Tedesco, J. L., Rowe, J. E., Nemanich, R. J. (2009) Conducting atomic force microscopy studies of nanoscale cobalt silicide Schottky barriers on Si(111) and Si(100). Journal of Applied Physics, 105 (8). 83721pp. doi:10.1063/1.3100212

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Reference Type	Journal (article/letter/editorial)
Title	Conducting atomic force microscopy studies of nanoscale cobalt silicide Schottky barriers on Si(111) and Si(100)
Journal	Journal of Applied Physics
Authors	Tedesco, J. L.		Author
	Rowe, J. E.		Author
	Nemanich, R. J.		Author
Year	2009 (April 15)	Volume	105
Issue	8
Publisher	AIP Publishing
DOI	doi:10.1063/1.3100212Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	5166147	Long-form Identifier	mindat:1:5:5166147:2
GUID	0
Full Reference	Tedesco, J. L., Rowe, J. E., Nemanich, R. J. (2009) Conducting atomic force microscopy studies of nanoscale cobalt silicide Schottky barriers on Si(111) and Si(100). Journal of Applied Physics, 105 (8). 83721pp. doi:10.1063/1.3100212
Plain Text	Tedesco, J. L., Rowe, J. E., Nemanich, R. J. (2009) Conducting atomic force microscopy studies of nanoscale cobalt silicide Schottky barriers on Si(111) and Si(100). Journal of Applied Physics, 105 (8). 83721pp. doi:10.1063/1.3100212
In	(2009, April) Journal of Applied Physics Vol. 105 (8) AIP Publishing

	Tedesco, J. L., Rowe, J. E., Nemanich, R. J. (2010) Titanium silicide islands on atomically clean Si(100): Identifying single electron tunneling effects. Journal of Applied Physics, 107 (12). 123715pp. doi:10.1063/1.3437049
	Oh, Jaehwan, Nemanich, R. J. (2002) Current–voltage and imaging of TiSi2 islands on Si(001) surfaces using conductive-tip atomic force microscopy. Journal of Applied Physics, 92 (6). 3326-3331 doi:10.1063/1.1499545
	Weitering, H. H., Sullivan, J. P., Carolissen, R. J., Pérez‐Sandoz, R., Graham, W. R., Tung, R. T. (1996) Inhomogeneous Schottky barriers at Ag/Si(111) and Ag/Si(100) interfaces. Journal of Applied Physics, 79 (10). 7820-7829 doi:10.1063/1.362390
	*Lin, L., Guo, Y., Robertson, J. (2012) Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning. Applied Physics Letters, 101 (5). 52110pp. doi:10.1063/1.4742861*
	Fitting, L., Ware, M. E., Haywood, J. R., Walter, Jennifer J. H., Nemanich, R. J. (2005) Self-organized nanoscale Ge dots and dashes on SiGe/Si superlattices. Journal of Applied Physics, 98 (2). 24317pp. doi:10.1063/1.1993751
	*Thompson, M. J., Johnson, N. M., Nemanich, R. J., Tsai, C. C. (1981) Silicide formation in Pd‐a‐Si:H Schottky barriers. Applied Physics Letters, 39 (3). 274-276 doi:10.1063/1.92670*
	*van Gurp, G. J. (1975) Cobalt silicide layers on Si. II. Schottky barrier height and contact resistivity. Journal of Applied Physics, 46 (10). 4308-4311 doi:10.1063/1.321452*
	Luo, E. Z., Wilson, I. H., Xu, J. B., Ma, J. X. (1997) “Resonant conducting” in nano-patterning the hydrogen-passivated Si(100) by atomic force microscopy. Applied Physics Letters, 71 (14). 2035-2037 doi:10.1063/1.119779
	*Ospelt, M., Henz, J., Flepp, L., von Känel, H. (1988) Schottky barriers of epitaxial NiSi2on Si(111). Applied Physics Letters, 52 (3). 227-229 doi:10.1063/1.99527*
	Bardwell, J. A., Allegretto, E. M., Mason, B., Erickson, L. E., Champion, H. G. (1996) Dopant delineation on Si(100) using anodic oxidation and atomic force microscopy. Applied Physics Letters, 68 (20). 2840-2842 doi:10.1063/1.116342
	*Howald, L., Lüthi, R., Meyer, E., Güntherodt, H.-J. (1995) Atomic-force microscopy on the Si(111)7×7 surface. Physical Review B, 51 (8) 5484-5487 doi:10.1103/physrevb.51.5484*

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Tedesco, J. L., Rowe, J. E., Nemanich, R. J. (2009) Conducting atomic force microscopy studies of nanoscale cobalt silicide Schottky barriers on Si(111) and Si(100). Journal of Applied Physics, 105 (8). 83721pp. doi:10.1063/1.3100212

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