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Dash, William C. (1958) Distorted Layers in Silicon Produced by Grinding and Polishing. Journal of Applied Physics, 29 (2). 228-229 doi:10.1063/1.1723079

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Reference TypeJournal (article/letter/editorial)
TitleDistorted Layers in Silicon Produced by Grinding and Polishing
JournalJournal of Applied Physics
AuthorsDash, William C.Author
Year1958 (February)Volume29
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.1723079
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Mindat Ref. ID4916072Long-form Identifiermindat:1:5:4916072:1
GUID0
Full ReferenceDash, William C. (1958) Distorted Layers in Silicon Produced by Grinding and Polishing. Journal of Applied Physics, 29 (2). 228-229 doi:10.1063/1.1723079
Plain TextDash, William C. (1958) Distorted Layers in Silicon Produced by Grinding and Polishing. Journal of Applied Physics, 29 (2). 228-229 doi:10.1063/1.1723079
In(1958, February) Journal of Applied Physics Vol. 29 (2) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Dash, William C. (1958) Silicon Crystals Free of Dislocations. Journal of Applied Physics, 29 (4). 736-737 doi:10.1063/1.1723264
Dash, William C. (1958) Evidence of Dislocation Jogs in Deformed Silicon. Journal of Applied Physics, 29 (4). 705-709 doi:10.1063/1.1723255
Keywell, F. (1958) Improved Diffusion Boundary Junctions in Silicon due to Scratch‐Free Polishing. Journal of Applied Physics, 29 (5). 871-872 doi:10.1063/1.1723311
Dash, William C. (1959) Growth of Silicon Crystals Free from Dislocations. Journal of Applied Physics, 30 (4). 459-474 doi:10.1063/1.1702390
Weiser, K. (1958) Decomposition Method for Producingp‐nJunctions in InP. Journal of Applied Physics, 29 (2). 229-230 doi:10.1063/1.1723080
Saccocio, Edward J., McKeown, William (1967) Saw and Polishing Damage in Silicon Crystal Wafers by X‐Ray Topography. Journal of Applied Physics, 38 (6). 2702-2704 doi:10.1063/1.1709985
Dash, William C. (1962) A Method for Measuring the Thickness of Epitaxial Silicon Films. Journal of Applied Physics, 33 (7). 2395-2396 doi:10.1063/1.1728973
Davis, W. D. (1958) Silicon Crystal Counters. Journal of Applied Physics, 29 (2). 231-232 doi:10.1063/1.1723082
Marwick, A. D., Oehrlein, G. S., Wittmer, M. (1991) High hydrogen concentrations produced by segregation intop+layers in silicon. Applied Physics Letters, 59 (2). 198-200 doi:10.1063/1.105964
Kurtz, A. D., Gravel, C. L. (1958) Diffusion of Gallium in Silicon. Journal of Applied Physics, 29 (10). 1456-1459 doi:10.1063/1.1722968
Cronemeyer, Donald C. (1958) Photoconductive Response of Single Crystal Germanium Layers Prepared by the Pyrolytic Decomposition of GeI2. Journal of Applied Physics, 29 (12). 1730-1735 doi:10.1063/1.1723034
 
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