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Lacroix, Y., Tran, C. A., Watkins, S. P., Thewalt, M. L. W. (1996) Low‐temperature photoluminescence of epitaxial InAs. Journal of Applied Physics, 80 (11). 6416-6424 doi:10.1063/1.363660

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Reference TypeJournal (article/letter/editorial)
TitleLow‐temperature photoluminescence of epitaxial InAs
JournalJournal of Applied Physics
AuthorsLacroix, Y.Author
Tran, C. A.Author
Watkins, S. P.Author
Thewalt, M. L. W.Author
Year1996 (December)Volume80
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.363660Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5081682Long-form Identifiermindat:1:5:5081682:6
GUID0
Full ReferenceLacroix, Y., Tran, C. A., Watkins, S. P., Thewalt, M. L. W. (1996) Low‐temperature photoluminescence of epitaxial InAs. Journal of Applied Physics, 80 (11). 6416-6424 doi:10.1063/1.363660
Plain TextLacroix, Y., Tran, C. A., Watkins, S. P., Thewalt, M. L. W. (1996) Low‐temperature photoluminescence of epitaxial InAs. Journal of Applied Physics, 80 (11). 6416-6424 doi:10.1063/1.363660
In(1996, December) Journal of Applied Physics Vol. 80 (11) AIP Publishing

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Lacroix, Y., Watkins, S. P., Tran, C. A., Thewalt, M. L. W. (1995) Sharp excitonic photoluminescence from epitaxial InAs. Applied Physics Letters, 66 (9). 1101-1103 doi:10.1063/1.113825
Lacroix, Y., Tran, C. A., Watkins, S. P., Thewalt, M. L. W. (1996) Optical identification of the exciton–polariton in epitaxial InAs. Canadian Journal of Physics, 74. 212-215 doi:10.1139/p96-861
Liu, C. W., St. Amour, A., Sturm, J. C., Lacroix, Y. R. J., Thewalt, M. L. W., Magee, C. W., Eaglesham, D. (1996) Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates. Journal of Applied Physics, 80 (5). 3043-3047 doi:10.1063/1.363163
Harrison, D. A., Arès, R., Watkins, S. P., Thewalt, M. L. W., Bolognesi, C. R., Beckett, D. J. S., SpringThorpe, A. J. (1997) Large photoluminescence enhancements from epitaxial GaAs passivated by postgrowth phosphidization. Applied Physics Letters, 70 (24). 3275-3277 doi:10.1063/1.118426
St. Amour, A., Sturm, J. C., Lacroix, Y., Thewalt, M. L. W. (1994) Enhancement of high‐temperature photoluminescence in strained Si1−xGex/Si heterostructures by surface passivation. Applied Physics Letters, 65 (26). 3344-3346 doi:10.1063/1.112386
Najmi, S., Chen, X. K., Thewalt, M. L. W., Watkins, S. P. (2007) Dicarbon defects in as-grown and annealed carbon-doped InAs. Journal of Applied Physics, 102 (8). 83528pp. doi:10.1063/1.2798867
Najmi, S., Zhang, X., Chen, X. K., Thewalt, M. L. W., Watkins, S. P. (2006) Raman scattering in carbon-doped InAs. Applied Physics Letters, 88 (4). 41908pp. doi:10.1063/1.2168015
Lackner, D., Steger, M., Thewalt, M. L. W., Pitts, O. J., Cherng, Y. T., Watkins, S. P., Plis, E., Krishna, S. (2012) InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations. Journal of Applied Physics, 111 (3). 34507pp. doi:10.1063/1.3681328
Hu, J., Harrison, D. A., Karasyuk, V. A., Watkins, S. P., Thewalt, M. L. W., Bassignana, I. C., Beckett, D. J. S., Hillier, G. C., SpringThorpe, A. J. (1998) Lattice parameter variation in doped GaAs substrates determined using high resolution photoluminescence spectroscopy. Journal of Applied Physics, 84 (11). 6305-6311 doi:10.1063/1.368953
Harrison, D. A., Watkins, S. P., Thewalt, M. L. W., Beckett, D. J. S., SpringThorpe, A. J. (1998) New Photoluminescence Transition in GaAs InvolvingD−States. Physical Review Letters, 80 (11). 2461-2464 doi:10.1103/physrevlett.80.2461
St. Amour, A., Liu, C. W., Sturm, J. C., Lacroix, Y., Thewalt, M. L. W. (1996) Erratum: ‘‘Defect‐free band‐edge photoluminescence and band gap measurement of pseudomorphic Si1−x−yGexCy alloy layers on Si (100)’’ [Appl. Phys. Lett. 67, 3915 (1995)]. Applied Physics Letters, 68 (8). 1169 doi:10.1063/1.116797
 
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