Mayberry, C. S., Huang, Danhong, Balakrishnan, G., Kouhestani, C., Islam, N., Brueck, S. R. J., Sharma, A. K. (2015) Characterization of carrier transport properties in strained crystalline Si wall-like structures in the quasi-quantum regime. Journal of Applied Physics, 118 (13). 134301pp. doi:10.1063/1.4931151

See Also

These are possibly similar items as determined by title/reference text matching only.

	Sharma, A. K., Logofãtu, P. C., Mayberry, C. S., Brueck, S. R. J., Islam, N. E. (2007) Effects of dimensional nanoscaling on the optical and electrical properties of crystalline Si thin films. Journal of Applied Physics, 101 (10). 104914pp. doi:10.1063/1.2737983
	Birudavolu, S., Nuntawong, N., Balakrishnan, G., Xin, Y. C., Huang, S., Lee, S. C., Brueck, S. R. J., Hains, C. P., Huffaker, D. L. (2004) Selective area growth of InAs quantum dots formed on a patterned GaAs substrate. Applied Physics Letters, 85 (12). 2337-2339 doi:10.1063/1.1792792
	Kataria, S., Dhara, Sandip, Dash, S., Tyagi, A. K. (2015) Carrier mediated reduction of stiffness in nanoindented crystalline Si(100). Journal of Applied Physics, 118 (3). 35702pp. doi:10.1063/1.4927152
	Scott, K. A. M., Sharma, A. K., Wilson, C. M., Mullins, B. W., Soares, S. F., Brueck, S. R. J. (1993) High resolution Si position sensor. Applied Physics Letters, 62 (24). 3141-3143 doi:10.1063/1.109108
	Lee, S. C., Sharma, Y. D., Krishna, S., Brueck, S. R. J. (2012) Leaky-mode effects in plasmonic-coupled quantum dot infrared photodetectors. Applied Physics Letters, 100 (1). 11110pp. doi:10.1063/1.3675335
	Chang, S. J., Huang, C. F., Kallel, M. A., Wang, K. L., Bowman, R. C., Adams, P. M. (1988) Growth and characterization of Ge/Si strained‐layer superlattices. Applied Physics Letters, 53 (19). 1835-1837 doi:10.1063/1.100369
	Park, J. S., Karunasiri, R. P. G., Wang, K. L., Rhee, S. S., Chern, C. H. (1989) Hole transport through minibands of a symmetrically strained GexSi1−x/Si superlattice. Applied Physics Letters, 54 (16). 1564-1566 doi:10.1063/1.101314
	Lee, S. C., Huffaker, D. L., Brueck, S. R. J. (2008) Faceting of a quasi-two-dimensional GaAs crystal in nanoscale patterned growth. Applied Physics Letters, 92 (2). 23103pp. doi:10.1063/1.2830988
	Hung, K. M., Kuo, J.-Y., Hong, C. C., Cheng, H. H., Sun, G., Soref, R. A. (2010) Carrier dynamics of terahertz emission based on strained SiGe/Si single quantum well. Applied Physics Letters, 96 (21). 213502pp. doi:10.1063/1.3432075
	Ferreira, S. O., Paiva, E. C., Fontes, G. N., Neves, B. R. A. (2003) Characterization of CdTe quantum dots grown on Si(111) by hot wall epitaxy. Journal of Applied Physics, 93 (2). 1195-1198 doi:10.1063/1.1530364
	Chang, S. J., Wang, K. L., Bowman, R. C., Adams, P. M. (1989) Interdiffusion in a symmetrically strained Ge/Si superlattice. Applied Physics Letters, 54 (13). 1253-1255 doi:10.1063/1.100731