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Kovalyuk, M. Z., Vitkovskaya, V. I., Tovarnitskii, M. V. (1997) p-GaSe-n-Ga2S3 heterojunctions. Technical Physics Letters, 23. 385 doi:10.1134/1.1261689

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Reference TypeJournal (article/letter/editorial)
Titlep-GaSe-n-Ga2S3 heterojunctions
JournalTechnical Physics Letters
AuthorsKovalyuk, M. Z.Author
Vitkovskaya, V. I.Author
Tovarnitskii, M. V.Author
Year1997 (May)Volume23
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1261689Search in ResearchGate
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Mindat Ref. ID6202827Long-form Identifiermindat:1:5:6202827:5
GUID0
Full ReferenceKovalyuk, M. Z., Vitkovskaya, V. I., Tovarnitskii, M. V. (1997) p-GaSe-n-Ga2S3 heterojunctions. Technical Physics Letters, 23. 385 doi:10.1134/1.1261689
Plain TextKovalyuk, M. Z., Vitkovskaya, V. I., Tovarnitskii, M. V. (1997) p-GaSe-n-Ga2S3 heterojunctions. Technical Physics Letters, 23. 385 doi:10.1134/1.1261689
In(n.d.) Technical Physics Letters Vol. 23. Pleiades Publishing Ltd

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Katerinchuk, V. N., Kovalyuk, Z. D., Kaminskii, V. M. (2000) p-GaSe-n-recrystallized InSe heterojunctions. Technical Physics Letters, 26. 54-55 doi:10.1134/1.1262739
Katerinchuk, V. N., Kovalyuk, M. Z. (1997) Photopleochroism of oxide-p-InSe diode structures. Technical Physics Letters, 23. 377 doi:10.1134/1.1261674
Katerinchuk, V. N., Kovalyuk, M. Z. (1999) Gallium telluride heterojunctions. Technical Physics Letters, 25. 54-55 doi:10.1134/1.1262353
Katerinchuk, V. N., Kovalyuk, Z. D., Betsa, T. V., Kaminskii, V. M., Netyaga, V. V. (2001) Oxide-p-InSe heterojunctions on (110)-oriented InSe crystal substrates. Technical Physics Letters, 27. 424-426 doi:10.1134/1.1376772
Kudrynskyi, Z. R., Kovalyuk, Z. D. (2014) Photosensitive anisotype n-ZnSe/p-InSe and n-ZnSe/p-GaSe heterojunctions. Technical Physics, 59 (8). 1205-1208 doi:10.1134/s106378421408012x
Drapak, S. I., Kovalyuk, Z. D., Netyaga, V. V., Orletskii, V. B. (2002) On the mechanisms of current transfer in n-In2Se3-p-GaSe heterostructures. Technical Physics Letters, 28. 707-710 doi:10.1134/1.1511761
Katerinchuk, V. N., Kovalyuk, Z. D., Netyaga, V. V., Betsa, T. V. (2000) Photoelectric properties of the n-SnSSe-p-InSe heterojunctions. Technical Physics Letters, 26. 754-756 doi:10.1134/1.1315484
Drapak, S. I., Manasson, V. A., Netyaga, V. V., Kovalyuk, Z. D. (2002) Negative differential conductivity in a p +-Bi2Te3-p-GaSe isotype heterostructure. Technical Physics Letters, 28. 660-663 doi:10.1134/1.1505542
Katerinchuk, V. N., Kudrynskyi, Z. R., Kovalyuk, Z. D. (2014) Spectral anisotropy of a photoresponse from heterojunctions based on GaSe and InSe layered crystals. Technical Physics, 59 (3). 407-410 doi:10.1134/s1063784214030141
Zaslonkin, A. V., Kaminskii, V. M., Kovalyuk, Z. D., Mintyanskii, I. V., Tovarnitskii, M. V. (2006) Electrical properties of hydrogenated InSe crystals. Inorganic Materials, 42 (12) 1308-1310 doi:10.1134/s0020168506120053
Katerinchuk, V. N., Kovalyuk, Z. D., Zaslonkin, A. V. (1999) Influence of self-oxide formation regimes on the properties of oxide-p-InSe heterojunctions. Technical Physics Letters, 25. 520-521 doi:10.1134/1.1262539
 
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