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Rebhan, B., Hingerl, K. (2015) Physical mechanisms of copper-copper wafer bonding. Journal of Applied Physics, 118 (13). 135301pp. doi:10.1063/1.4932146

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Reference TypeJournal (article/letter/editorial)
TitlePhysical mechanisms of copper-copper wafer bonding
JournalJournal of Applied Physics
AuthorsRebhan, B.Author
Hingerl, K.Author
Year2015 (October 7)Volume118
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.4932146Search in ResearchGate
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Mindat Ref. ID5202800Long-form Identifiermindat:1:5:5202800:9
GUID0
Full ReferenceRebhan, B., Hingerl, K. (2015) Physical mechanisms of copper-copper wafer bonding. Journal of Applied Physics, 118 (13). 135301pp. doi:10.1063/1.4932146
Plain TextRebhan, B., Hingerl, K. (2015) Physical mechanisms of copper-copper wafer bonding. Journal of Applied Physics, 118 (13). 135301pp. doi:10.1063/1.4932146
In(2015, October) Journal of Applied Physics Vol. 118 (13) AIP Publishing

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Plach, T., Hingerl, K., Tollabimazraehno, S., Hesser, G., Dragoi, V., Wimplinger, M. (2013) Mechanisms for room temperature direct wafer bonding. Journal of Applied Physics, 113 (9). 94905pp. doi:10.1063/1.4794319
Chen, K. N., Chang, S. M., Fan, A., Tan, C. S., Shen, L. C., Reif, R. (2005) Process development and bonding quality investigations of silicon layer stacking based on copper wafer bonding. Applied Physics Letters, 87 (3). 31909pp. doi:10.1063/1.1995943
Chen, K. N., Fan, A., Tan, C. S., Reif, R., Wen, C. Y. (2002) Microstructure evolution and abnormal grain growth during copper wafer bonding. Applied Physics Letters, 81 (20). 3774-3776 doi:10.1063/1.1521240
Tabata, T., Sanchez, L., Fournel, F., Moriceau, H. (2015) Reliable four-point flexion test and model for die-to-wafer direct bonding. Journal of Applied Physics, 118 (1). 15301pp. doi:10.1063/1.4923357
Rauch, N., Andersen, E., Vicente-Gabás, I. G., Duchoslav, J., Minenkov, A., Gasiorowski, J., Flötgen, C., Hingerl, K., Groiss, H. (2022) A model for spectroscopic ellipsometry analysis of plasma-activated Si surfaces for direct wafer bonding. Applied Physics Letters, 121 (8) 81603 doi:10.1063/5.0101633
Turner, K. T., Spearing, S. M. (2002) Modeling of direct wafer bonding: Effect of wafer bow and etch patterns. Journal of Applied Physics, 92 (12). 7658-7666 doi:10.1063/1.1521792
Kumar, Jitender, Awasthi, A. M. (2015) Quantum paraelectricity in copper-titanates: Magnetic-order driven vitrification. Journal of Applied Physics, 118 (3). 34103pp. doi:10.1063/1.4926742
Sukharev, Valeriy, Zschech, Ehrenfried (2004) A model for electromigration-induced degradation mechanisms in dual-inlaid copper interconnects: Effect of interface bonding strength. Journal of Applied Physics, 96 (11). 6337-6343 doi:10.1063/1.1805188
KC, Santosh, Longo, Roberto C., Wallace, Robert M., Cho, Kyeongjae (2015) Surface oxidation energetics and kinetics on MoS2 monolayer. Journal of Applied Physics, 117 (13). 135301pp. doi:10.1063/1.4916536
Turner, K. T., Thouless, M. D., Spearing, S. M. (2004) Mechanics of wafer bonding: Effect of clamping. Journal of Applied Physics, 95 (1). 349-355 doi:10.1063/1.1629776
Chen, P. H., Lin, C. L., Liu, C. Y. (2007) Amorphous Si∕Au wafer bonding. Applied Physics Letters, 90 (13). 132120pp. doi:10.1063/1.2719025
 
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