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Ratnikov, V. V., Mamutin, V. V., Vekshin, V. A., Ivanov, S. V. (2001) X-ray diffractometric study of the influence of a buffer layer on the microstructure of molecular-beam epitaxial InN layers of different thicknesses. Physics of the Solid State, 43. 949-954 doi:10.1134/1.1371383

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Reference TypeJournal (article/letter/editorial)
TitleX-ray diffractometric study of the influence of a buffer layer on the microstructure of molecular-beam epitaxial InN layers of different thicknesses
JournalPhysics of the Solid State
AuthorsRatnikov, V. V.Author
Mamutin, V. V.Author
Vekshin, V. A.Author
Ivanov, S. V.Author
Year2001 (May)Volume43
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1371383Search in ResearchGate
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Mindat Ref. ID6150596Long-form Identifiermindat:1:5:6150596:2
GUID0
Full ReferenceRatnikov, V. V., Mamutin, V. V., Vekshin, V. A., Ivanov, S. V. (2001) X-ray diffractometric study of the influence of a buffer layer on the microstructure of molecular-beam epitaxial InN layers of different thicknesses. Physics of the Solid State, 43. 949-954 doi:10.1134/1.1371383
Plain TextRatnikov, V. V., Mamutin, V. V., Vekshin, V. A., Ivanov, S. V. (2001) X-ray diffractometric study of the influence of a buffer layer on the microstructure of molecular-beam epitaxial InN layers of different thicknesses. Physics of the Solid State, 43. 949-954 doi:10.1134/1.1371383
In(n.d.) Physics of the Solid State Vol. 43. Pleiades Publishing Ltd

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Mamutin, V. V., Cherkashin, N. A., Vekshin, V. A., Zhmerik, V. N., Ivanov, S. V. (2001) Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy. Physics of the Solid State, 43. 151-156 doi:10.1134/1.1340201
Mamutin, V. V., Vekshin, V. A., Davydov, V. Yu., Ratnikov, V. V., Shubina, T. V., Ivanov, S. V., Kopev, P. S., Karlsteen, M., Söderwall, U., Willander, M. (1999) MBE Growth of Hexagonal InN Films on Sapphire with Different Initial Growth Stages. physica status solidi (a), 176 (1). 247-252 doi:10.1002/(sici)1521-396x(199911)176:1<247::aid-pssa247>3.0.co;2-i
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Shul’pina, I. L., Ratnikov, V. V., Matveev, O. A. (2001) X-ray diffraction study of changes in the CdTe monocrystal real structure induced by laser radiation. Physics of the Solid State, 43. 579-582 doi:10.1134/1.1356141
Ratnikov, V. V., Sorokin, L. M., Sokolov, V. I., Kalmykov, A. E. (2009) X-ray diffractometry and electron microscopy of porous silicon layers at different stages of oxidation in air. Physics of the Solid State, 51. 2429-2436 doi:10.1134/s1063783409120014
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Antipov, V. V., Kukushkin, S. A., Osipov, A. V., Rubets, V. P. (2018) Epitaxial Growth of Cadmium Selenide Films on Silicon with a Silicon Carbide Buffer Layer. Physics of the Solid State, 60. 504-509 doi:10.1134/s1063783418030022
Antipov, V. V., Kukushkin, S. A., Osipov, A. V. (2017) Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer. Physics of the Solid State, 59. 399-402 doi:10.1134/s1063783417020020
Ratnikov, V. V., Nechaev, D. V., Jmerik, V. N., Ivanov, S. V. (2016) X-ray diffractometry of AlN/c-sapphire templates obtained by plasma-activated molecular beam epitaxy. Technical Physics Letters, 42. 419-422 doi:10.1134/s1063785016040234
Kyutt, R. N., Ratnikov, V. V., Mosina, G. N., Shcheglov, M. P. (1999) Structural perfection of GaN epitaxial layers according to x-ray diffraction measurements. Physics of the Solid State, 41. 25-31 doi:10.1134/1.1130722
 
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