| Reference Type | Journal (article/letter/editorial) |
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| Title | Reflectivity studies of the Te(Ge, As)-based amorphous semiconductor in the conducting and insulating states |
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| Journal | Journal of Non-Crystalline Solids |
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| Authors | Feinleib, J. | Author |
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| Ovshinsky, S.R. | Author |
| Year | 1970 (April) | Volume | 4 |
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| Publisher | Elsevier BV |
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| DOI | doi:10.1016/0022-3093(70)90094-3Search in ResearchGate |
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| Generate Citation Formats |
| Mindat Ref. ID | 608943 | Long-form Identifier | mindat:1:5:608943:0 |
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| GUID | 0 |
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| Full Reference | Feinleib, J., Ovshinsky, S.R. (1970) Reflectivity studies of the Te(Ge, As)-based amorphous semiconductor in the conducting and insulating states. Journal of Non-Crystalline Solids, 4. 564-572 doi:10.1016/0022-3093(70)90094-3 |
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| Plain Text | Feinleib, J., Ovshinsky, S.R. (1970) Reflectivity studies of the Te(Ge, As)-based amorphous semiconductor in the conducting and insulating states. Journal of Non-Crystalline Solids, 4. 564-572 doi:10.1016/0022-3093(70)90094-3 |
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| In | (1970) Journal of Non-Crystalline Solids Vol. 4. Elsevier BV |
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These are possibly similar items as determined by title/reference text matching only.