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Rezek, B., Stuchlı́k, J., Fejfar, A., Kočka, J. (2002) Microcrystalline silicon thin films studied by atomic force microscopy with electrical current detection. Journal of Applied Physics, 92 (1). 587-593 doi:10.1063/1.1486032

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Reference TypeJournal (article/letter/editorial)
TitleMicrocrystalline silicon thin films studied by atomic force microscopy with electrical current detection
JournalJournal of Applied Physics
AuthorsRezek, B.Author
Stuchlı́k, J.Author
Fejfar, A.Author
Kočka, J.Author
Year2002 (July)Volume92
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.1486032Search in ResearchGate
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Mindat Ref. ID5115151Long-form Identifiermindat:1:5:5115151:3
GUID0
Full ReferenceRezek, B., Stuchlı́k, J., Fejfar, A., Kočka, J. (2002) Microcrystalline silicon thin films studied by atomic force microscopy with electrical current detection. Journal of Applied Physics, 92 (1). 587-593 doi:10.1063/1.1486032
Plain TextRezek, B., Stuchlı́k, J., Fejfar, A., Kočka, J. (2002) Microcrystalline silicon thin films studied by atomic force microscopy with electrical current detection. Journal of Applied Physics, 92 (1). 587-593 doi:10.1063/1.1486032
In(2002, July) Journal of Applied Physics Vol. 92 (1) AIP Publishing

See Also

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Rezek, B., Stuchlı́k, J., Fejfar, A., Kočka, J. (1999) Local characterization of electronic transport in microcrystalline silicon thin films with submicron resolution. Applied Physics Letters, 74 (10). 1475-1477 doi:10.1063/1.123585
Fejfar, A, Rezek, B, Knápek, P, Stuchlı́k, J, Kočka, J (2000) Local electronic transport in microcrystalline silicon observed by combined atomic force microscopy. Journal of Non-Crystalline Solids, 266. 309-314 doi:10.1016/s0022-3093(99)00841-8
Rezek, B., Mates, T., Stuchlı́k, J., Kočka, J., Stemmer, A. (2003) Charge storage in undoped hydrogenated amorphous silicon by ambient atomic force microscopy. Applied Physics Letters, 83 (9). 1764-1766 doi:10.1063/1.1606872
Rezek, B., Mates, T., Šı́pek, E., Stuchlı́k, J., Fejfar, A., Kočka, J. (2002) Influence of combined AFM/current measurement on local electronic properties of silicon thin films. Journal of Non-Crystalline Solids, 299. 360-364 doi:10.1016/s0022-3093(01)01012-2
Švrček, V., Pelant, I., Kočka, J., Fojtı́k, P., Rezek, B., Stuchlı́ková, H., Fejfar, A., Stuchlı́k, J., Poruba, A., Toušek, J. (2001) Transport anisotropy in microcrystalline silicon studied by measurement of ambipolar diffusion length. Journal of Applied Physics, 89 (3). 1800pp. doi:10.1063/1.1338996
Kočka, J., Stuchlı́ková, H., Stuchlı́k, J., Rezek, B., Mates, T., Švrček, V., Fojtı́k, P., Pelant, I., Fejfar, A. (2002) Model of transport in microcrystalline silicon. Journal of Non-Crystalline Solids, 299. 355-359 doi:10.1016/s0022-3093(02)00931-6
Vetushka, A., Fejfar, A., Ledinský, M., Rezek, B., Stuchlík, J., Kočka, J. (2010) Comment on “Current routes in hydrogenated microcrystalline silicon”. Physical Review B, 81 (23) doi:10.1103/physrevb.81.237301
Fejfar, A., Mates, T., Čertı́k, O., Rezek, B., Stuchlı́k, J., Pelant, I., Kočka, J. (2004) Model of electronic transport in microcrystalline silicon and its use for prediction of device performance. Journal of Non-Crystalline Solids, 338. 303-309 doi:10.1016/j.jnoncrysol.2004.02.063
Ledinský, Martin, Fejfar, Antonín, Vetushka, Aliaksei, Stuchlík, Jiří, Kočka, Jan (2012) Local photoconductivity of microcrystalline silicon thin films excited by 442nm HeCd laser measured by conductive atomic force microscopy. Journal of Non-Crystalline Solids, 358 (17) 2082-2085 doi:10.1016/j.jnoncrysol.2012.01.015
Kočka, J., Stuchlı́k, J., Stuchlı́ková, Ha, Švrček, V., Fojtı́k, P., Mates, T., Luterová, K., Fejfar, A. (2001) Amorphous/microcrystalline silicon superlattices—the chance to control isotropy and other transport properties. Applied Physics Letters, 79 (16). 2540-2542 doi:10.1063/1.1410364
Poruba, A., Fejfar, A., Remeš, Z., Špringer, J., Vaněček, M., Kočka, J., Meier, J., Torres, P., Shah, A. (2000) Optical absorption and light scattering in microcrystalline silicon thin films and solar cells. Journal of Applied Physics, 88 (1). 148-160 doi:10.1063/1.373635
 
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