nagornov, Yu. S., Atazhanov, Sh. R., Mikov, S. N. (2002) The features of photoluminescence from nanograins of gallium-doped cubic silicon carbide. Technical Physics Letters, 28. 743-745 doi:10.1134/1.1511771
Kostishko, B. M., Orlov, A. M. (1998) Influence of successive electron and laser irradiation on the photoluminescence of porous silicon. Technical Physics, 43 (3). 318-322 doi:10.1134/1.1258917
Nagornov, Yu. S., Kostishko, B. M., Mikov, S. N., Atazhanov, Sh. R., Zolotov, A. V., Pchelintseva, E. S. (2007) Formation of silicon carbide nanocrystals by high-temperature carbonization of porous silicon. Technical Physics, 52 (8). 1093-1097 doi:10.1134/s1063784207080221
Kostishko, B. M., Atazhanov, Sh. R., Mikov, S. N. (1998) Photoluminescence and degradation properties of carbonized porous silicon. Technical Physics Letters, 24. 633-635 doi:10.1134/1.1262225
Kostishko, B. M., Drozdov, A. V., Shibaev, P. V., Kostishko, A. E. (2000) Argon-oxygen ion-plasma treatment modifies the surface composition and photoluminescence spectrum of porous silicon. Technical Physics Letters, 26. 919-922 doi:10.1134/1.1321239
Kostishko, B. M., Appolonov, S. V., Salomatin, S. Ya., Kostishko, A. E. (2004) Peculiarities of the oxidation of porous silicon during aqueous after-etching. Technical Physics Letters, 30. 259-261 doi:10.1134/1.1748593
 
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