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Talanin, V. I., Talanin, I. E. (2010) Kinetics of high-temperature precipitation in dislocation-free silicon single crystals. Physics of the Solid State, 52. 2063-2069 doi:10.1134/s1063783410100094

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Reference TypeJournal (article/letter/editorial)
TitleKinetics of high-temperature precipitation in dislocation-free silicon single crystals
JournalPhysics of the Solid State
AuthorsTalanin, V. I.Author
Talanin, I. E.Author
Year2010 (October)Volume52
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063783410100094Search in ResearchGate
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Mindat Ref. ID6154040Long-form Identifiermindat:1:5:6154040:6
GUID0
Full ReferenceTalanin, V. I., Talanin, I. E. (2010) Kinetics of high-temperature precipitation in dislocation-free silicon single crystals. Physics of the Solid State, 52. 2063-2069 doi:10.1134/s1063783410100094
Plain TextTalanin, V. I., Talanin, I. E. (2010) Kinetics of high-temperature precipitation in dislocation-free silicon single crystals. Physics of the Solid State, 52. 2063-2069 doi:10.1134/s1063783410100094
In(n.d.) Physics of the Solid State Vol. 52. Pleiades Publishing Ltd

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Talanin, V. I., Talanin, I. E. (2010) Kinetics of formation of vacancy microvoids and interstitial dislocation loops in dislocation-free silicon single crystals. Physics of the Solid State, 52. 1880-1886 doi:10.1134/s1063783410090155
Talanin, V. I., Talanin, I. E. (2007) On the recombination of intrinsic point defects in dislocation-free silicon single crystals. Physics of the Solid State, 49. 467-471 doi:10.1134/s1063783407030134
Talanin, V. I., Talanin, I. E. (2010) Modeling of defect formation processes in dislocation-free silicon single crystals. Crystallography Reports, 55 (4) 632-637 doi:10.1134/s1063774510040164
Talanin, V. I., Talanin, I. E. (2022) High-Temperature Precipitation of Impurities in Metals. Physics of the Solid State, 64 (6) 340-346 doi:10.1134/s1063783422070101
Talanin, V. I., Talanin, I. E., Voronin, A. A. (2008) Modeling of the defect structure in dislocation-free silicon single crystals. Crystallography Reports, 53 (7) 1124-1132 doi:10.1134/s1063774508070055
Talanin, V. I., Talanin, I. E., Ustimenko, N. Ph. (2012) Analysis and calculation of the formation of grown-in microdefects in dislocation-free silicon single crystals. Crystallography Reports, 57 (7) 898-902 doi:10.1134/s1063774512070218
Talanin, V. I., Talanin, I. E. (2014) On the problem of the consistency of the high-temperature precipitation model with the classical nucleation theory. Physics of the Solid State, 56. 2043-2049 doi:10.1134/s1063783414100291
Talanin, V. I., Talanin, I. E. (2013) Diffusion model of the formation of growth microdefects as applied to the description of defect formation in heat-treated silicon single crystals. Physics of the Solid State, 55. 282-287 doi:10.1134/s1063783413020327
Talanin, V. I., Talanin, I. E. (2016) Complex formation in semiconductor silicon within the framework of the Vlasov model of a solid state. Physics of the Solid State, 58. 2050-2054 doi:10.1134/s1063783416100371
Talanin, V. I., Talanin, I. E. (2011) Kinetic model of growth and coalescence of oxygen and carbon precipitates during cooling of As-grown silicon crystals. Physics of the Solid State, 53. 119-126 doi:10.1134/s1063783411010318
Talanin, V I, Talanin, I E, Voronin, A A (2007) About the simulation of primary grown-in microdefects in dislocation-free silicon single-crystal formation. Canadian Journal of Physics, 85. 1459-1471 doi:10.1139/p07-094
 
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