Katerinchuk, V. N., Kovalyuk, Z. D., Kaminskii, V. M. (2000) p-GaSe-n-recrystallized InSe heterojunctions. Technical Physics Letters, 26. 54-55 doi:10.1134/1.1262739

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Reference Type	Journal (article/letter/editorial)
Title	p-GaSe-n-recrystallized InSe heterojunctions
Journal	Technical Physics Letters
Authors	Katerinchuk, V. N.		Author
	Kovalyuk, Z. D.		Author
	Kaminskii, V. M.		Author
Year	2000 (January)	Volume	26
Publisher	Pleiades Publishing Ltd
DOI	doi:10.1134/1.1262739Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	6203759	Long-form Identifier	mindat:1:5:6203759:2
GUID	0
Full Reference	Katerinchuk, V. N., Kovalyuk, Z. D., Kaminskii, V. M. (2000) p-GaSe-n-recrystallized InSe heterojunctions. Technical Physics Letters, 26. 54-55 doi:10.1134/1.1262739
Plain Text	Katerinchuk, V. N., Kovalyuk, Z. D., Kaminskii, V. M. (2000) p-GaSe-n-recrystallized InSe heterojunctions. Technical Physics Letters, 26. 54-55 doi:10.1134/1.1262739
In	(n.d.) Technical Physics Letters Vol. 26. Pleiades Publishing Ltd

	Katerinchuk, V. N., Kovalyuk, Z. D., Betsa, T. V., Kaminskii, V. M., Netyaga, V. V. (2001) Oxide-p-InSe heterojunctions on (110)-oriented InSe crystal substrates. Technical Physics Letters, 27. 424-426 doi:10.1134/1.1376772
	*Katerinchuk, V. N., Kovalyuk, Z. D., Netyaga, V. V., Betsa, T. V. (2000) Photoelectric properties of the n-SnSSe-p-InSe heterojunctions. Technical Physics Letters, 26. 754-756 doi:10.1134/1.1315484*
	*Katerinchuk, V. N., Kovalyuk, M. Z. (1999) Gallium telluride heterojunctions. Technical Physics Letters, 25. 54-55 doi:10.1134/1.1262353*
	Katerinchuk, V. N., Kudrynskyi, Z. R., Kovalyuk, Z. D. (2014) Spectral anisotropy of a photoresponse from heterojunctions based on GaSe and InSe layered crystals. Technical Physics, 59 (3). 407-410 doi:10.1134/s1063784214030141
	*Katerinchuk, V. N., Kovalyuk, M. Z. (1997) Photopleochroism of oxide-p-InSe diode structures. Technical Physics Letters, 23. 377 doi:10.1134/1.1261674*
	Katerinchuk, V. N., Kovalyuk, Z. D., Zaslonkin, A. V. (1999) Influence of self-oxide formation regimes on the properties of oxide-p-InSe heterojunctions. Technical Physics Letters, 25. 520-521 doi:10.1134/1.1262539
	*Kovalyuk, M. Z., Vitkovskaya, V. I., Tovarnitskii, M. V. (1997) p-GaSe-n-Ga2S3 heterojunctions. Technical Physics Letters, 23. 385 doi:10.1134/1.1261689*
	*Kudrynskyi, Z. R., Kovalyuk, Z. D. (2014) Photosensitive anisotype n-ZnSe/p-InSe and n-ZnSe/p-GaSe heterojunctions. Technical Physics, 59 (8). 1205-1208 doi:10.1134/s106378421408012x*
	*Katerinchuk, V. N., Kovalyuk, M. Z. (1992) InSe p-n Homojunction Diodes. physica status solidi (a), 133 (1). doi:10.1002/pssa.2211330128*
	*Drapak, S. I., Netyaga, V. V., Kovalyuk, Z. D. (2002) The electrical and photoelectrical properties of n-In2Se3-p-InSe heterostructures. Technical Physics Letters, 28. 711-713 doi:10.1134/1.1511762*
	Katerinchuk, V. N., Kovalyuk, Z. D. (1983) Peculiarities of the photoconductivity of GaSe single crystals in the fundamental absorption edge region. Soviet Physics Journal, 26. 1018-1020 doi:10.1007/bf00896664

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Katerinchuk, V. N., Kovalyuk, Z. D., Kaminskii, V. M. (2000) p-GaSe-n-recrystallized InSe heterojunctions. Technical Physics Letters, 26. 54-55 doi:10.1134/1.1262739

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