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Zeng, Jian-Jhou, Lin, Yow-Jon (2014) Electrical and optoelectronic properties of graphene Schottky contact on Si-nanowire arrays with and without H2O2 treatment. Applied Physics A, 116. 581-587 doi:10.1007/s00339-013-8157-6

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Reference TypeJournal (article/letter/editorial)
TitleElectrical and optoelectronic properties of graphene Schottky contact on Si-nanowire arrays with and without H2O2 treatment
JournalApplied Physics A
AuthorsZeng, Jian-JhouAuthor
Lin, Yow-JonAuthor
Year2014 (August)Volume116
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s00339-013-8157-6Search in ResearchGate
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Mindat Ref. ID6017088Long-form Identifiermindat:1:5:6017088:4
GUID0
Full ReferenceZeng, Jian-Jhou, Lin, Yow-Jon (2014) Electrical and optoelectronic properties of graphene Schottky contact on Si-nanowire arrays with and without H2O2 treatment. Applied Physics A, 116. 581-587 doi:10.1007/s00339-013-8157-6
Plain TextZeng, Jian-Jhou, Lin, Yow-Jon (2014) Electrical and optoelectronic properties of graphene Schottky contact on Si-nanowire arrays with and without H2O2 treatment. Applied Physics A, 116. 581-587 doi:10.1007/s00339-013-8157-6
In(2014) Applied Physics A Vol. 116. Springer Science and Business Media LLC

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Lin, Yow-Jon, Zeng, Jian-Jhou, Chang, Hsing-Cheng (2015) Temperature-dependent electrical properties for graphene Schottky contact on n-type Si with and without sulfide treatment. Applied Physics A, 118. 353-359 doi:10.1007/s00339-014-8740-5
Zeng, Jian-Jhou, Lin, Yow-Jon (2014) Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes. Materials Chemistry and Physics, 145. 250-254 doi:10.1016/j.matchemphys.2014.02.018
Chin, Yi-Min, Lin, Yow-Jon (2014) Effects of H2O2 treatment on the optoelectronic property of poly(3-hexylthiophene) doped with the reduced graphene oxide sheets/Si-nanowire arrays/n-type Si diodes. Materials Chemistry and Physics, 145. 232-236 doi:10.1016/j.matchemphys.2014.02.007
Lin, Yow-Jon, Hung, Cheng-Chun, Zeng, Jian-Jhou, Chang, Hsing-Cheng (2016) Extrinsic and intrinsic performance effects on the electrical property in few-layer graphene. Applied Physics A, 122. doi:10.1007/s00339-016-9619-4
Lin, Yow-Jon, Zeng, Jian-Jhou (2014) Determination of Schottky barrier heights and Fermi-level unpinning at the graphene/n-type Si interfaces by X-ray photoelectron spectroscopy and Kelvin probe. Applied Surface Science, 322. 225-229 doi:10.1016/j.apsusc.2014.10.062
Lin, Yow-Jon, Jheng, Mei-Jyuan, Zeng, Jian-Jhou (2010) Current–voltage characterization of Au contact on sol–gel ZnO films with and without conducting polymer. Applied Surface Science, 256. 4493-4496 doi:10.1016/j.apsusc.2010.01.080
Lin, Yow-Jon, Yang, Shih-Hung (2014) Carrier transport and photoresponse for heterojunction diodes based on the reduced graphene oxide-based TiO2 composite and p-type Si. Applied Physics A, 116. 91-95 doi:10.1007/s00339-013-8166-5
Lin, Jian-Huang, Lin, Yow-Jon, Chang, Hsing-Cheng (2015) Tuning electrical parameters of graphene/p-type polycrystalline silicon Schottky diodes by ultraviolet irradiation. Applied Physics A, 118. 361-366 doi:10.1007/s00339-014-8742-3
Lin, Yow-Jon, Lin, Jian-Huang (2014) Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes. Applied Surface Science, 311. 224-229 doi:10.1016/j.apsusc.2014.05.044
(2013) High Schottky barrier height of Au contact on Si-nanowire arrays with sulfide treatment. Journal of Applied Physics, 114 (14). 143710pp. doi:10.1063/1.4825069
Lin, Yow-Jon, Lin, Hong-Zhi, Yan, Nian-Hao, Tang, Zhi-Hui, Chang, Hsing-Cheng (2016) Incorporation of black phosphorus into P3HT:PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances. Applied Physics A, 122. doi:10.1007/s00339-016-0490-0
 
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