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Hartmann, J.M., Gonzatti, F., Fillot, F., Billon, T. (2008) Growth kinetics and boron doping of very high Ge content SiGe for source/drain engineering. Journal of Crystal Growth, 310 (1). 62-70 doi:10.1016/j.jcrysgro.2007.10.003

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Reference TypeJournal (article/letter/editorial)
TitleGrowth kinetics and boron doping of very high Ge content SiGe for source/drain engineering
JournalJournal of Crystal Growth
AuthorsHartmann, J.M.Author
Gonzatti, F.Author
Fillot, F.Author
Billon, T.Author
Year2008 (January)Volume310
Issue1
PublisherElsevier BV
DOIdoi:10.1016/j.jcrysgro.2007.10.003Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID2891002Long-form Identifiermindat:1:5:2891002:4
GUID0
Full ReferenceHartmann, J.M., Gonzatti, F., Fillot, F., Billon, T. (2008) Growth kinetics and boron doping of very high Ge content SiGe for source/drain engineering. Journal of Crystal Growth, 310 (1). 62-70 doi:10.1016/j.jcrysgro.2007.10.003
Plain TextHartmann, J.M., Gonzatti, F., Fillot, F., Billon, T. (2008) Growth kinetics and boron doping of very high Ge content SiGe for source/drain engineering. Journal of Crystal Growth, 310 (1). 62-70 doi:10.1016/j.jcrysgro.2007.10.003
In(2008, January) Journal of Crystal Growth Vol. 310 (1) Elsevier BV

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Hartmann, J.M., Bogumilowciz, Y., Abbadie, A., Fillot, F., Billon, T. (2008) Impact of the H2 bake temperature on the structural properties of tensily strained Si layers on SiGe. Journal of Crystal Growth, 310 (10). 2493-2502 doi:10.1016/j.jcrysgro.2008.01.033
Bogumilowicz, Y., Hartmann, J.M., Di Nardo, C., Holliger, P., Papon, A.-M., Rolland, G., Billon, T. (2006) High-temperature growth of very high germanium content SiGe virtual substrates. Journal of Crystal Growth, 290 (2). 523-531 doi:10.1016/j.jcrysgro.2006.02.019
Bogumilowicz, Y., Hartmann, J.M., Rolland, G., Billon, T. (2005) SiGe high-temperature growth kinetics in reduced pressure-chemical vapor deposition. Journal of Crystal Growth, 274 (1). 28-37 doi:10.1016/j.jcrysgro.2004.09.093
Hartmann, J.M. (2007) Low temperature growth kinetics of high Ge content SiGe in reduced pressure-chemical vapor deposition. Journal of Crystal Growth, 305 (1). 113-121 doi:10.1016/j.jcrysgro.2007.03.051
Bogumilowicz, Y., Hartmann, J.M., Laugier, F., Rolland, G., Billon, T., Cherkashin, N., Claverie, A. (2005) High germanium content SiGe virtual substrates grown at high temperatures. Journal of Crystal Growth, 283 (3). 346-355 doi:10.1016/j.jcrysgro.2005.06.036
Hartmann, J.M., Bogumilowicz, Y., Andrieu, F., Holliger, P., Rolland, G., Billon, T. (2005) Reduced pressure–chemical vapor deposition of high Ge content Si1−xGex and high C content Si1−yCy layers for advanced metal oxide semiconductor transistors. Journal of Crystal Growth, 277 (1). 114-123 doi:10.1016/j.jcrysgro.2005.01.076
Hartmann, J.M., Burdin, M., Rolland, G., Billon, T. (2006) Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces. Journal of Crystal Growth, 294 (2). 288-295 doi:10.1016/j.jcrysgro.2006.06.043
Hartmann, J.M., Papon, A.M., Barnes, J.P., Billon, T. (2009) Growth kinetics of SiGe/Si superlattices on bulk and silicon-on-insulator substrates for multi-channel devices. Journal of Crystal Growth, 311 (11). 3152-3157 doi:10.1016/j.jcrysgro.2009.03.027
Hartmann, J.M, Clavelier, L, Jahan, C, Holliger, P, Rolland, G, Billon, T, Defranoux, C (2004) Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains. Journal of Crystal Growth, 264 (1). 36-47 doi:10.1016/j.jcrysgro.2003.12.055
Hartmann, J.M., Py, M., Barnes, J.P., Prévitali, B., Batude, P., Billon, T. (2011) Low temperature boron and phosphorous doped SiGe for recessed and raised sources and drains. Journal of Crystal Growth, 327 (1). 68-77 doi:10.1016/j.jcrysgro.2011.05.009
Hartmann, J.M., Holliger, P., Laugier, F., Rolland, G., Suhm, A., Ernst, T., Billon, T., Vulliet, N. (2005) Growth of SiGe/Si superlattices on silicon-on-insulator substrates for multi-bridge channel field effect transistors. Journal of Crystal Growth, 283 (1). 57-67 doi:10.1016/j.jcrysgro.2005.05.068
 
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