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Robb, J. L., Chen, Y., Timmons, A., Hall, K. C., Shchekin, O. B., Deppe, D. G. (2007) Time-resolved Faraday rotation measurements of spin relaxation in InGaAs∕GaAs quantum dots: Role of excess energy. Applied Physics Letters, 90 (15). 153118pp. doi:10.1063/1.2721380

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Reference TypeJournal (article/letter/editorial)
TitleTime-resolved Faraday rotation measurements of spin relaxation in InGaAs∕GaAs quantum dots: Role of excess energy
JournalApplied Physics Letters
AuthorsRobb, J. L.Author
Chen, Y.Author
Timmons, A.Author
Hall, K. C.Author
Shchekin, O. B.Author
Deppe, D. G.Author
Year2007 (April 9)Volume90
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.2721380Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8553376Long-form Identifiermindat:1:5:8553376:7
GUID0
Full ReferenceRobb, J. L., Chen, Y., Timmons, A., Hall, K. C., Shchekin, O. B., Deppe, D. G. (2007) Time-resolved Faraday rotation measurements of spin relaxation in InGaAs∕GaAs quantum dots: Role of excess energy. Applied Physics Letters, 90 (15). 153118pp. doi:10.1063/1.2721380
Plain TextRobb, J. L., Chen, Y., Timmons, A., Hall, K. C., Shchekin, O. B., Deppe, D. G. (2007) Time-resolved Faraday rotation measurements of spin relaxation in InGaAs∕GaAs quantum dots: Role of excess energy. Applied Physics Letters, 90 (15). 153118pp. doi:10.1063/1.2721380
In(2007, April) Applied Physics Letters Vol. 90 (15) AIP Publishing

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Hall, K. C., Koerperick, E. J., Boggess, Thomas F., Shchekin, O. B., Deppe, D. G. (2007) Hole spin relaxation in neutral InGaAs quantum dots: Decay to dark states. Applied Physics Letters, 90 (5). 53109pp. doi:10.1063/1.2437063
Gündoğdu, K., Hall, K. C., Boggess, Thomas F., Deppe, D. G., Shchekin, O. B. (2004) Efficient electron spin detection with positively charged quantum dots. Applied Physics Letters, 84 (15). 2793-2795 doi:10.1063/1.1695637
Zhang, L., Boggess, Thomas F., Deppe, D. G., Huffaker, D. L., Shchekin, O. B., Cao, C. (2000) Dynamic response of 1.3-μm-wavelength InGaAs/GaAs quantum dots. Applied Physics Letters, 76 (10). 1222-1224 doi:10.1063/1.125991
Park, G., Shchekin, O. B., Huffaker, D. L., Deppe, D. G. (1998) Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levels. Applied Physics Letters, 73 (23). 3351-3353 doi:10.1063/1.122766
Zhang, L., Boggess, Thomas F., Gundogdu, K., Flatté, Michael E., Deppe, D. G., Cao, C., Shchekin, O. B. (2001) Excited-state dynamics and carrier capture in InGaAs/GaAs quantum dots. Applied Physics Letters, 79 (20). 3320-3322 doi:10.1063/1.1418035
Gündoğdu, K., Hall, K. C., Koerperick, E. J., Pryor, C. E., Flatté, M. E., Boggess, Thomas F., Shchekin, O. B., Deppe, D. G. (2005) Electron and hole spin dynamics in semiconductor quantum dots. Applied Physics Letters, 86 (11). 113111pp. doi:10.1063/1.1857067
Shchekin, O. B., Deppe, D. G., Lu, D. (2001) Fermi-level effect on the interdiffusion of InAs and InGaAs quantum dots. Applied Physics Letters, 78 (20). 3115-3117 doi:10.1063/1.1372362
Gündoğdu, K., Hall, K. C., Boggess, Thomas F., Deppe, D. G., Shchekin, O. B. (2004) Ultrafast electron capture into p-modulation-doped quantum dots. Applied Physics Letters, 85 (20). 4570-4572 doi:10.1063/1.1815371
Huffaker, D. L., Deppe, D. G. (1998) Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots. Applied Physics Letters, 73 (4). 520-522 doi:10.1063/1.121920
Huffaker, D. L., Park, G., Zou, Z., Shchekin, O. B., Deppe, D. G. (1998) 1.3 μm room-temperature GaAs-based quantum-dot laser. Applied Physics Letters, 73 (18). 2564-2566 doi:10.1063/1.122534
Shchekin, O. B., Deppe, D. G. (2002) The role of p-type doping and the density of states on the modulation response of quantum dot lasers. Applied Physics Letters, 80 (15). 2758-2760 doi:10.1063/1.1469212
 
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