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Feinleib, J., Iwasa, S., Moss, S.C., deNeufville, J.P., Ovshinsky, S.R. (1972) Reversible optical effects in amorphous semiconductors. Journal of Non-Crystalline Solids, 8. 909-916 doi:10.1016/0022-3093(72)90246-3

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Reference TypeJournal (article/letter/editorial)
TitleReversible optical effects in amorphous semiconductors
JournalJournal of Non-Crystalline Solids
AuthorsFeinleib, J.Author
Iwasa, S.Author
Moss, S.C.Author
deNeufville, J.P.Author
Ovshinsky, S.R.Author
Year1972 (June)Volume8
PublisherElsevier BV
DOIdoi:10.1016/0022-3093(72)90246-3Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID609231Long-form Identifiermindat:1:5:609231:7
GUID0
Full ReferenceFeinleib, J., Iwasa, S., Moss, S.C., deNeufville, J.P., Ovshinsky, S.R. (1972) Reversible optical effects in amorphous semiconductors. Journal of Non-Crystalline Solids, 8. 909-916 doi:10.1016/0022-3093(72)90246-3
Plain TextFeinleib, J., Iwasa, S., Moss, S.C., deNeufville, J.P., Ovshinsky, S.R. (1972) Reversible optical effects in amorphous semiconductors. Journal of Non-Crystalline Solids, 8. 909-916 doi:10.1016/0022-3093(72)90246-3
In(1972) Journal of Non-Crystalline Solids Vol. 8. Elsevier BV

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Moss, S.C, deNeufville, J.P (1972) Thermal crystallization of selected Te-based sputtered thin films. Journal of Non-Crystalline Solids, 8. 45-49 doi:10.1016/0022-3093(72)90115-9
De Neufville, J.P., Moss, S.C., Ovshinsky, S.R. (1974) Photostructural transformations in amorphous As2Se3 and As2S3 films. Journal of Non-Crystalline Solids, 13 (2) 191-223 doi:10.1016/0022-3093(74)90091-x
Ovshinsky, S.R., Klose, P.H. (1972) Imaging in amorphous materials by structural alteration. Journal of Non-Crystalline Solids, 8. 892-898 doi:10.1016/0022-3093(72)90243-8
Feinleib, J., deNeufville, J., Moss, S. C., Ovshinsky, S. R. (1971) RAPID REVERSIBLE LIGHT‐INDUCED CRYSTALLIZATION OF AMORPHOUS SEMICONDUCTORS. Applied Physics Letters, 18 (6). 254-257 doi:10.1063/1.1653653
Feinleib, J., Ovshinsky, S.R. (1970) Reflectivity studies of the Te(Ge, As)-based amorphous semiconductor in the conducting and insulating states. Journal of Non-Crystalline Solids, 4. 564-572 doi:10.1016/0022-3093(70)90094-3
Kramer, B. (1972) Optical properties of amorphous semiconductors. Journal of Non-Crystalline Solids, 8. 659-663 doi:10.1016/0022-3093(72)90207-4
Moss, S.C., Flynn, P. (1972) Amorphous-crystal boundaries: An artifact in electron diffraction. Journal of Non-Crystalline Solids, 11 (3) 247-250 doi:10.1016/0022-3093(72)90007-5
Guha, S., Payson, J.S., Agarwal, S.C., Ovshinsky, S.R. (1987) Fluorinated amorphous silicon-germanium alloys deposited from disilane-germane mixture. Journal of Non-Crystalline Solids, 97. 1455-1458 doi:10.1016/0022-3093(87)90349-8
Bienenstock, A, Betts, F, Ovshinsky, S.R (1970) Structural studies of amorphous semiconductors. Journal of Non-Crystalline Solids, 2. 347-357 doi:10.1016/0022-3093(70)90150-x
Rockstad, Howard K, Flasck, Richard, Iwasa, S (1972) Seebeck coefficient in amorphous chalcogenide films. Journal of Non-Crystalline Solids, 8. 326-330 doi:10.1016/0022-3093(72)90154-8
Das, G.C., Bever, M.B., Uhlmann, D.R., Moss, S.C. (1972) Relaxation phenomena in amorphous selenium-tellurium alloys. Journal of Non-Crystalline Solids, 7 (3) 251-270 doi:10.1016/0022-3093(72)90026-9
 
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