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Chang, S. J., Huang, C. F., Kallel, M. A., Wang, K. L., Bowman, R. C., Adams, P. M. (1988) Growth and characterization of Ge/Si strained‐layer superlattices. Applied Physics Letters, 53 (19). 1835-1837 doi:10.1063/1.100369

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Reference TypeJournal (article/letter/editorial)
TitleGrowth and characterization of Ge/Si strained‐layer superlattices
JournalApplied Physics Letters
AuthorsChang, S. J.Author
Huang, C. F.Author
Kallel, M. A.Author
Wang, K. L.Author
Bowman, R. C.Author
Adams, P. M.Author
Year1988 (November 7)Volume53
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.100369Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484646Long-form Identifiermindat:1:5:8484646:0
GUID0
Full ReferenceChang, S. J., Huang, C. F., Kallel, M. A., Wang, K. L., Bowman, R. C., Adams, P. M. (1988) Growth and characterization of Ge/Si strained‐layer superlattices. Applied Physics Letters, 53 (19). 1835-1837 doi:10.1063/1.100369
Plain TextChang, S. J., Huang, C. F., Kallel, M. A., Wang, K. L., Bowman, R. C., Adams, P. M. (1988) Growth and characterization of Ge/Si strained‐layer superlattices. Applied Physics Letters, 53 (19). 1835-1837 doi:10.1063/1.100369
In(1988, November) Applied Physics Letters Vol. 53 (19) AIP Publishing

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Adams, P. M., Bowman, R. C., Ahn, C. C., Chang, S. J., Arbet‐Engels, V., Kallel, M. A., Wang, K. L. (1992) Structural characterization of SimGenstrained layer superlattices. Journal of Applied Physics, 71 (9). 4305-4313 doi:10.1063/1.350812
Chang, S. J., Wang, K. L., Bowman, R. C., Adams, P. M. (1989) Interdiffusion in a symmetrically strained Ge/Si superlattice. Applied Physics Letters, 54 (13). 1253-1255 doi:10.1063/1.100731
Chang, S. J., Kallel, M. A., Wang, K. L., Bowman, R. C., Chow, Peter (1988) Study of molecular‐beam epitaxially grown GexSi1−x/Si layers by Raman scattering. Journal of Applied Physics, 64 (7). 3634-3636 doi:10.1063/1.341401
Chang, S.J., Huang, C.F., Kallel, M.A., Wang, K.L., Bowman, R.C., Adams, P.M. (1989) Study of ultra-thin Ge/Si strained layer superlattice. Journal of Crystal Growth, 95 (1). 451-454 doi:10.1016/0022-0248(89)90440-5
Wang, P. J., Goorsky, M. S., Meyerson, B. S., LeGoues, F. K., Tejwani, M. J. (1991) Characterization of Si/SiGe strained‐layer superlattices grown by ultrahigh vacuum/chemical vapor deposition technique. Applied Physics Letters, 59 (7). 814-816 doi:10.1063/1.105352
Katsuyama, T., Bedair, S. M., Giles, N. C., Burns, R. P., Schetzina, J. F. (1987) Growth and characterization of InGaAs/GaAsP strained layer superlattices. Journal of Applied Physics, 62 (2). 498-502 doi:10.1063/1.339773
Kurtz, S. R., Osbourn, G. C., Biefeld, R. M., Lee, S. R. (1988) Photoluminescence and the band structure of InAsSb strained‐layer superlattices. Applied Physics Letters, 53 (3). 216-218 doi:10.1063/1.100135
Gronet, C. M., King, C. A., Opyd, W., Gibbons, J. F., Wilson, S. D., Hull, R. (1987) Growth of GeSi/Si strained‐layer superlattices using limited reaction processing. Journal of Applied Physics, 61 (6). 2407-2409 doi:10.1063/1.337960
Kurtz, S. R., Osbourn, G. C., Biefeld, R. M., Dawson, L. R., Stein, H. J. (1988) Extended infrared response of InAsSb strained‐layer superlattices. Applied Physics Letters, 52 (10). 831-833 doi:10.1063/1.99298
Beery, J. G., Laurich, B. K., Maggiore, C. J., Smith, D. L., Elcess, K., Fonstad, C. G., Mailhiot, C. (1989) Growth and characterization of (111) oriented GaInAs/GaAs strained‐layer superlattices. Applied Physics Letters, 54 (3). 233-235 doi:10.1063/1.101016
Vandenberg, J. M., Bean, J. C., Hamm, R. A., Hull, R. (1988) Kinematical simulation of high‐resolution x‐ray diffraction curves of GexSi1−x/Si strained‐layer superlattices: A structural assessment. Applied Physics Letters, 52 (14). 1152-1154 doi:10.1063/1.99189
 
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