Cronemeyer, Donald C. (1958) Photoconductive Response of Single Crystal Germanium Layers Prepared by the Pyrolytic Decomposition of GeI2. Journal of Applied Physics, 29 (12). 1730-1735 doi:10.1063/1.1723034

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Reference Type	Journal (article/letter/editorial)
Title	Photoconductive Response of Single Crystal Germanium Layers Prepared by the Pyrolytic Decomposition of GeI2
Journal	Journal of Applied Physics
Authors	Cronemeyer, Donald C.		Author
Year	1958 (December)	Volume	29
Issue	12
Publisher	AIP Publishing
DOI	doi:10.1063/1.1723034
	Generate Citation Formats
Mindat Ref. ID	4915934	Long-form Identifier	mindat:1:5:4915934:5
GUID	0
Full Reference	Cronemeyer, Donald C. (1958) Photoconductive Response of Single Crystal Germanium Layers Prepared by the Pyrolytic Decomposition of GeI2. Journal of Applied Physics, 29 (12). 1730-1735 doi:10.1063/1.1723034
Plain Text	Cronemeyer, Donald C. (1958) Photoconductive Response of Single Crystal Germanium Layers Prepared by the Pyrolytic Decomposition of GeI2. Journal of Applied Physics, 29 (12). 1730-1735 doi:10.1063/1.1723034
In	(1958, December) Journal of Applied Physics Vol. 29 (12) AIP Publishing

	*Wagner, R. S. (1958) Production of Dislocations in Germanium by Thermal Shock. Journal of Applied Physics, 29 (12). 1679-1682 doi:10.1063/1.1723023*
	*Ellis, Ray C. (1954) Etching of Single Crystal Germanium Spheres. Journal of Applied Physics, 25 (12). 1497-1499 doi:10.1063/1.1702371*
	*Grünwald, Theodor, Schreck, Matthias (2021) Photoconductive gain in single crystal diamond detectors. Journal of Applied Physics, 129 (12) 124502pp. doi:10.1063/5.0044649*
	*Roschen, John, Thornton, C. G. (1958) Solid‐State Dissolution of Germanium by Indium in Semiconductor Devices. Journal of Applied Physics, 29 (6). 923-928 doi:10.1063/1.1723332*
	*Dash, William C. (1958) Distorted Layers in Silicon Produced by Grinding and Polishing. Journal of Applied Physics, 29 (2). 228-229 doi:10.1063/1.1723079*
	*Wehner, G. K. (1958) Etching of Germanium Crystals by Ion Bombardment. Journal of Applied Physics, 29 (2). 217-221 doi:10.1063/1.1723070*
	*Ellis, Ray C. (1957) Etching of Single‐Crystal Germanium Spheres. Journal of Applied Physics, 28 (9). 1068 doi:10.1063/1.1722909*
	*Maringer, R. E. (1958) Etch Pitting on Single‐Crystal Indium Antimonide. Journal of Applied Physics, 29 (8). 1261 doi:10.1063/1.1723415*
	*Mowery, V. O. (1958) Theoretical Surface Conductivity Changes and Space Charge in Germanium and Silicon. Journal of Applied Physics, 29 (12). 1753-1757 doi:10.1063/1.1723040*
	Hou, Yun, Xu, Xiao-Hong, Wang, Hong, Wang, Min, Shang, Shu-Xia (2001) Bi3.25La0.75Ti3O12 thin films prepared on Si (100) by metalorganic decomposition method. Applied Physics Letters, 78 (12). 1733-1735 doi:10.1063/1.1355012
	*Harrick, N. J. (1958) Characteristics of Junctions in Germanium. Journal of Applied Physics, 29 (5). 764-770 doi:10.1063/1.1723281*

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Cronemeyer, Donald C. (1958) Photoconductive Response of Single Crystal Germanium Layers Prepared by the Pyrolytic Decomposition of GeI2. Journal of Applied Physics, 29 (12). 1730-1735 doi:10.1063/1.1723034

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