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Lynch, C., Chason, E., Beresford, R., Freund, L. B., Tetz, K., Schwarz, K. W. (2005) Limits of strain relaxation in InGaAs∕GaAs probed in real time by in situ wafer curvature measurement. Journal of Applied Physics, 98 (7). 73532pp. doi:10.1063/1.2060947

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Reference TypeJournal (article/letter/editorial)
TitleLimits of strain relaxation in InGaAs∕GaAs probed in real time by in situ wafer curvature measurement
JournalJournal of Applied Physics
AuthorsLynch, C.Author
Chason, E.Author
Beresford, R.Author
Freund, L. B.Author
Tetz, K.Author
Schwarz, K. W.Author
Year2005 (October)Volume98
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.2060947Search in ResearchGate
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Mindat Ref. ID5136288Long-form Identifiermindat:1:5:5136288:1
GUID0
Full ReferenceLynch, C., Chason, E., Beresford, R., Freund, L. B., Tetz, K., Schwarz, K. W. (2005) Limits of strain relaxation in InGaAs∕GaAs probed in real time by in situ wafer curvature measurement. Journal of Applied Physics, 98 (7). 73532pp. doi:10.1063/1.2060947
Plain TextLynch, C., Chason, E., Beresford, R., Freund, L. B., Tetz, K., Schwarz, K. W. (2005) Limits of strain relaxation in InGaAs∕GaAs probed in real time by in situ wafer curvature measurement. Journal of Applied Physics, 98 (7). 73532pp. doi:10.1063/1.2060947
In(2005, October) Journal of Applied Physics Vol. 98 (7) AIP Publishing

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Lynch, C., Chason, E., Beresford, R., Hong, S. K. (2004) Influence of growth flux and surface supersaturation on InGaAs/GaAs strain relaxation. Applied Physics Letters, 84 (7). 1085-1087 doi:10.1063/1.1646764
Beresford, R., Lynch, C., Chason, E. (2003) Kinetics of dislocation-mediated strain relaxation in InGaAs/GaAs heteroepitaxy. Journal of Crystal Growth, 251 (1). 106-111 doi:10.1016/s0022-0248(02)02376-x
Lynch, C., Chason, E., Beresford, R. (2006) Mobile dislocation density and strain relaxation rate evolution during InxGa1−xAs∕GaAs heteroepitaxy. Journal of Applied Physics, 100 (1). 13525pp. doi:10.1063/1.2206125
González, M. U., González, Y., González, L. (2002) Study of the relaxation process during InGaAs/GaAs (001) growth from in situ real-time stress measurements. Applied Physics Letters, 81 (22). 4162-4164 doi:10.1063/1.1524303
Chen, J. F., Chiang, C. H., Hsieh, P. C., Wang, J. S. (2007) Analysis of strain relaxation in GaAs∕InGaAs∕GaAs structures by spectroscopy of relaxation-induced states. Journal of Applied Physics, 101 (3). 33702pp. doi:10.1063/1.2433771
Sheldon, Brian W., Rajamani, Ashok, Bhandari, Abhinav, Chason, Eric, Hong, S. K., Beresford, R. (2005) Competition between tensile and compressive stress mechanisms during Volmer-Weber growth of aluminum nitride films. Journal of Applied Physics, 98 (4). 43509pp. doi:10.1063/1.1994944
Woicik, J. C., Miyano, K. E., Pellegrino, J. G., Shaw, P. S., Southworth, S. H., Karlin, B. A. (1996) Strain and relaxation in InAs and InGaAs films grown on GaAs(001). Applied Physics Letters, 68 (21). 3010-3012 doi:10.1063/1.116680
Drachenko, O., Kozlov, D., Ikonnikov, A. V., Spirin, K. E., Gavrilenko, V., Schneider, H., Helm, M., Wosnitza, J. (2013) Long spin relaxation time of holes in InGaAs/GaAs quantum wells probed by cyclotron resonance spectroscopy. Physical Review B, 87 (7) doi:10.1103/physrevb.87.075315
Chang, K. L., Epple, J. H., Pickrell, G. W., Lin, H. C., Cheng, K. Y., Hsieh, K. C. (2000) Strain relaxation and defect reduction in InxGa1−xAs/GaAs by lateral oxidation of an underlying AlGaAs layer. Journal of Applied Physics, 88 (11). 6922-6924 doi:10.1063/1.1287766
Simon, W. K., Akdogan, E. K., Safari, A. (2005) Anisotropic strain relaxation in (Ba0.6Sr0.4)TiO3 epitaxial thin films. Journal of Applied Physics, 97 (10). 103530pp. doi:10.1063/1.1901833
Robb, J. L., Chen, Y., Timmons, A., Hall, K. C., Shchekin, O. B., Deppe, D. G. (2007) Time-resolved Faraday rotation measurements of spin relaxation in InGaAs∕GaAs quantum dots: Role of excess energy. Applied Physics Letters, 90 (15). 153118pp. doi:10.1063/1.2721380
 
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