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Sobolev, M. M., Nikitin, V. G. (1998) High-temperature diode formed by epitaxial GaP layers. Technical Physics Letters, 24. 329-331 doi:10.1134/1.1262110

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Reference TypeJournal (article/letter/editorial)
TitleHigh-temperature diode formed by epitaxial GaP layers
JournalTechnical Physics Letters
AuthorsSobolev, M. M.Author
Nikitin, V. G.Author
Year1998 (May)Volume24
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1262110Search in ResearchGate
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Mindat Ref. ID6203208Long-form Identifiermindat:1:5:6203208:3
GUID0
Full ReferenceSobolev, M. M., Nikitin, V. G. (1998) High-temperature diode formed by epitaxial GaP layers. Technical Physics Letters, 24. 329-331 doi:10.1134/1.1262110
Plain TextSobolev, M. M., Nikitin, V. G. (1998) High-temperature diode formed by epitaxial GaP layers. Technical Physics Letters, 24. 329-331 doi:10.1134/1.1262110
In(n.d.) Technical Physics Letters Vol. 24. Pleiades Publishing Ltd

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Botnaryuk, V. M., Zhilyaev, Yu. V., Ivanov, A. M., Strokan, N. B., Fedorov, L. M. (1998) Behavior of epitaxial GaAs layers as α particle detectors. Technical Physics Letters, 24. 250-253 doi:10.1134/1.1262073
Vekshin, M. M., Nikitin, V. A., Yakovlenko, N. A. (1998) Polarization properties of a four-layer dielectric waveguide. Technical Physics Letters, 24. 222-223 doi:10.1134/1.1262061
Dubrovskii, V. G., Cirlin, G. É., Bauman, D. A., Kozachek, V. V., Mareev, V. V. (1998) Spontaneous formation of arrays of three-dimensional islands in epitaxial layers. Technical Physics Letters, 24. 507-509 doi:10.1134/1.1262172
Myagkov, V. G., Bykova, L. E., Bondarenko, G. N. (2006) Epitaxial B2-NiAl layers formed by nanosecond laser irradiation of thin Al/Ni bilayers. Technical Physics Letters, 32. 827-830 doi:10.1134/s1063785006100026
Makhnii, E. V., Sletov, M. M. (2000) High-temperature edge luminescence from cubic cadmium selenide layers. Technical Physics Letters, 26. 787-788 doi:10.1134/1.1315494
Alekseev, S. B., Gubanov, V. P., Orlovskii, V. M., Tarasenko, V. F. (2004) Subnanosecond electron beams formed in a gas-filled diode at high pressures. Technical Physics Letters, 30. 859-861 doi:10.1134/1.1813732
Vlasov, A. P., Monastyrskii, L. S., Sokolovskii, B. S., Il’chuk, G. A. (2004) The effect of internal electric field on the high-temperature diffusion of arsenic in variable-gap epitaxial CdHgTe layers. Technical Physics Letters, 30. 970-972 doi:10.1134/1.1829359
Tarasenko, V. F., Shpak, V. G., Shunailov, S. A., Yalandin, M. I., Orlovskii, V. M., Alekseev, S. B. (2003) Subnanosecond electron beams formed in a gas-filled diode. Technical Physics Letters, 29. 879-881 doi:10.1134/1.1631351
Loginov, M. V., Shrednik, V. N. (1998) On the nature of the surface phases formed on carbidized tungsten during field evaporation. Technical Physics Letters, 24. 432-435 doi:10.1134/1.1262163
Usikov, A. S., Tret’yakov, V. V., Lundin, V. V., Zadiranov, Yu. M., Pushnyi, B. V., Konnikov, S. G. (1999) Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence. Technical Physics Letters, 25. 253-256 doi:10.1134/1.1262443
Glushchenko, A. G., Golovkina, M. V. (1998) Reflection of an electromagnetic wave by a layered superconductor-dielectric structure. Technical Physics Letters, 24. 4-5 doi:10.1134/1.1261970
 
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