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Lin, Jian-Huang, Lin, Yow-Jon, Chang, Hsing-Cheng (2015) Tuning electrical parameters of graphene/p-type polycrystalline silicon Schottky diodes by ultraviolet irradiation. Applied Physics A, 118. 361-366 doi:10.1007/s00339-014-8742-3

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Reference TypeJournal (article/letter/editorial)
TitleTuning electrical parameters of graphene/p-type polycrystalline silicon Schottky diodes by ultraviolet irradiation
JournalApplied Physics A
AuthorsLin, Jian-HuangAuthor
Lin, Yow-JonAuthor
Chang, Hsing-ChengAuthor
Year2015 (January)Volume118
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s00339-014-8742-3Search in ResearchGate
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Mindat Ref. ID6017622Long-form Identifiermindat:1:5:6017622:2
GUID0
Full ReferenceLin, Jian-Huang, Lin, Yow-Jon, Chang, Hsing-Cheng (2015) Tuning electrical parameters of graphene/p-type polycrystalline silicon Schottky diodes by ultraviolet irradiation. Applied Physics A, 118. 361-366 doi:10.1007/s00339-014-8742-3
Plain TextLin, Jian-Huang, Lin, Yow-Jon, Chang, Hsing-Cheng (2015) Tuning electrical parameters of graphene/p-type polycrystalline silicon Schottky diodes by ultraviolet irradiation. Applied Physics A, 118. 361-366 doi:10.1007/s00339-014-8742-3
In(2015) Applied Physics A Vol. 118. Springer Science and Business Media LLC

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Lin, Yow-Jon, Zeng, Jian-Jhou, Chang, Hsing-Cheng (2015) Temperature-dependent electrical properties for graphene Schottky contact on n-type Si with and without sulfide treatment. Applied Physics A, 118. 353-359 doi:10.1007/s00339-014-8740-5
Lin, Yow-Jon, Chang, Hsing-Cheng, Liu, Day-Shan (2015) Tuning charge transport in pentacene thin-film transistors using the strain-induced electron–phonon coupling modification. Applied Physics A, 118. 1205-1210 doi:10.1007/s00339-014-8878-1
Lin, Yow-Jon, Hung, Cheng-Chun, Zeng, Jian-Jhou, Chang, Hsing-Cheng (2016) Extrinsic and intrinsic performance effects on the electrical property in few-layer graphene. Applied Physics A, 122. doi:10.1007/s00339-016-9619-4
Lin, Yow-Jon, Lin, Jian-Huang (2014) Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes. Applied Surface Science, 311. 224-229 doi:10.1016/j.apsusc.2014.05.044
Lin, Yow-Jon, Chin, Yi-Min, Chang, Hsing-Cheng (2015) Environmental effects on temperature-dependent carrier transports in poly(3-hexylthiophene) films. Applied Physics A, 119. 365-369 doi:10.1007/s00339-014-8976-0
Lin, Yow-Jon, Lin, Hong-Zhi, Yan, Nian-Hao, Tang, Zhi-Hui, Chang, Hsing-Cheng (2016) Incorporation of black phosphorus into P3HT:PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances. Applied Physics A, 122. doi:10.1007/s00339-016-0490-0
Lin, Yow-Jon, Chu, Yow-Lin, Huang, Y. S., Chang, Hsing-Cheng (2005) Optical and electrical properties of heavily Mg-doped GaN upon (NH4)2Sx treatment. Applied Physics Letters, 86 (20). 202107pp. doi:10.1063/1.1926404
Zeng, Jian-Jhou, Lin, Yow-Jon (2014) Electrical and optoelectronic properties of graphene Schottky contact on Si-nanowire arrays with and without H2O2 treatment. Applied Physics A, 116. 581-587 doi:10.1007/s00339-013-8157-6
Lin, Yow-Jon, Ruan, Cheng-He, Chu, Yu-Ju, Liu, Chia-Jyi, Lin, Fei-Hung (2015) Correlation between interface modification and rectifying behavior of p-type Cu2ZnSnS4/n-type Si diodes. Applied Physics A, 121. 103-108 doi:10.1007/s00339-015-9390-y
Lin, Yow-Jon, Lee, Ching-Ting, Chang, Shih-Sheng, Chang, Hsing-Cheng (2008) Electronic transport and Schottky barrier height of Ni contact on p-type GaN. Journal of Physics D: Applied Physics, 41. 95107pp. doi:10.1088/0022-3727/41/9/095107
Lin, Yow-Jon, Ker, Quantum, Ho, Ching-Yao, Chang, Hsing-Cheng, Chien, Feng-Tso (2003) Nitrogen-vacancy-related defects and Fermi level pinning in n-GaN Schottky diodes. Journal of Applied Physics, 94 (3). 1819-1822 doi:10.1063/1.1591417
 
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