Yamashita, Y., Yoshikawa, H., Chikyo, T., Kobayashi, K. (2014) Direct observation of bias-dependence potential distribution in metal/HfO2 gate stack structures by hard x-ray photoelectron spectroscopy under device operation. Journal of Applied Physics, 115 (4). 43721pp. doi:10.1063/1.4863637

See Also

These are possibly similar items as determined by title/reference text matching only.

	Yamashita, Yoshiyuki, Yoshikawa, Hideki, Chikyo, Toyohiro (2014) Bias dependent potential distribution of a Pt/HfO2/SiO2/Si gate structure obtained from a bias application in hard X-ray photoelectron spectroscopy. Japanese Journal of Applied Physics, 53 (5) 5 doi:10.7567/jjap.53.05fh05
	Nagata, T., Haemori, M., Yamashita, Y., Yoshikawa, H., Iwashita, Y., Kobayashi, K., Chikyow, T. (2011) Bias application hard x-ray photoelectron spectroscopy study of forming process of Cu/HfO2/Pt resistive random access memory structure. Applied Physics Letters, 99 (22). 223517pp. doi:10.1063/1.3664781
	Nagata, Takahiro, Haemori, Masamitsu, Yamashita, Yoshiyuki, Yoshikawa, Hideki, Kobayashi, Keisuke, Chikyow, Toyohiro (2012) Observation of filament formation process of Cu/HfO2/Pt ReRAM structure by hard x-ray photoelectron spectroscopy under bias operation. Journal of Materials Research, 27 (6) 869-878 doi:10.1557/jmr.2011.448
	Nagata, T., Haemori, M., Yamashita, Y., Yoshikawa, H., Iwashita, Y., Kobayashi, K., Chikyow, T. (2010) Oxygen migration at Pt/HfO2/Pt interface under bias operation. Applied Physics Letters, 97 (8). 82902pp. doi:10.1063/1.3483756
	Nagata, T., Oh, S., Yamashita, Y., Yoshikawa, H., Hayakawa, R., Kobayashi, K., Chikyow, T., Wakayama, Y. (2012) Hard x-ray photoelectron spectroscopy study on band alignment at poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/ZnO interface. Applied Physics Letters, 101 (17). 173303pp. doi:10.1063/1.4762834
	Papp, C., Conti, G., Balke, B., Ueda, S., Yamashita, Y., Yoshikawa, H., Uritsky, Y. S., Kobayashi, K., Fadley, C. S. (2012) Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means of standing-wave hard x-ray photoemission spectroscopy. Journal of Applied Physics, 112 (11). 114501pp. doi:10.1063/1.4765720
	Kobayashi, H., Sakurai, T., Yamashita, Y., Kubota, T., Maida, O., Takahashi, M. (2006) Method of observation of low density interface states by means of X-ray photoelectron spectroscopy under bias and passivation by cyanide ions. Applied Surface Science, 252. 7700-7712 doi:10.1016/j.apsusc.2006.03.055
	Ikeuchi, J., Hamamatsu, H., Miyamoto, T., Tanaka, S., Yamashita, Y., Yoshikawa, H., Ueda, S. (2015) Electronic structure of the polymer-cathode interface of an organic electroluminescent device investigated using operando hard x-ray photoelectron spectroscopy. Journal of Applied Physics, 118 (8). 85308pp. doi:10.1063/1.4929448
	Yang, A. L., Yamashita, Y., Kobata, M., Matsushita, T., Yoshikawa, H., Píš, I., Imura, M., Yamaguchi, T., Sakata, O., Nanishi, Y., Kobayashi, K. (2013) Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction. Applied Physics Letters, 102 (3). 31914pp. doi:10.1063/1.4789373
	Nagata, T., Oh, S., Yamashita, Y., Yoshikawa, H., Ikeno, N., Kobayashi, K., Chikyow, T., Wakayama, Y. (2013) Photoelectron spectroscopic study of band alignment of polymer/ZnO photovoltaic device structure. Applied Physics Letters, 102 (4). 43302pp. doi:10.1063/1.4790298
	Uedono, A., Naito, T., Otsuka, T., Shiraishi, K., Yamabe, K., Miyazaki, S., Watanabe, H., Umezawa, N., Chikyow, T., Akasaka, Y., Kamiyama, S., Nara, Y., Yamada, K. (2006) Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation. Journal of Applied Physics, 100 (6). 64501pp. doi:10.1063/1.2345618