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Talanin, V. I., Talanin, I. E. (2016) Complex formation in semiconductor silicon within the framework of the Vlasov model of a solid state. Physics of the Solid State, 58. 2050-2054 doi:10.1134/s1063783416100371

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Reference TypeJournal (article/letter/editorial)
TitleComplex formation in semiconductor silicon within the framework of the Vlasov model of a solid state
JournalPhysics of the Solid State
AuthorsTalanin, V. I.Author
Talanin, I. E.Author
Year2016 (October)Volume58
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063783416100371Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6156486Long-form Identifiermindat:1:5:6156486:8
GUID0
Full ReferenceTalanin, V. I., Talanin, I. E. (2016) Complex formation in semiconductor silicon within the framework of the Vlasov model of a solid state. Physics of the Solid State, 58. 2050-2054 doi:10.1134/s1063783416100371
Plain TextTalanin, V. I., Talanin, I. E. (2016) Complex formation in semiconductor silicon within the framework of the Vlasov model of a solid state. Physics of the Solid State, 58. 2050-2054 doi:10.1134/s1063783416100371
In(n.d.) Physics of the Solid State Vol. 58. Pleiades Publishing Ltd

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Talanin, V. I., Talanin, I. E. (2016) Diffusion model of the formation of growth microdefects: A new approach to defect formation in crystals (Review). Physics of the Solid State, 58. 427-437 doi:10.1134/s106378341603029x
Talanin, V. I., Talanin, I. E. (2013) Diffusion model of the formation of growth microdefects as applied to the description of defect formation in heat-treated silicon single crystals. Physics of the Solid State, 55. 282-287 doi:10.1134/s1063783413020327
Talanin, V. I., Talanin, I. E. (2010) Kinetics of high-temperature precipitation in dislocation-free silicon single crystals. Physics of the Solid State, 52. 2063-2069 doi:10.1134/s1063783410100094
Talanin, V. I., Talanin, I. E. (2010) Kinetics of formation of vacancy microvoids and interstitial dislocation loops in dislocation-free silicon single crystals. Physics of the Solid State, 52. 1880-1886 doi:10.1134/s1063783410090155
Talanin, V. I., Talanin, I. E. (2007) On the recombination of intrinsic point defects in dislocation-free silicon single crystals. Physics of the Solid State, 49. 467-471 doi:10.1134/s1063783407030134
Talanin, V. I., Talanin, I. E. (2022) High-Temperature Precipitation of Impurities in Metals. Physics of the Solid State, 64 (6) 340-346 doi:10.1134/s1063783422070101
Talanin, V. I., Talanin, I. E. (2011) Kinetic model of growth and coalescence of oxygen and carbon precipitates during cooling of As-grown silicon crystals. Physics of the Solid State, 53. 119-126 doi:10.1134/s1063783411010318
Talanin, V. I., Talanin, I. E. (2014) On the problem of the consistency of the high-temperature precipitation model with the classical nucleation theory. Physics of the Solid State, 56. 2043-2049 doi:10.1134/s1063783414100291
Talanin, V. I., Talanin, I. E. (2019) High-Temperature Precipitation of Impurities within the Vlasov Model for Solids. Crystallography Reports, 64 (4) 581-585 doi:10.1134/s1063774519040230
Talanin, V. I., Talanin, I. E., Levinzon, D. I. (2004) Formation of microdefects in semiconductor silicon. Crystallography Reports, 49 (2) 188-192 doi:10.1134/1.1690413
Talanin, V. I., Talanin, I. E. (2010) Modeling of defect formation processes in dislocation-free silicon single crystals. Crystallography Reports, 55 (4) 632-637 doi:10.1134/s1063774510040164
 
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