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Bardwell, J. A., Allegretto, E. M., Mason, B., Erickson, L. E., Champion, H. G. (1996) Dopant delineation on Si(100) using anodic oxidation and atomic force microscopy. Applied Physics Letters, 68 (20). 2840-2842 doi:10.1063/1.116342

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Reference TypeJournal (article/letter/editorial)
TitleDopant delineation on Si(100) using anodic oxidation and atomic force microscopy
JournalApplied Physics Letters
AuthorsBardwell, J. A.Author
Allegretto, E. M.Author
Mason, B.Author
Erickson, L. E.Author
Champion, H. G.Author
Year1996 (May 13)Volume68
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.116342Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8516043Long-form Identifiermindat:1:5:8516043:7
GUID0
Full ReferenceBardwell, J. A., Allegretto, E. M., Mason, B., Erickson, L. E., Champion, H. G. (1996) Dopant delineation on Si(100) using anodic oxidation and atomic force microscopy. Applied Physics Letters, 68 (20). 2840-2842 doi:10.1063/1.116342
Plain TextBardwell, J. A., Allegretto, E. M., Mason, B., Erickson, L. E., Champion, H. G. (1996) Dopant delineation on Si(100) using anodic oxidation and atomic force microscopy. Applied Physics Letters, 68 (20). 2840-2842 doi:10.1063/1.116342
In(1996, May) Applied Physics Letters Vol. 68 (20) AIP Publishing

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Schmuki, P., Buchanan, M., Mason, B. F., Sproule, G. I., Graham, M. J. (1996) Thickness measurements of thin anodic oxides on GaAs using atomic force microscopy, profilometry, and secondary ion mass spectrometry. Applied Physics Letters, 68 (19). 2675-2677 doi:10.1063/1.116278
Schmuki, P., Erickson, L. E., Champion, G., Mason, B. F., Fraser, J., Moessner, C. (1997) Surface topology of GaAs(100) after focused ion beam implantation of Si++. Applied Physics Letters, 70 (10). 1305-1307 doi:10.1063/1.118519
Palange, E., Capellini, G., Di Gaspare, L., Evangelisti, F. (1996) Atomic force microscopy and photoluminescence study of Ge layers and self‐organized Ge quantum dots on Si(100). Applied Physics Letters, 68 (21). 2982-2984 doi:10.1063/1.116669
Helbig, H. F., Beasock, J. V., Ramseyer, G. O., Walsh, L. H. (1996) Microcrystallography using atomic force microscopy. Applied Physics Letters, 68 (13). 1778-1780 doi:10.1063/1.116664
Lazzarino, M., Heun, S., Ressel, B., Prince, K. C., Pingue, P., Ascoli, C. (2002) Atomic force microscope anodic oxidation studied by spectroscopic microscopy. Applied Physics Letters, 81 (15). 2842-2844 doi:10.1063/1.1509121
Reinhardt, F., Dwir, B., Kapon, E. (1996) Oxidation of GaAs/AlGaAs heterostructures studied by atomic force microscopy in air. Applied Physics Letters, 68 (22). 3168-3170 doi:10.1063/1.115813
Nelson, M. W., Schroeder, P. G., Schlaf, R., Parkinson, B. A., Almgren, C. W., Erickson, A. N. (1999) Spatially resolved dopant profiling of patterned Si wafers by bias-applied phase-imaging tapping-mode atomic force microscopy. Applied Physics Letters, 74 (10). 1421-1423 doi:10.1063/1.123569
Boer, E. A., Bell, L. D., Brongersma, M. L., Atwater, H. A., Ostraat, M. L., Flagan, R. C. (2001) Charging of single Si nanocrystals by atomic force microscopy. Applied Physics Letters, 78 (20). 3133-3135 doi:10.1063/1.1371783
Verhoeven, M. A. J., Moerman, R., Bijlsma, M. E., Rijnders, A. J. H. M., Blank, D. H. A., Gerritsma, G. J., Rogalla, H. (1996) Nucleation and growth of PrBa2Cu3O7−δ barrier layers on ramps in DyBa2Cu3O7−δ studied by atomic force microscopy. Applied Physics Letters, 68 (9). 1276-1278 doi:10.1063/1.115951
Bardwell, J. A., Draper, N., Schmuki, P. (1996) Growth and characterization of anodic oxides on Si(100) formed in 0.1 M hydrochloric acid. Journal of Applied Physics, 79 (11). 8761-8769 doi:10.1063/1.362502
Fang, S. J., Chen, W., Yamanaka, T., Helms, C. R. (1996) Comparison of Si surface roughness measured by atomic force microscopy and ellipsometry. Applied Physics Letters, 68 (20). 2837-2839 doi:10.1063/1.116341
 
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