Najmi, S., Chen, X. K., Thewalt, M. L. W., Watkins, S. P. (2007) Dicarbon defects in as-grown and annealed carbon-doped InAs. Journal of Applied Physics, 102 (8). 83528pp. doi:10.1063/1.2798867

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Reference Type	Journal (article/letter/editorial)
Title	Dicarbon defects in as-grown and annealed carbon-doped InAs
Journal	Journal of Applied Physics
Authors	Najmi, S.		Author
	Chen, X. K.		Author
	Thewalt, M. L. W.		Author
	Watkins, S. P.		Author
Year	2007 (October 15)	Volume	102
Issue	8
Publisher	AIP Publishing
DOI	doi:10.1063/1.2798867Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	5152133	Long-form Identifier	mindat:1:5:5152133:2
GUID	0
Full Reference	Najmi, S., Chen, X. K., Thewalt, M. L. W., Watkins, S. P. (2007) Dicarbon defects in as-grown and annealed carbon-doped InAs. Journal of Applied Physics, 102 (8). 83528pp. doi:10.1063/1.2798867
Plain Text	Najmi, S., Chen, X. K., Thewalt, M. L. W., Watkins, S. P. (2007) Dicarbon defects in as-grown and annealed carbon-doped InAs. Journal of Applied Physics, 102 (8). 83528pp. doi:10.1063/1.2798867
In	(2007, October) Journal of Applied Physics Vol. 102 (8) AIP Publishing

	*Najmi, S., Zhang, X., Chen, X. K., Thewalt, M. L. W., Watkins, S. P. (2006) Raman scattering in carbon-doped InAs. Applied Physics Letters, 88 (4). 41908pp. doi:10.1063/1.2168015*
	*Najmi, S., Chen, X. K., Yang, A., Steger, M., Thewalt, M. L. W., Watkins, S. P. (2006) Local vibrational mode study of carbon-dopedInAs. Physical Review B, 74 (11) doi:10.1103/physrevb.74.113202*
	*Lacroix, Y., Tran, C. A., Watkins, S. P., Thewalt, M. L. W. (1996) Low‐temperature photoluminescence of epitaxial InAs. Journal of Applied Physics, 80 (11). 6416-6424 doi:10.1063/1.363660*
	*Lacroix, Y., Watkins, S. P., Tran, C. A., Thewalt, M. L. W. (1995) Sharp excitonic photoluminescence from epitaxial InAs. Applied Physics Letters, 66 (9). 1101-1103 doi:10.1063/1.113825*
	Lackner, D., Pitts, O. J., Steger, M., Yang, A., Thewalt, M. L. W., Watkins, S. P. (2009) Strain balanced InAs/InAsSb superlattice structures with optical emission to 10 μm. Applied Physics Letters, 95 (8). 81906pp. doi:10.1063/1.3216041
	Watkins, S. P., Haacke, G., Burkhard, H., Thewalt, M. L. W., Charbonneau, S. (1988) Magnetophotoluminescence characterization of residual donors in GaAs grown by metalorganic chemical vapor deposition. Journal of Applied Physics, 64 (6). 3205-3209 doi:10.1063/1.341537
	Lackner, D., Steger, M., Thewalt, M. L. W., Pitts, O. J., Cherng, Y. T., Watkins, S. P., Plis, E., Krishna, S. (2012) InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations. Journal of Applied Physics, 111 (3). 34507pp. doi:10.1063/1.3681328
	*Lacroix, Y., Tran, C. A., Watkins, S. P., Thewalt, M. L. W. (1996) Optical identification of the exciton–polariton in epitaxial InAs. Canadian Journal of Physics, 74. 212-215 doi:10.1139/p96-861*
	*Salehzadeh, O., Chen, M. X., Kavanagh, K. L., Watkins, S. P. (2011) Rectifying characteristics of Te-doped GaAs nanowires. Applied Physics Letters, 99 (18). 182102pp. doi:10.1063/1.3658633*
	Chen, K., Yuan, S. K., Li, P. L., Gao, F., Liu, J., Li, G. L., Zhao, A. G., Lu, X. M., Liu, J. M., Zhu, J. S. (2007) High permittivity in Zr doped NiO ceramics. Journal of Applied Physics, 102 (3). 34103pp. doi:10.1063/1.2764217
	Rafol, S. B., Wijewarnasuriya, P. S., Sou, I. K., Sivananthan, S., Faurie, J. P. (1993) Shubnikov–de Haas oscillations on as‐grown and annealed molecular‐beam‐epitaxy‐grown Hg1−xCdxTe alloys doped with indium. Journal of Applied Physics, 73 (1). 216-225 doi:10.1063/1.353885

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Najmi, S., Chen, X. K., Thewalt, M. L. W., Watkins, S. P. (2007) Dicarbon defects in as-grown and annealed carbon-doped InAs. Journal of Applied Physics, 102 (8). 83528pp. doi:10.1063/1.2798867

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